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    13517 Search Results

    13517 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10135177-04111LF Amphenol Communications Solutions Minitek® 1.5mm Wire to Board Receptacle Vertical Surface Mount Type, Tin plating, 4 positions Visit Amphenol Communications Solutions
    10135177-07111LF Amphenol Communications Solutions Minitek® 1.5mm Wire to Board Receptacle Vertical Surface Mount Type, Tin plating, 7 positions Visit Amphenol Communications Solutions
    10135177-14111LF Amphenol Communications Solutions Minitek® 1.5mm Wire to Board Receptacle Vertical Surface Mount Type, Tin plating, 14 positions Visit Amphenol Communications Solutions
    10135175-08110LF Amphenol Communications Solutions Minitek® 1.5mm Wire to Board Plug HSG, 8 positions Visit Amphenol Communications Solutions
    10135177-02111LF Amphenol Communications Solutions Minitek® 1.5mm Wire to Board Receptacle Vertical Surface Mount Type, Tin plating, 2 positions Visit Amphenol Communications Solutions
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    13517 Price and Stock

    Seiko Epson Corporation S1D13517F00A100

    IC VIDEO GRAPHIC CNTL 128QFP15
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    DigiKey S1D13517F00A100 Tray 16,655 1
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    Mouser Electronics S1D13517F00A100 2,470
    • 1 $12.86
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    Bristol Electronics S1D13517F00A100 5
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    ComSIT USA S1D13517F00A100 712
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    New Advantage Corporation S1D13517F00A100 180 1
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    Vyrian S1D13517F00A100 2,849
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    Amphenol Communications Solutions 10135177-04111LF

    CONN RCPT 4POS 0.059 TIN SMD
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    DigiKey 10135177-04111LF Cut Tape 1,248 1
    • 1 $1.08
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    10135177-04111LF Digi-Reel 1,248 1
    • 1 $1.08
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    10135177-04111LF Reel 1,000 500
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    Newark 10135177-04111LF Bulk 22,000 500
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    Wurth Elektronik 870135174006

    CAP ALUM POLY 1000UF 20% 6.3V TH
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    DigiKey 870135174006 Cut Tape 779 1
    • 1 $1.03
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    Newark 870135174006 Bulk 687 1
    • 1 $1.26
    • 10 $1.21
    • 100 $0.98
    • 1000 $0.796
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    Wurth Elektronik 870135174001

    CAP ALUM POLY 390UF 20% 6.3V TH
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    DigiKey 870135174001 Cut Tape 750 1
    • 1 $0.8
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    • 1000 $0.52832
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    Wurth Elektronik 870135175009

    CAP ALUM POLY 2000UF 20% 6.3V TH
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    DigiKey 870135175009 Cut Tape 295 1
    • 1 $2.1
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    13517 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    13517 Brady Worldwide B85, CART, RBN, CONT, MGN, 8 Original PDF
    13517.1 CONTA-CLIP PCB TERMINAL Original PDF
    13517.4 CONTA-CLIP PCB TERMINAL Original PDF
    1351760000 Weidmüller Terminal Blocks - Headers, Plugs and Sockets, Connectors, Interconnects, TERM BLOCK HDR 5POS R/A 5.08MM Original PDF

    13517 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1352702

    Abstract: UL1953 UL508A
    Text: UL Listed Power Distribution Blocks Specifications: Shown: 1351708 UL Listed and 1353702 with accessory cover (UL Recognized) • Safety hinged cover available (CH 1351), 1 cover per pole - p. 58 • UL Listed, Investigated to UL 1953, File QPQS.E309401


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    E309401 UL508A, 1352702 UL1953 UL508A PDF

    13517

    Abstract: ul508a
    Text: UL Listed Power Distribution Blocks Specifications: Shown: 1351708 UL Listed and 1353702 with accessory cover (UL Recognized) • Safety hinged cover available (CH 1351), 1 cover per pole - p. 58 • UL Listed, Investigated to UL 1953, File QPQS.E309401


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    E309401 UL508A, 13517 ul508a PDF

    Untitled

    Abstract: No abstract text available
    Text: 12 11 10 8 SYMBOL DEFINITION MISSING SYMBOLS A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. H TOTAL NO OF INSPECTIONS REQUIRED LAST NO. USED (30o8ò) 13517349 - CONNECTOR


    OCR Scan
    13DE04 14DE04 06DE04 PDF

    RA07M1317MS

    Abstract: 135175MHz ra07m1317msa
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


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    RA07M1317MSA 135-175MHz RA07M1317MSA 175-MHz RA07M1317MS 135175MHz PDF

    DFFC 0.5-1.0

    Abstract: 1476 1567060000 B 1359 v 12719 1350710 138731-000 1283310
    Text: Unimate Range - SLA/BLA The pin headers and socket blocks of the SLA/BLA product family will only mate as a pair, i.e. only pin headers and socket blocks of the same number of poles will connect together. This is not the only unique feature of this Weidmueller classic: We make this


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    PDF

    RA30H1317M

    Abstract: RA30H1317M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


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    RA30H1317M 135-175MHz RA30H1317M 30-watt 175-MHz 24Jan RA30H1317M-101 PDF

    RD12MVP1

    Abstract: RD12MVS1 2040D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V


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    AN-VHF-034-B RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/17meter) RD12MVS1 2040D PDF

    RA30H1317M1

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


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    RA30H1317M1 135-175MHz RA30H1317M1 30-watt 175-MHz PDF

    RA08H1317

    Abstract: RA08H1317M RA08H1317M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317 RA08H1317M 08H1317M RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module


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    RA08H1317M 08H1317 135-175MHz RA08H1317M 175-MHz RA08H1317 RA08H1317M-101 PDF

    RD07MUS2B

    Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


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    RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773 PDF

    RD07MUS2B

    Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V


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    AN-VHF-047-A RD07MUS2B RD07MUS2B: 083YH-G" RD07MUS2B 175MHz 250mA 2302S 2306C RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E PDF

    RA08N1317M

    Abstract: RA08N1317M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317M 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz


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    RA08N1317M 135-175MHz RA08N1317M 175-MHz RA08N1317M-01 PDF

    RA07M1317M

    Abstract: RA07M1317M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


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    RA07M1317M 135-175MHz RA07M1317M 175-MHz RA07M1317M-01 PDF

    8C447

    Abstract: No abstract text available
    Text: PRODUCT INFORMATION 1300nm 8C447 1550nm PIN/Preamp Datacom, General Purpose, Analog Applications This device consists of a PIN photodiode and a transimpedance amplifier assembled in a TO-46 package. It is designed for short-distance FDDI and ATM up to 155 Mbps. The preamplifier’s linearity and absence of


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    1300nm 8C447 1550nm 8C447 PDF

    RA60H1317M-101

    Abstract: RA60H1317M RA60H1317M1
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


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    RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz RA60H1317M-101 RA60H1317M1 PDF

    PPE PA GF30

    Abstract: PA66 GF 25 relay PA66 - GF 25 relay AMP PBT gf33 connector AMP PBT gf30 connector PBT PET GF30 DELPHI Connectors weather-pack pa6 gb gf30 obd II connector AMP PBT GF30 4 pin
    Text: Global Connection Systems Catalog Table of Contents World Headquarters and Customer Center Mail Code 483.400.306 5725 Delphi Drive Troy, Michigan 48098-2815 U.S.A. Tel: [1] 248.813.2334 Fax: [1] 248.813.2333 Asia Pacific Regional Headquarters No. 60, Yuan Guo Road


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    DP-06-E-165 1006/GrxROB/10m PPE PA GF30 PA66 GF 25 relay PA66 - GF 25 relay AMP PBT gf33 connector AMP PBT gf30 connector PBT PET GF30 DELPHI Connectors weather-pack pa6 gb gf30 obd II connector AMP PBT GF30 4 pin PDF

    MAX232 8pin configuration

    Abstract: max232 interface pic pc RS232 MAX232 RX1M-151-5 DB9M NULL DATASHEET MAX232 TX1M-151-5 FM RADIO transmitter circuit diagram vhf fm transmitter
    Text: W E N Radiometrix Hartcran House, 231 Kenton Lane, Harrow, HA3 8RP, England Issue 3, 19 October2007 Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233 TX1M/RX1M VHF Narrow Band Band FM multi channel radio Transmitter & Receiver UK Version: RX1M-173-5/TX1M-173-5 (10mW)


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    October2007 RX1M-173-5/TX1M-173-5 TX1M-151-5 RX1M-151-5 MAX232 8pin configuration max232 interface pic pc RS232 MAX232 RX1M-151-5 DB9M NULL DATASHEET MAX232 TX1M-151-5 FM RADIO transmitter circuit diagram vhf fm transmitter PDF

    RD12MVP1

    Abstract: RD12MVS1 mitsubishi 5218 5253 1007
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034-A Date : 10th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 135-175MHz RF characteristics data


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    AN-VHF-034-A RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/175MHz: RD12MVS1 mitsubishi 5218 5253 1007 PDF

    RA30H1317M1-201

    Abstract: Mitsubishi GP730 RA30H1317M1
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


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    RA30H1317M1 135-175MHz RA30H1317M1 30-watt 175-MHz RA30H1317M1-201 Mitsubishi GP730 PDF

    rf amplifier broad band

    Abstract: RD06HVF1 AN-VHF-026-A
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-026-A Date : 22th Nov. 2004 Rev.date : 7th Jan. 2010 Prepared : K.Inaba Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD06HVF1 broad band characteristics for 135-175MHz


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    AN-VHF-026-A RD06HVF1 135-175MHz 135MHz-175MHz RD06HVF1 135MHz 175MHz: rf amplifier broad band AN-VHF-026-A PDF

    RD07MUS2B

    Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor


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    RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120 PDF

    RA07M1317MS

    Abstract: RA07M1317MSA RA07M1317M-s RA07M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


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    RA07M1317MSA 135-175MHz RA07M1317MSA 175-MHz RA07M1317MS RA07M1317M-s RA07M PDF

    weidmuller 170125

    Abstract: 160505 din 46228 25nm 161871 Weidmuller BLZ 5.00 H07V-K analoge schaltkreise 132166 BL35
    Text: Steckverbindersysteme in metrischer Bauform Systemübersicht • BL 3.5/SL 3.5 Raster 3,5 mm Die Systeme zeichnen sich durch • BLZ 5.00/SL 5.00 (Raster 5,00 mm) • eine platzsparende Bauweise • BLZ 7.50/SL 7.50 (Raster 7,50 mm) • eine konische Drahteinführung


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    00/SL 50/SL 12-Rundstecker, weidmuller 170125 160505 din 46228 25nm 161871 Weidmuller BLZ 5.00 H07V-K analoge schaltkreise 132166 BL35 PDF

    160455

    Abstract: e 156176 163434 162585 Weidmuller BLZ 5.08 158134 163444 168802 ALNUP+161609 161573
    Text: Produktinformation Leiterplattenverbinder LeiterplattenSteckverbinder-Systeme Inhalt Allgemeine Informationen Gesamtübersicht 3 Der schnelle Weg zum optimalen Leiterplatten-Steckverbinder 4 Leiterplatten-Steckverbinder – praxisgerecht, zukunftssicher, kompatibel


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    H07V-K 160455 e 156176 163434 162585 Weidmuller BLZ 5.08 158134 163444 168802 ALNUP+161609 161573 PDF