HYM536410AM70
Abstract: KMM5364103AK-6 KMM53632000AKA-60 KMM53632000AK-6U KMM5364103AK-70 KMM53632000AK6 KMM5362003C-60 4MX36 KMM53616000AK 16MX36
Text: Page 1 12/09/97 AP450GX MP Server System 12/9/97 The following tables list SIMM/DIMM devices known to be compatible with the specified Intel platforms. In general, SIMM devices, which are faster than those specified for a given platform, will work although no extra performance will be realized. The memory devices
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AP450GX
HYM536410AM70
KMM5364103AK-6
KMM53632000AKA-60
KMM53632000AK-6U
KMM5364103AK-70
KMM53632000AK6
KMM5362003C-60
4MX36
KMM53616000AK
16MX36
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Q022B
Abstract: No abstract text available
Text: DRAM MODULE KMM53616000AKG KMM53616000AK Fast Page Mode 16Mx36 DRAM SIMM, 4K Refresh, using 64M DRAM with 400 mil G EN ER AL DESCR IPTIO N FEATURES The Samsung KMM53616000AK is a 16M bit x 36 Dynamic RAM high density memory module. The • Part Identification
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KMM53616000AKG
KMM53616000AK
16Mx36
16Mx4bit
32-pin
16Mx1bit
24-pin
72-pin
Q022B
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KM41C16000BK
Abstract: KMM53616000AK
Text: DRAM MODULE KMM53616000A KG KMM53616000AK Fast Page Mode 16Mx36 DRAM SIMM, 4K Refresh, using 64M DRAM with 400 mil G ENER AL D ESCRIPTIO N FEATURES T h e S a m s u n g K M M 5 3 6 1 6 0 0 0 A K is a 16M b it x 36 • P a ri Id e n tificatio n D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . The
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KMM53616000A
KMM53616000AK
16Mx36
KMM53616000AKG
16Mx4
16Mx1
16100AK
16000BK
KM41C16000BK
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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KMM366F213BK6
Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7
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2Mx36
4Mx32
8Mx32
KMM374F4l
KMM374F410BK-6
8Mx64
MM366F883AK-5_
KMM366F883AK-6
KMM366F803AK-5
KMM374F
KMM366F213BK6
KMM364E124BJ6
KMM366F213BK-6
KMM374F410BK6
83AK
KMM366F410BK6
KMM374F400BK6
KMM366F400BK6
124BT-L7
KMM364C12
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1MX16
Abstract: KMM5324104BK KMM5321200B
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG
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1Mx32
KMM5321200AW/AWG
KMM5321200BW/BWG
KMM5321204AW/AWG
KMM5321204BW/BWG
1Mx36
M15361203A
1Mx16,
1Mx16
16Mx4,
1MX16
KMM5324104BK
KMM5321200B
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KMM364C12
Abstract: KMM53616000AK KMM5322100BK 2MX32 1MX16
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Intro d u ctio n . DRAM Module- 13 13 DRAM for
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53216000AKG KMM53216000AKG Fast Page Mode 16Mx32 DRAM SIMM, 4K Refresh using 64M DRAM with 400mil G EN ER AL DESCRIPTIO N FEATURES The Samsung KMM53216000AKG is a 16M bit x 32 • Part Identification Dynamic RAM high density memory module. The
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KMM53216000AKG
KMM53216000AKG
16Mx32
400mil
16Mx4bit
32-pin
72-pin
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