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    RA60H1317M Search Results

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    RA60H1317M Price and Stock

    Mitsubishi Electric RA60H1317M1B

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    Bristol Electronics RA60H1317M1B 1
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    Mitsubishi Electric RA60H1317M

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RA60H1317M 1
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    Mitsubishi Electric RA60H1317M1A

    RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
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    Win Source Electronics RA60H1317M1A 3,700
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    Mitsubishi Electric RA60H1317M1A-501

    136-174MHz 60W 12.5V, 2Stage Amp. for Mobile Radio
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics RA60H1317M1A-501 1,168
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    RA60H1317M Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RA60H1317M Mitsubishi RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO Original PDF
    RA60H1317M Mitsubishi 135-175MHz 60W 12.5V MOBILE RADIO Original PDF
    RA60H1317M-01 Mitsubishi 135-175MHz 60W 12.5V MOBILE RADIO Original PDF
    RA60H1317M-01 Mitsubishi 135 - 175 MHz 60 W 12.5 V, 3 Stage Amp. for Mobile Radio Original PDF
    RA60H1317M-101 Mitsubishi RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO Original PDF
    RA60H1317M1A Mitsubishi RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO Original PDF
    RA60H1317M-E01 Mitsubishi 135-175MHz 60W 12.5V MOBILE RADIO Original PDF

    RA60H1317M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RA60H1317M-101

    Abstract: RA60H1317M RA60H1317M1
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz RA60H1317M-101 RA60H1317M1

    136-174MHz

    Abstract: ra60h1317m1a-101 RA60H1317M1A RA60H1317M1 174MHZ
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TENTATIVE DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to


    Original     		PDF RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz ra60h1317m1a-101 RA60H1317M1 174MHZ

    hatfield attenuator

    Abstract: RA60H1317M RA60H1317M-01 RA60H1317M-E01 RF MOSFET MODULE low voltage power transistor RF MODULE CIRCUIT DIAGRAM
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz hatfield attenuator RA60H1317M-01 RA60H1317M-E01 RF MOSFET MODULE low voltage power transistor RF MODULE CIRCUIT DIAGRAM

    RA60H1317M1

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz RA60H1317M1

    RA60H131

    Abstract: RA60H1317M-101
    Text: <Silicon RF Power Modules > RA60H1317M RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz RA60H131 RA60H1317M-101

    RA60H1317M1

    Abstract: RA60H1317M-101 RA60H1317M
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz RA60H1317M1 RA60H1317M-101

    RA60H1317M1

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to


    Original     		PDF RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz RA60H1317M1

    hatfield attenuator

    Abstract: RF MOSFET MODULE RA60H1317M RA60H1317M-01 RA60H1317M-E01 600 Watt Mosfet Power Amplifier
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz hatfield attenuator RF MOSFET MODULE RA60H1317M-01 RA60H1317M-E01 600 Watt Mosfet Power Amplifier

    RA60H1317M1

    Abstract: RA60H1317M1A RF MODULE CIRCUIT DIAGRAM for channel 4 RF MOSFET MODULE RD 15 mitsubishi 136-174MHz DD1002 mosfet marking code gg RF MODULE RA60H1317M1A MITSUBISHI RF POWER MODULE
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to


    Original     		PDF RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz RA60H1317M1 RF MODULE CIRCUIT DIAGRAM for channel 4 RF MOSFET MODULE RD 15 mitsubishi DD1002 mosfet marking code gg RF MODULE RA60H1317M1A MITSUBISHI RF POWER MODULE

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA60H1317M RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz

    RA60H1317M-01

    Abstract: RA60H1317M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz RA60H1317M-01

    RA60H1317M1

    Abstract: RA60H1317M1A-201 RA60H1317M1A 174MHZ RA60H1317M1A201 RA60H13 mitsubishi electric 174-MHz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to


    Original     		PDF RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz RA60H1317M1 RA60H1317M1A-201 174MHZ RA60H1317M1A201 RA60H13 mitsubishi electric

    RA60H1317M1A

    Abstract: RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to


    Original     		PDF RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor

    RA60H1317M-101

    Abstract: RA60H1317M1 RA60H1317M POUT60
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz RA60H1317M-101 RA60H1317M1 POUT60

    RA60H1317M1

    Abstract: RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-GEN-026-H Date : 18th Apr. 2003 Rev. date : 22th.Jun. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR


    Original     		PDF AN-GEN-026-H RA30H4452M 440-520MHz, 200pF, RA60H1317M1 RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original     		PDF 30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1

    RA60H1317M1

    Abstract: C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-GEN-026-G Date : 18th Apr. 2003 Rev. date : 7th Jan. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR


    Original     		PDF AN-GEN-026-G RA30H4452M 440-520MHz, 200pF, RA60H1317M1 C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


    Original     		PDF CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A

    RA60H1317M1

    Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series


    Original     		PDF AN-GEN-026-E AN-GEN-026-E RA30H4452M 440-520MHz, 200pF, RA60H1317M1 FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M