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    ZTX600 Search Results

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    ZTX600 Price and Stock

    Zetex / Diodes Inc ZTX600STOA

    TRANSISTOR,BJT,DARLINGTON,NPN,140V V(BR)CEO,1A I(C),TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ZTX600STOA 6,430
    • 1 $0.72
    • 10 $0.72
    • 100 $0.72
    • 1000 $0.72
    • 10000 $0.252
    		Buy Now

    ZTX600 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZTX600 Zetex Semiconductors NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR Original PDF
    ZTX600 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZTX600 Ferranti Semiconductors Super E-Line Transistors 1982 Scan PDF
    ZTX600 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    ZTX600 Zetex Semiconductors Super E-Line Transistors Scan PDF
    ZTX600 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZTX600A Zetex Semiconductors NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS Original PDF
    ZTX600A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ZTX600A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    ZTX600A Zetex Semiconductors Super E-Line Transistors Scan PDF
    ZTX600B Zetex Semiconductors NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS Original PDF
    ZTX600B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ZTX600B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    ZTX600B Zetex Semiconductors Super E-Line Transistors Scan PDF

    ZTX600 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZTX601

    Abstract: ZTX600 DSA003770
    Text: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*


    Original     		PDF ZTX600 ZTX601 100ms ZTX601 ZTX600 DSA003770

    Untitled

    Abstract: No abstract text available
    Text: ZTX600 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)140è V(BR)CBO (V)160 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200 I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2k


    Original     		PDF ZTX600 Freq150M

    ztx601

    Abstract: No abstract text available
    Text: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*


    Original     		PDF ZTX600 ZTX601 100ms ztx601

    Untitled

    Abstract: No abstract text available
    Text: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 – JUNE 94 FEATURES * 160 Volt VCEO * 1 Amp continuous current * Gain of 5K at IC=1 Amp * Ptot= 1 Watt C B E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX600


    Original     		PDF ZTX600 ZTX601 100ms

    Untitled

    Abstract: No abstract text available
    Text: ZTX600A Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)1 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2k h(FE) Max. Current gain.20k


    Original     		PDF ZTX600A Freq150M

    ZTX601

    Abstract: No abstract text available
    Text: ZTX600 Not Recommended for New Design Please Use ZTX601 ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K


    Original     		PDF ZTX600 ZTX601 ZTX601 ZTX600 100ms

    Untitled

    Abstract: No abstract text available
    Text: ZTX600B Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)1 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10k h(FE) Max. Current gain.100k


    Original     		PDF ZTX600B Freq150M

    ZTX 15

    Abstract: load dump pulse automotive relay driver circuit using darlington ZTX704-705 5V to 240V relay ic ZTX752 replacement ZTX600 zetex transistors equivalent ztx649 zvn4206 application
    Text: Application Note 5 Issue 2 February 1996 Super E-Line Applications in Automotive Electronics Replacement of Large Packaged Transistors with an Enhanced TO92 Product David Bradbury Car buyers are now demanding greater and greater sophistication in their purchases, which along with extra safety


    Original     		PDF ZTX649-653 ZTX749-753 ZTX602 ZTX603 ZTX604 ZTX704 ZTX605 ZTX705 ZTX602-605 ZTX704-705 ZTX 15 load dump pulse automotive relay driver circuit using darlington 5V to 240V relay ic ZTX752 replacement ZTX600 zetex transistors equivalent ztx649 zvn4206 application

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    ZTX600

    Abstract: tam 2k
    Text: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -J U N E 94_ — - FEATURES * 160 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t * G ain o f 5K a t lc=1 A m p * Ptot= 1 Watt


    OCR Scan     		PDF ZTX600 ZTX601 ZTX601 tam 2k

    ZTX600

    Abstract: ZTX601
    Text: NPN Silicon Medium Power Darlington Transistors ZTX600 ZTX601 FEATURES • • • • • 1,5W power dissipation at T amb= 2 5°C 1A continuous collector current High V CE0 up to 16 0 V Guaranteed hFE specified up to 1A Fast sw itching D E SC R IP T IO N


    OCR Scan     		PDF ZTX600 ZTX601 ZTX601 00jiS

    ferranti

    Abstract: ZTX600 ZTX601 Scans-00107859 Ferranti Semiconductors
    Text: FERRANTI semiconductors ZTX600 ZTX601 NPN Silicon Medium Power Darlington Transistors FE A T U R ES • 1.5W power dissipation at Tamb = 25°C • 1A continuous collector current • High V CE0 up to 160V • Guaranteed hFE specified up to 1A • Fast switching


    OCR Scan     		PDF ZTX600 ZTX601 ZTX601 100mA 100mA ferranti Scans-00107859 Ferranti Semiconductors

    ZTX601

    Abstract: l05a T092 ZTX600 ZTX601 B E C
    Text: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -JU N E 94 FEA T U R E S * 160 Volt V CE0 * * 1 Amp continuous current Gain of 5K at lc =1 Am p * Ptot= 1 W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage


    OCR Scan     		PDF ZTX600 ZTX601 ZTX600 ZTX601 300jis. l05a T092 ZTX601 B E C

    Untitled

    Abstract: No abstract text available
    Text: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -JU N E 94_ FEATURES * 160 V o lt VCE0 * 1 A m p c o n tin u o u s c u rre n t * G ain o f 5K a t lc=1 A m p * Ptot= 1 W a tt c . f E-Line


    OCR Scan     		PDF ZTX600 ZTX601

    MPSA42

    Abstract: MPSA43 ZTX341 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
    Text: SEMICONDUCTOR DICE NPN HIGH VOLTAGE Min. Min. Max. at V CB Volts Volts ZTX657 M PSA42 ZTX656 M PSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 h FE ICBO V CBO V CEO Dice type 300 300 200 200 150 16 0 140 125 120 10 0 300 300 200 200 150 14 0 120 125 120 100


    OCR Scan     		PDF ZTX657 MPSA42 ZTX656 MPSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341

    BC338C

    Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
    Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.


    OCR Scan     		PDF ZTX455 ZTX454 ZTX653 ZTX753 ZTX453 MPSA55 ZTX750 ZTX550 BC327A BC327B BC338C ZTX452 MPSA06 MPSA56 ZTX651 ZTX652

    BC372P

    Abstract: ZTX849 ZTX601A ZTX851 ZTX853 ZTX855 ZTX857 ZTX858 ZTX869 ZTX955
    Text: SUPER E-LINE TABLE 3: HIGH CURRENT SUPER E-LINE TRANSISTORS Pd=1.2 Watts This range of devices is rated at 1.2 Watts and offers extremely low saturation voltages coupled with high continuous and pulsed current capability. Typical application areas to benefit from these products


    OCR Scan     		PDF ZTX858* ZTX857 ZTX855 BCX38C FXT38C 2N6725 2N6724 ZTX705 FXT705 ZTX704 BC372P ZTX849 ZTX601A ZTX851 ZTX853 ZTX858 ZTX869 ZTX955

    MPSA42

    Abstract: MPSA43 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
    Text: SLE D • T c17057fl D 0 G 7 D S 1 fibT ■ Z E T B SEMICONDUCTOR DICE ZETEX S E M I C O N D U C T O R S NPN HIGH VOLTAGE V CBO V CEO 300 300 200 200 150 160 140 125 120 100 300 300 200 200 150 140 120 125 120 100 Volts Min. Max. 100 100 100 100 100 100 100


    OCR Scan     		PDF 00Q7DS1 ZTX657 MPSA42 ZTX656 MPSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX757 ZTX342

    BF493

    Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
    Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.


    OCR Scan     		PDF 1000mW ZTX4555 ZTX555 ZTX454 ZTX554 ZTX453S ZTX553 ZTX452 ZTX552 MPSA06 BF493 ZTX338 ZTX451 ZTX551 ZTX552 ZTX553 ZTX554

    ZT Ferranti

    Abstract: BF4935P SE-169 TX-550 X752 X449
    Text: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current


    OCR Scan     		PDF TQ-92 ZTX752 ZTX751 ZTX749 SO-96 107il/D SE172 ZT Ferranti BF4935P SE-169 TX-550 X752 X449

    2n6700

    Abstract: 2N6718 2N6714 2N6729 2n6717 2N6715 2N6716 2N6724 2N6725 2N6726
    Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N 6724 2N6725 2N6716 2 N 67 1 7 2N6731 2 N 6 7 18 V cbo 2 N 6 72 6 2 N 6 72 7 — — 2 N 67 2 8 2 N 67 2 9 2 N 67 3 2 2N6730 •c V CEO M ax. V CEIsat at •c m 'c mA


    OCR Scan     		PDF 2N6700 2N6714 2N6726 2N6715 2N6727 2N6724 2N6725 2N6716 2N6728 2N6717 2N6718 2N6729 2N6724 2N6725

    ZTX752 equivalent

    Abstract: transistor 42-10a data BC369 FXTA92 BSS98
    Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request


    OCR Scan     		PDF ZVP2106C ZVP2110A ZVP2110C ZVP2120A ZTX788B ZVP2120C ZVP3306A ZVP3310A ZVP4105A 2110C ZTX752 equivalent transistor 42-10a data BC369 FXTA92 BSS98

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TX750

    Abstract: ztx450 ztx550 ZETEX medium power complementary transistors ZTX650 zetex transistors TO92
    Text: SUPER E LINE PRODUCT DESCRIPTION Lead configurations The standard lead formation is collector-base-emitter c-b-e "in-line". Alternative lead configurations are available as plug in replacements for TO-5/39 and TO-18 metal can types as well as for surface


    OCR Scan     		PDF O-5/39 ZTX650 ZTX750 ZTX600 ZTX450/ZTX550 TX750 ztx450 ztx550 ZETEX medium power complementary transistors zetex transistors TO92