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    2N136 Search Results

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    2N136 Price and Stock

    Amphenol Communications Solutions 70232-N136

    METRAL SIGNAL HEADER-1 MOD 4ROW
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    DigiKey 70232-N136 Tube
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    ams OSRAM Group LB-Q193-L2N1-36-1-10-R18

    LED BLUE SMD
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    DigiKey LB-Q193-L2N1-36-1-10-R18 Reel 12,000
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    SICK AG WTB2S-2N1360

    Photoelectric Sensor, 66Mm, Npn, 10-30V Rohs Compliant: Yes |Sick WTB2S-2N1360
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    Newark WTB2S-2N1360 Bulk 1
    • 1 $243.43
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    SICK AG WTB2S-2N1360 (ALTERNATE: 1064609)

    Proximity Sensor, Photoelectric, Rectangular,5 mm-60 mm, Red Light,640 nm, NPN | SICK WTB2S-2N1360
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    RS WTB2S-2N1360 (ALTERNATE: 1064609) Bulk 1
    • 1 $229.85
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    SSI 2N1360

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    Bristol Electronics 2N1360 21 1
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    Quest Components 2N1360 16
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    2N136 Datasheets (91)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N136 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N136 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N136 Unknown GE Transistor Specifications Scan PDF
    2N136 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N136 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N136 Unknown Vintage Transistor Datasheets Scan PDF
    2N136 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N136 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1360 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1360 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1360 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1360 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1360 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1360 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1360 Unknown Vintage Transistor Datasheets Scan PDF
    2N1360 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1360 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1360 Semitron Germanium Power Transistors Scan PDF
    2N1360 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N1361 Motorola Motorola Semiconductor Datasheet Library Scan PDF

    2N136 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MP2145

    Abstract: AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945
    Text: POWER GERMANIUM PNP Item Number Part Number I C •5 · 10 >= MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A ~1~~~ 20 MP2146 2N2146 2N2146A 2N1761 2N3157 2N2660 2N2663 2N2666 · ~~~~~2 15 · 25 30 2N1758 2N1362 2N1363 2N1762 ADl63


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    MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1362 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)75â V(BR)CBO (V)100 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)20m @V(CBO) (V) (Test Condition)38 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0


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    2N1362 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1367 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)18 I(C) Max. (A)25m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.


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    2N1367 PDF

    LS 74151

    Abstract: 2N555 MT27 220 hfk 2N176 Germanium Power Devices MT-27 2N2553 2N297A 2N155
    Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V yc.o CA2D2 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 2N285A 2N285B 2N297A 2N375 2N392 2N399 2N538 2N538A 2N539 2N539A 2N540 2N540A 2N554 2N555 2N618 2N1359 2N1360 2N1362 2N1363


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    MT-36 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 LS 74151 2N555 MT27 220 hfk Germanium Power Devices MT-27 2N2553 2N297A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1365 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)100â V(BR)CBO (V)120 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)3.0m @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0


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    2N1365 PDF

    2N2869

    Abstract: 2N1168 2N375 2N380 2N2870 2N268A 2n1363 2N1359 2N2423 2N1365
    Text: Sermanium power transistors 46 T 0 3 / See Pg. 147 for o u t lin ^ d r jjjig PNP ALLOY TRANSISTORS 1.0 Amp BREAKDOWN VOLTAGES TYPE NUMBER 2N296 2N375 2N392 2N618 2N1168 2N1359 2N1360 2N1362 2N1363 2N1364 2N1365 2N2869/301 2N2870/301A @ V CB v,CE V EB — 60


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    2N296 2N375 2N392 2N618 2N1168 2N1359 2N1360 2N1362 2N1363 2N1364 2N2869 2N380 2N2870 2N268A 2N2423 2N1365 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1361 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.40 h(FE) Max. Current gain.100


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    2N1361 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1366 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)18 I(C) Max. (A)25m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.


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    2N1366 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1361A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.40 h(FE) Max. Current gain.100


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    2N1361A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N136 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20ã V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)6.0 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    2N136 PDF

    2N1384

    Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
    Text: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP


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    2N974 2N1031A 2N1117 2N975 2N1032 2N1118 2N976 2N1034 2N1119 2N980 2N1384 2N993 2N1516 2N1151 2N1378 2N1036 2N1150 2N1037 2N1046 PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2N25

    Abstract: ge 142 2SB450 GET113 2SA244 AC139/AC142 2SB450A ASY82 SFT121 SFT142
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N25 ge 142 2SB450 GET113 2SA244 AC139/AC142 2SB450A ASY82 SFT121 SFT142 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    2n555

    Abstract: No abstract text available
    Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V VCE, V yc.o y VCE, V Min. CURRENT C A IN Hfe Yce @ Ic Max. V A SA TURA TION VOL TA GES y Cf * y SF(|) /c @ y y A A 9j-c aC /W 3 AMP GERMANIUM PNP CA2D2 2N155 2N176 2N235A 2N236A MT-36 TO-3 TO-3


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    2N155 2N176 2N235A 2N236A MT-36 2N236B 2N242 2N255 2N256 2N268 2n555 PDF

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 PDF

    OC139

    Abstract: Low-Power Germanium NPN 2N1694 2N557 2N558 2N147 2N212 2N576 2N634 TR07
    Text: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer V BR CBO Ie Max (A) hFE (V) fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CEO (V) PD Max (W) Derate at (WrC) Toper Max eC) 2.0m 100 S TO-5 2.5m 100 J 100 J 100 S 100 S 100 J 100 J TO-l TO-5 TO-22var TO-5


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    2N445 NKT773 2N292A 2N446 2N558 2N165 2N1288 2N447 2N172 2N148 OC139 Low-Power Germanium NPN 2N1694 2N557 2N147 2N212 2N576 2N634 TR07 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    SFT337

    Abstract: 2SB328 2N2342 2SB328 npn transistor 2SB66 2SB136 2SA65 ASY52 2SB153 2SB154
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 SFT337 2SB328 2N2342 2SB328 npn transistor 2SB66 2SB136 2SA65 ASY52 2SB153 2SB154 PDF

    2sb370

    Abstract: GET102 2sa90 2N2225 2SB450 2SB450A ASY82 SFT121 SFT142 usaf521es071
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 2sb370 GET102 2sa90 2N2225 2SB450 2SB450A ASY82 SFT121 SFT142 usaf521es071 PDF

    ge 142

    Abstract: 2sc180 2G140 2SA244 ASY82 2SB450 2SB450A SFT121 SFT142 SFT151
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 ge 142 2sc180 2G140 2SA244 ASY82 2SB450 2SB450A SFT121 SFT142 SFT151 PDF