Untitled
Abstract: No abstract text available
Text: 2SD2337 Silicon NPN Triple Diffused HITACHI Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline T O -2 2 0 F M A In 1 2 1. B a se 2. C o lle c to r 3. E m itte r 2SD2337 Absolute Maximum Ratings Ta = 25 °C
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2SD2337
2SB1530
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SD2337 Silicon NPN Triple Diffused HITACHI Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline T O -2 2 0 F M A 1 2 1. B a s e 2. C o lle c to r 3. E m itte r 2SD2337 Absolute Maximum Ratings Ta = 25 °C
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2SD2337
2SB1530
2SD2337
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2sb1538
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat): < 0.15 V
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2002/95/EC)
2SD2358
2SB1538
2sb1538
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2sb15
Abstract: 2SB1538 2SD2358
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat): < 0.15 V
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2002/95/EC)
2SD2358
2SB1538
2sb15
2SB1538
2SD2358
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2SB1537
Abstract: 2SD2357 2sb15
Text: Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 M Di ain sc te on na tin nc ue e/ d Unit: mm 0.4±0.08 0.5±0.08 1.5±0.1 2.5±0.1 +0.25 0.4max. 4.0–0.20 +0.1 45° 1.0–0.2 ● Low collector to emitter saturation voltage VCE sat .
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2SB1537
2SD2357
2SB1537
2SD2357
2sb15
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2SB1531
Abstract: 2SD2340 2sb15
Text: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm M Di ain sc te on na tin nc ue e/ d 15.0±0.5 4.0±0.1 4.0±0.1 2.0±0.1 15.0±0.2 20.0±0.3 19.0±0.3 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output
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2SB1531
2SD2340
2SB1531
2SD2340
2sb15
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2sb1530
Abstract: No abstract text available
Text: HITACHI 2SB1530-Silicon PNP Triple Diffused Low Frequency Power Amplifier Color TV Vertical Deflection Output Complementary Pair with 2SD2337 Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage VCBO -200 V
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2SB1530--------------Silicon
2SD2337
O-220
2SCI530
2sb1530
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2SB1530
Abstract: 2SD2337 Hitachi DSA00395
Text: 2SD2337 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SD2337 Absolute Maximum Ratings Ta = 25°C Item
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2SD2337
2SB1530
O-220FM
2SB1530
2SD2337
Hitachi DSA00395
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2SB1537
Abstract: 2SD2357
Text: Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.
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2SB1537
2SD2357
2SB1537
2SD2357
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2SB1531
Abstract: 2SD2340 1305s
Text: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000
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2SB1531
2SD2340
2SB1531
2SD2340
1305s
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smd transistor marking 1N
Abstract: 2SB1539 marking 1N 2sb15
Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1539 Features Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine
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2SB1539
smd transistor marking 1N
2SB1539
marking 1N
2sb15
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SD2337 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SD2337 Absolute Maximum Ratings Ta = 25°C Item
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2SD2337
2SB1530
O-220FM
D-85622
Hitachi DSA00279
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat): < 0.15 V
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2002/95/EC)
2SD2358
2SB1538
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PC120
Abstract: 2SB1530 2SD2337 2SB153
Text: 2SD2337 Silicon NPN Triple Diffused Low Frequency High Voltage Power Amplifier TV Vertical Deflection Output Complementary Pair with 2SB1530 Absolute Maximum Ratings Ta = 25°C Item TO-220 FM Symbol Rating Unit ————————————————————–
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2SD2337
2SB1530
O-220
PC120
2SB1530
2SD2337
2SB153
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Untitled
Abstract: No abstract text available
Text: 2SB1530 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337 Outline TO-220FM 1. Base 2. Collector 3. Em itter 2SB1530 Absolute Maximum Ratings Ta = 25 °C Item
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2SB1530
2SD2337
O-220FM
2SB1530
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PDF
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2SB1539
Abstract: 2SD2359
Text: Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2359 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.
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2SB1539
2SD2359
2SB1539
2SD2359
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at maga
Abstract: 2SB1537 2SD2357
Text: Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.
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2SD2357
2SB1537
200MHz
at maga
2SB1537
2SD2357
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2SB1537
Abstract: 2SD2357
Text: Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.
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2SD2357
2SB1537
2SB1537
2SD2357
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2SB1538
Abstract: 2SD2358
Text: Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat): < 0.15 V • Allowing supply with the radial taping
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2SD2358
2SB1538
2SB1538
2SD2358
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2SB1530
Abstract: 2SD2337 DSA003645
Text: 2SD2337 Silicon NPN Triple Diffused ADE-208-929 Z 1st. Edition Sep. 2000 Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SD2337 Absolute Maximum Ratings (Ta = 25°C)
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2SD2337
ADE-208-929
2SB1530
O-220FM
2SB1530
2SD2337
DSA003645
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PDF
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2sb15
Abstract: No abstract text available
Text: 2SB1530 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337 Outline TO-220FM 1. Base 2. Collector 3. Em itter 2SB1530 Absolute Maximum Ratings Ta = 25 °C Item
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2SB1530
2SD2337
O-220FM
D-85622
2sb15
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SB1530 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337 Outline TO-220FM jg | i 1 1 1 2 :3 1. Base 2. Collector 3. Em itter 2SB1530 Absolute Maximum Ratings T a =
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2SB1530
2SD2337
O-220FM
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PDF
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2SB1535F5
Abstract: 2SB1535
Text: h7 > V £ /Transistors 2SB1535F5 Epitaxial Planar PNP Silicon Transistor féüá£S27*0,fÍ/l-o w Freq. Power Amp. • il-JB ^äiS/D im ensions Unit : mm • &J& 1) V ce (sat) 6. 5 + 0. 2 VcE (sat)S—0.6V 5 l + 3- 1 - 00 .- 21 r , i. (lc /lB = -0 .5 5 A /-0 .0 3 A )
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2SB1535FS
sc-63
-aoi-ao2-oo6-ai-02
2SB1535F5
2SB1535
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PDF
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2SB1531
Abstract: No abstract text available
Text: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 10.5±0.5 2.0±0.1 15.0±0.2 20.0±0.3 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000
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2SB1531
2SD2340
2SB1531
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