16MX36 Search Results

Contextual Info: »fl Y U ND ft I - • HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM 5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 ¡iF and 0.01 (tF

KMM53616000CK

Abstract: KMM53616000CKG
Contextual Info: DRAM MODULE KMM53616000CK/CKG 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53616000CK/CKG DRAM MODULE KMM53616000CK/CKG

ds812

Contextual Info: 16M x 36 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 361606-S54s20TD 72 Pin 16Mx36 FPM SIMM Unbuffered, 4k Refresh, 5V General Description Pin Assignment The module is a 16Mx36 bit, 20 chip, 5V, 72 Pin SIMM module consisting of (12) 16Mx4 (TSOP), (1) Voltage Regulator and (7) Bus Switches. The module is

Contextual Info: DRAM MODULE M53631601BE0/BJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53631601BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

16Mx4bit

Abstract: KMM53616004BK KMM53616004BKG
Contextual Info: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616004B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs

pd16m

Contextual Info: WPD16M36-XMSC WHITE /MICROELECTRONICS a 16Mx36 DRAM SIMM w ith Fast Page Mode FPM FEATURES GENERAL DESCRIPTION T he W P D 1 6 M 3 6 -X M S C is a 1 6 M b it x 36 D yn a m ic RAM (DRAM) high density mem ory module. The W PD16M 36-XM SC consists of 8 CM OS 16M x 4 bit 3.3V DRAM com ponents in

4bit Dynamic RAM

Abstract: simm 72pin HMD16M32M8GH
Contextual Info: HANBit HMD16M32M8GH 64Mbyte 16Mx36 FP Mode 4K Ref. 72pin-SIMM Design Part No. HMD16M32M8GH GENERAL DESCRIPTION The HMD16M32M8GH is a 16M x 32bit dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 4bit DRAMs in 32-pin SOJ or TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF

Q022B

Contextual Info: DRAM MODULE KMM53616000AKG KMM53616000AK Fast Page Mode 16Mx36 DRAM SIMM, 4K Refresh, using 64M DRAM with 400 mil G EN ER AL DESCR IPTIO N FEATURES The Samsung KMM53616000AK is a 16M bit x 36 Dynamic RAM high density memory module. The • Part Identification

DS555

Abstract: 72 simm function 16m x 36 60ns simm
Contextual Info: 16M x 36 Bit ECC 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 361656-S54m16TL 72 Pin 16Mx36 FPM SIMM Unbuffered, 4k Refresh, 5V Pin Assignment General Description The 361656-S54m16TL is a 16Mx36 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (9) 16Mx4 (TSOP2) DRAM. The module is unbuffered and

km44c16104ak

Abstract: 44c16104
Contextual Info: DRAM MODULE KMM53616004AK/AKG KMM53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs

KM41C16000BK

Abstract: KMM53616000AK
Contextual Info: DRAM MODULE KMM53616000A KG KMM53616000AK Fast Page Mode 16Mx36 DRAM SIMM, 4K Refresh, using 64M DRAM with 400 mil G ENER AL D ESCRIPTIO N FEATURES T h e S a m s u n g K M M 5 3 6 1 6 0 0 0 A K is a 16M b it x 36 • P a ri Id e n tificatio n D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . The

Contextual Info: DRAM MODULE KMM53616000BK/BKG KMM53616000BK/BKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616000B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000B consists of eight CMOS 16Mx4bits DRAMs

Contextual Info: 77 M/HITE /MICROELECTRONICS WPD16M36-XMSC 16Mx36 DRAM SIMM with Fast Page Mode FPM FEATURES GENERAL DESCRIPTION Perform ance range: tRAC tCAC tRC tPC W PD16M 36-60M SC 60ns 15ns 110ns 40ns W PD16M 36-70M SC 70ns 20ns 130ns 45ns T he W P D 1 6 M 3 6 -X M S C is a 16M bit x 36 D yn a m ic RAM

STATIC RAM 256KX16

Abstract: "Video RAM" KM4216C528 Dynamic RAM icc3 KM4216C258 256KX16 512Kx1
Contextual Info: 16Mx36, 50 - 70ns, TSTACK 30A165-33 B M-Densus High Density Memory Device 8 Megabit CMOS VIDEO RAM DPO512X16MGY5-CM PRELIMINARY DESCRIPTION: The DPO512X16MGY5-CM is a 512Kx16 bit Dual Port Dynamic RAM module that utilize the new and innovative space saving SOP stacking technology.

16m x 36 60ns simm

Contextual Info: 16M x 36 Bit ECC 5V EDO SIMM Extended Data Out EDO DRAM SIMM 361656ES54m16TL 72 Pin 16Mx36 ECC EDO SIMM Unbuffered, 4k Refresh, 5V Pin Assignment General Description The 361656ES54m16TL is a 16Mx36 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (9) 16Mx4

Contextual Info: DRAM MODULE M53631601CE0/CJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53631601CE0/CJ0-C DRAM MODULE M53631601CE0/CJ0-C

KMM53616004CK

Abstract: KMM53616004CKG
Contextual Info: DRAM MODULE KMM53616004CK/CKG 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53616004CK/CKG DRAM MODULE KMM53616004CK/CKG

KMM53616000BK

Abstract: KMM53616000BKG
Contextual Info: DRAM MODULE KMM53616000BK/BKG KMM53616000BK/BKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616000B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000B consists of eight CMOS 16Mx4bits DRAMs

Contextual Info: DRAM MODULE M53611601BE0/BJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53611601BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

simm 72pin

Abstract: HMD16M36M12EG
Contextual Info: HANBit HMD16M36M12EG 64Mbyte 16Mx36 EDO/with Parity Mode 4K Ref. 72pin-SIMM Design Part No. HMD16M36M12EG GENERAL DESCRIPTION The HMD16M36M12EG is a 16M x 36bit dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 4bit DRAMs in 32-pin SOJ or TSOP packages and four CMOS 16Mx1bit DRAMs in SOJ or TSOP packages

sft 367

Contextual Info: MITSUBISHI LSIs DRAM MODULE FAST PAGE MODE DYNAMIC RAM 16MX36 Max. Access time (ns) Type name MH16M36AJ-6 ★ MH16M36NAJ-6 ★ MH16M36AJ-7 ★ MH16M36NAJ-7 ★ 576 MBIT Load memory Outward dimensions Data sheet W X H X D (mm) page 60 M5M416100AJ x 36 120.51 X 4 6 .3 x 8 .6

Contextual Info: DRAM MODULE KMM53616000BK/BKG KMM53616000BK/BKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16M x1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616000B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000B consists of eight CMOS 16Mx4bits DRAMs

Contextual Info: WHITE /M ICRO ELECTRONICS WPD16M36-XMSC 16Mx36 DRAM SIM M FEATURES GENERAL DESCRIPTION • The W P D 16M 36-X M S C is a 16Mbit x 36 Dynamic RAM high density memory module. The W P D 16M 36-X M S C consists of 36 CM O S 16M x 1 bit DRAMs in 24-pin TS O P packages. The

DHR 44

Contextual Info: WPD16M36-XMSC WHITE /M ICRO ELECTRO NICS 16Mx36 DRAM SIM M GENERAL DESCRIPTION FEATURES • ^RAC ^CAC ^RC W PD16M 36-60M SC 60ns 15ns 110ns W PD16M 36-70M SC 70ns 20ns 130ns W PD16M 36-80M SC 80ns 20ns 150ns • Fast Page Mode operation • C AS-before-R AS refresh capability