2N3633
Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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T092
Abstract: ZTX552 ZTX553
Text: ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES * 100 volt Vc.o 1 Amp continuous * Ptot= 1 Watt * current I ABSOLUTE MAXIMUM I RATINGS. E-Line T092 Compatible -~ ~rnitter-Base Voltage -——— v EBO — Peak Pulse Current
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ZTX552
ZTX553
-10-10V*
-15mA*
-150mA,
-50mA,
100MHz
T092
ZTX552
ZTX553
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ZTX552
Abstract: ZTX553 ZTX553 equivalent DSA003769
Text: ZTX552 ZTX553 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 td tr ns ns 100 200 -0.8 ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS tf ts µS nS 3 600 ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt Switching time VCE sat - (Volts)
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ZTX552
ZTX553
IC/10
-150mA,
-50mA,
100MHz
ZTX552
ZTX553
ZTX553 equivalent
DSA003769
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2n4889
Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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Untitled
Abstract: No abstract text available
Text: ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX552 ZTX553 UNIT Collector-Base Voltage
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ZTX552
ZTX553
100ms
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Tip300
Abstract: 2SA8140 BCX53 Rohm 2SA8150 rohm 6AE 2SA1358Y MM4006 2SA1358-Y 2SA815 2sb631 hitachi
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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202AC
220AB
126var
Tip300
2SA8140
BCX53 Rohm
2SA8150
rohm 6AE
2SA1358Y
MM4006
2SA1358-Y
2SA815
2sb631 hitachi
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Untitled
Abstract: No abstract text available
Text: ZTX552 Not Recommended for New Design Please Use ZTX553 ZTX552 ZTX553 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 td tr ns ns 100 200 -0.8 ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS tf ts µS nS 3 600 ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current
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ZTX552
ZTX553
ZTX553
100ms
ZTX552
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mn2510
Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
Text: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @
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OT-223
STN878
STN724
STN690A
STN749
STN888
STN826
STN790A
2STN2540
2STN1550
mn2510
2sC5200, 2SA1943, 2sc5198
sanken mn2510
TRANSISTOR REPLACEMENT GUIDE hsd882s
KEC SOT89
ZTX617
TRANSISTOR REPLACEMENT GUIDE
Replacement SANKEN mn2510
2sc5198 cross references
2SA1941 "cross reference"
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX552 ZTX553 ISSUE 1 - MARCH 94_ FEATURES * 100 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t * P,ot= 1 W a tt E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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ZTX552
ZTX553
ZTX553
-150mA,
-15mA*
100MHz
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ZTX552
Abstract: ZTX452 ferranti E-Line package Scans-00107857
Text: 4 semiconductors FERRANTI ZTX552 PNP Sil icon Planar M e d iu m P o w e r Transistors FEATURES • High power dissipation: 1W at Tamb » 25*C. • hFE specified up to 1 amp. • High V CE0 up to 80 volts. • Complementary to ZTX452. GENERAL DESCRIPTION
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ZTX552
ZTX452.
ZTX552
ZTX452
ferranti
E-Line package
Scans-00107857
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ZTX553
Abstract: No abstract text available
Text: ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 A\ FEATURES * 100 Volt V CE0 * 1 Am p continuous current * Pt„,=1 tot W att M 4f E-Line T 09 2 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX552 ZTX553 Collector-Base Voltage
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ZTX552
ZTX553
cH7Q57Ã
001G35S
ZTX553
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2TX552
Abstract: SE82
Text: PNP Silicon Planar Medium Power Transistors ZTX552 ZTX553 FEATURES • • • High power dissipation: 1W at Tamb= 2 5 °C hFE specified up to 1A High fT: 200MHz typical DESCRIPTION These are plastic encapsulated, general purpose transistors designed for small and
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ZTX552
ZTX553
200MHz
100MHz
2TX552
SE82
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m 60 n 03 g10
Abstract: No abstract text available
Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60
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7057fl
2N2907A
2N2907
BCY70
BCY71
BCY72
2N4403
m 60 n 03 g10
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ZTX751
Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.
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ZTX455
ZTX454
ZTX653
ZTX753
ZTX453
ZTX652
ZTX552
ZTX452
MPSA56
MPSA06
ZTX751
ZTX651
ZTX551
ZTX753
ZTX337
ZTX452
MPSA06
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BC337b
Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Text: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector
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2N3262
T0-39
T0-18
ZTX552
MPSA56
ZTX751
ZTX551
MPSA55
ZTX750
ZTX550
BC337b
bc327b
2N2102
2N4036
BCY65E
BFX84
BFX85
ZT86
ZT88
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BCY56
Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple ment
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2N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BSY51
BSY52
BC107
BCY56
2N1131
2N1132
2N4037
BC177
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ZTX107
Abstract: ZTX108 ZTX452 BC546P BC556P BFS61 BFS98 MPSA06 MPSA56 ZTX451
Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, AND GENERAL PURPOSE
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ZTX453
ZTX452
ZTX552
MPSA06
MPSA56
BC546P
BC556P
ZTX451
BC183P
BC213P
ZTX107
ZTX108
BC556P
BFS61
BFS98
MPSA56
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transistor ZTX302
Abstract: ZTX502 transistor ztx304 BFS98 ZTX109 ZTX452 transistor MPSA06 transistor ZTX108 BC546P BC556P
Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and O UTPUT ST A G ES, O SC ILLA TO RS, AND GENERAL PURPO SE
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ZTX453
ZTX452
ZTX552
MPSA06
MPSA56
BC546P
BC556P
ZTX451
BC558B
BC558C
transistor ZTX302
ZTX502
transistor ztx304
BFS98
ZTX109
transistor MPSA06
transistor ZTX108
BC556P
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BC337B
Abstract: m 60 n 03 g10 BC327C
Text: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA
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ZTX653
ZTX453
2N1893
ZTX652
ZTX452
MPSA06
ZTX651
ZTX451
BFY50
2N1613
BC337B
m 60 n 03 g10
BC327C
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ZTX301
Abstract: BC557P BFS60 BFS98 ZTX108 BC546P BC556P BFS61 MPSA06 MPSA56
Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE
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ZTX453
ZTX452
ZTX552
MPSA06
MPSA56
BC546P
BC556P
ZTX451
2N3904
2N3905
ZTX301
BC557P
BFS60
BFS98
ZTX108
BC556P
BFS61
MPSA56
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BC338C
Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.
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ZTX455
ZTX454
ZTX653
ZTX753
ZTX453
MPSA55
ZTX750
ZTX550
BC327A
BC327B
BC338C
ZTX452
MPSA06
MPSA56
ZTX651
ZTX652
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bc177
Abstract: BFS98 BFS59 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Text: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and OUTPUT ST A G ES, O SC ILLA TO RS, AND GEN ERAL PURPO SE
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ZTX552
ZTX452
MPSA56
MPSA06
BC556P
BC546P
ZTX551
ZTX451
BFS98
MPSA55
bc177
BFS59
ZTX452
BC546P
BFS61
MPSA06
ZTX451
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BFS98
Abstract: ZTX313 ZTX109 ZTX302 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE
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ZTX453
ZTX452
ZTX552
MPSA06
MPSA56
BC546P
BC556P
ZTX451
30-15k
2N3903
BFS98
ZTX313
ZTX109
ZTX302
BC556P
BFS61
MPSA56
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ZTX651
Abstract: ZTX692B ZTX650 ZTX652 ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860
Text: TABLE 8 : NPN/PNP SUPER E-LINE TYPES These devices offer the ultimate performance for TO -9 2 style package. They have been designed to operate and provide useful gain at current levels up to 6 A with power dissipation capabilities in excess of 1W at 2 5 ° C ambient temperature.
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ZTX6535
ZTX753
ZTX652
ZTX752
ZTX651Â
ZTX751
ZTX650
ZTX750
ZTX6495
ZTX749
ZTX651
ZTX692B
ZTX749
ZTX750
ZTX751
ZTX752
ZTX753
Scans-00107860
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