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    2N1991 Search Results

    2N1991 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1991 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=PNP / Pkg=TO39 / Vceo=20 / Ic=0.3 / Hfe=15-60 / fT(Hz)=40M / Pwr(W)=0.6 Original PDF
    2N1991 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package Bipolar PNP Device - Pol=PNP / Pkg=TO39 / Vceo=20 / Ic=0.3 / Hfe=15-60 / fT(Hz)=40M / Pwr(W)=0.6 Original PDF
    2N1991 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N1991 Central Semiconductor METAL CAN Transistors Scan PDF
    2N1991 Central Semiconductor Metal Can Transistors Scan PDF
    2N1991 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N1991 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1991 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1991 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1991 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1991 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1991 Unknown Vintage Transistor Datasheets Scan PDF
    2N1991 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1991 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1991 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1991 Unknown Transistor Replacements Scan PDF
    2N1991 Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF
    2N1991 Semelab Transistor Selection Guide Scan PDF
    2N1991 Semico General Purpose Medium Speed Amplifiers Scan PDF
    2N1991 SGS-Ates Shortform Data Book 1977/78 Short Form PDF

    2N1991 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N1991 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 20V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N1991 O205AD) 17-Jul-02

    2N1991

    Abstract: No abstract text available
    Text: 2N1991 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 20V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N1991 O205AD) 1-Aug-02 2N1991

    2N1991

    Abstract: No abstract text available
    Text: 2N1991 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 20V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N1991 O205AD) 19-Jun-02 2N1991

    2N2090

    Abstract: 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Solitron PPC Product PPC Product Solitron Solitron PPC Product Sid St Dvcs Sid St Dvcs Sid St Dvcs Sid St Dvcs g~:~:g~ ~:~~: ~~: KSP1151 KSP1171 SOT7A07 SOT7A07 SOT7A07 SOT7607 SOT7607 SOn607


    Original     		PDF OT85306 OT85506 OT85606 KSP1151 KSP1171 OT7A07 2N2090 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original     		PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    2N2464

    Abstract: 2N2240 2N2655 TO206AA 2C6090 2N2538 2N2201 2N2203 2N1945 2N2453
    Text: STI Type: 2N1945 Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 30 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-205AD/TO-39: Industry Type: 2N1945 STI Type: 2N1958A Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 40


    Original     		PDF 2N1945 O-205AD/TO-39: 2N1958A 2N1959A 2N1973 2N2464 2N2240 2N2655 TO206AA 2C6090 2N2538 2N2201 2N2203 2N1945 2N2453

    2N2063A

    Abstract: 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99


    Original     		PDF BC141-S BFW24 BC637 BFS61 2N489S BFX34 2N1890 2N871 BC44S BC44S-18 2N2063A 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola

    bc352

    Abstract: KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index


    Original     		PDF MPS5142 MPS5143 2N998 2N3677 2N2411 2N1991 PN5143 2N5143 2N2802 2N2803 bc352 KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode

    2n5183

    Abstract: BC187 Small Signal Transistors TO-18 Case
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original     		PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A 2n5183 BC187 Small Signal Transistors TO-18 Case

    2N2483

    Abstract: 2N2539 2N2509 2N2475 2N2645 2N1991 2N2205 2N2220 2N2221A 2N2222A
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB µA) (V) (V) (V) (µ (V) MIN MIN MIN MAX hFE @ IC (mA) MIN @ VCE (V) MAX VCE (SAT) @ IC Cob fT NF (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MIN


    Original     		PDF 2N957 2N978 2N995 2N2861 2N2862 2N2894 2N2894A 2N2895 2N2483 2N2539 2N2509 2N2475 2N2645 2N1991 2N2205 2N2220 2N2221A 2N2222A

    N2219

    Abstract: 2N2453 2N2243 Hirel 2N1991 2N1937 2N2060 2N2102 2N2192 2N2192A
    Text: 37E D SEtlELAB l t d 6133167 0000013 0 ISMLB 7=27- 0 / T-Jl-Ol Type No. Reliability Polarity Option Package V^e o ic cont hFE@ VCE/*C *T Pd 2N1937 2N1991 2N2060 2N2102 .2N2192 HI-REL SCREEN HI-REL HI-REL HI-REL NPN PNP PNP NPN NPN T063 T039 T077 T039 T039


    OCR Scan     		PDF 133ia? 00Q13 2N1937 2N1991 2N2060 5/10m 2N2102 35min 10/10m 2N2192 N2219 2N2453 2N2243 Hirel 2N2192A

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


    OCR Scan     		PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2N859

    Abstract: 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917
    Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385


    OCR Scan     		PDF 2n3117 to-18 2n4383 2n4384 2n4385 2n4386 CBR30 0000S23 2N859 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    cs9011j

    Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
    Text: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •


    OCR Scan     		PDF 2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 2NI975 O-237 cs9011j MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C

    2N3638

    Abstract: MPS8093 2N3072 MPS6534 motorola 2N3133 MOTOROLA 2n3638a 2N5221 2n3133 2n3136 2n2907a motorola
    Text: MOTOROLA SC -CDIODES/OPTO} ' 34 ]>F|b3t,75SS 3037^70 H 6367255 M O T O R O L A SC (DIODES/OPTO f 3^C ~ 37978 T^3 7 -/7 SILICO N SM ÂLL-SIG NAL TR A N SISTO R DICE (continued) 2C2907A DIE NO. — pnp LINE SOURCE — DMB151 C« This die provides performance equal to or better than that of the following


    OCR Scan     		PDF DMB151 2C2907A 2N721 2N722 2N978 2N1131 2N1132 2N1991 2N2694 2N2695 2N3638 MPS8093 2N3072 MPS6534 motorola 2N3133 MOTOROLA 2n3638a 2N5221 2n3133 2n3136 2n2907a motorola

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    2N1256 S P

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 1 9 8 9 9 6 3 C E N T R A L SfcMlLUNÜUCTUK 6 1 C “0 0 2 1 9 . T~ 5 l ~ 0 / NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB 2N3117 2N4383 2N4384 2N4385 2N4386 60 40 40 40 40 V V V hpE min


    OCR Scan     		PDF 2N3117 2N4383 2N4384 2N4385 2N4386 CBR10 CBR25Ser/es CBR12 CBR30 C1000SE3 2N1256 S P

    2n744

    Abstract: LM3661TL-1.40
    Text: Small signal Transistors TO-18 Case T Y P E NO. DESC RIPTIO N 00 V (V) (HA) MIN MIN MIN MAX *IC ES " IC E V @ 1C @ V C E V C E(SAT ) @ «C Cob hFE B V C B O B V C EO B V e b O C B O * V C B O <raA) (V) MIN M AX (V) (V) (mA) (PF) M AX M AX ton toff (ns) IT


    OCR Scan     		PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A 2n744 LM3661TL-1.40