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    Micro Commercial Components 2N6718-AP

    TRANS NPN 100V 1A TO92
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    Micro Commercial Components 2N6718-BP

    TRANS NPN 100V 1A TO92
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    2N6718 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6718 Central Semiconductor Power Transistor Original PDF
    2N6718 Siemens Cross Reference Guide 1998 Original PDF
    2N6718 Unisonic Technologies NPN GENERAL PLANAR TRANSISTOR Original PDF
    2N6718 Zetex Semiconductors NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Original PDF
    2N6718 Central Semiconductor Power Transistors TO-237 Case Scan PDF
    2N6718 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    2N6718 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N6718 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6718 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N6718 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6718 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6718 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6718 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6718 National Semiconductor General Purpose Amplifiers and Switches Scan PDF
    2N6718 National Semiconductor Transistors Scan PDF
    2N6718 National Semiconductor NPN Medium Power Transistors Scan PDF
    2N6718 National Semiconductor Medium Power Transistors Scan PDF
    2N6718 National Semiconductor Medium Power NPN Transistors Scan PDF
    2N6718 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N6718 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF

    2N6718 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6718

    Abstract: 2n6717 2N6716 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718
    Text: 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 High Voltage：VCEO = 100V Gain of 20 @ IC = 0.5A G H Emitter


    Original     		PDF 2N6716 2N6717 2N6718 2N6716 2N6717 250mA, 2N6718 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications.  FEATURES * High Power: 850mW * High Current: 1A


    Original     		PDF 2N6718 2N6718 850mW 2N6718L-x-AB3-R 2N6718G-x-AB3-R 2N6718L-x-T6C-K 2N6718G-x-T6C-K 2N6718L-x-T92-B 2N6718G-x-T92-B 2N6718L-x-T92-K

    2N6718

    Abstract: IC350 2N6718L
    Text: UNISONIC TECHNOLOGIES CO., LTD. 2N6718 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES 1 *High Power: 850mW *High Current: 1A


    Original     		PDF 2N6718 2N6718 850mW O-126C 2N6718L 2N6718-T6C-A-K 2N6718L-T6C-A-K O-126C QW-R217-007 IC350 2N6718L

    2N6718

    Abstract: No abstract text available
    Text: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR


    Original     		PDF 2N6718 2N6718 850mW QW-R201-056

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N6718 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF 2N6718 250mA 500mA 250mA

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications.  FEATURES * High Power: 850mW * High Current: 1A


    Original     		PDF 2N6718 2N6718 850mW 2N6718G-x-AB3-R OT-89 2N6718L-x-T6C-K 2N6718G-x-T6C-K O-126C 2N6718L-x-T92-B 2N6718G-x-T92-B

    2N6718 TO-237

    Abstract: 2n6718 transistor 2n6718 IC350
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6718 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage


    Original     		PDF ISO/TS16949 2N6718 O-237 C-120 2N6718 TO-237 2n6718 transistor 2n6718 IC350

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6718 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC


    Original     		PDF 2N6718 O-237 C-120

    Untitled

    Abstract: No abstract text available
    Text: UTC 2N6718 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES *High Power: 850mW *High Current: 1A 1 TO-92 1:EMITTER 2: COLLECTOR


    Original     		PDF 2N6718 2N6718 850mW QW-R201-056 100ms

    2N6718

    Abstract: 2N6716 2N6717 ic-250mA DSA003749
    Text: 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6716 Collector-Base Voltage VCBO


    Original     		PDF 2N6716 2N6717 2N6718 250mA, 250mA 2N6718 2N6716 2N6717 ic-250mA DSA003749

    Ztx653

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use ZTX449 / ZTX453 / ZTX653 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZTX449 ZTX453 ZTX653 2N6716 2N6717 2N6718 2N6718 Ztx653

    2N6718L

    Abstract: 2n6718 2n6718 equivalent 2n6718l applications T6C transistor NPN transistor 500ma TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR „ DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. „ FEATURES * High Power: 850mW * High Current: 1A *Pb-free plating product number: 2N6718L


    Original     		PDF 2N6718 2N6718 850mW 2N6718L 2N6718G 2N6718-x-AB3-R 2N6718-x-T6C-K 2N6718-x-T92-B 2N6718-x-T92-K 2N6718L-x-AB3-R 2N6718L 2n6718 equivalent 2n6718l applications T6C transistor NPN transistor 500ma TO-92

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6718 NPN SILICON PLANAR EPITAXIAL TRANSISTOR Designed for General Purpose Medium Power Amplifier and Switching Circuits.


    Original     		PDF O-237 2N6718 C-120

    Untitled

    Abstract: No abstract text available
    Text: 2N6718 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)250m


    Original     		PDF 2N6718 Freq50M

    3 phase IGBT inverter design by ir2130

    Abstract: IR2130 INVERTER SCHEMATIC 3 phase inverter ir2130 IR2130 APPLICATION NOTE 3 phase brushless dc control ir2130 3 phase inverter schematic diagram ir2130 schematic diagram 110v dc motor speed controller 2n6718 equivalent ML4425 DC 74HC04
    Text: June 1996 Application Note 43 Using the ML4425/ML4426 BLDC Motor Controllers by John DeFiore INTRODUCTION THEORY OF OPERATION The purpose of this document is to explain the theory and application of Micro Linear’s ML4425 and ML4426 brushless DC motor controller IC’s, with speed control. It


    Original     		PDF ML4425/ML4426 ML4425 ML4426 3 phase IGBT inverter design by ir2130 IR2130 INVERTER SCHEMATIC 3 phase inverter ir2130 IR2130 APPLICATION NOTE 3 phase brushless dc control ir2130 3 phase inverter schematic diagram ir2130 schematic diagram 110v dc motor speed controller 2n6718 equivalent DC 74HC04

    1500 rpm 24V BLDC motor

    Abstract: ML4425 Micro Linear Application Note ML4425 ML4425C Sensorless BLDC Motor Controller ML4425
    Text: May 1997 ML4425/ML4426 Sensorless BLDC PWM Motor Controller GENERAL DESCRIPTION FEATURES The ML4425/ML4426 PWM motor controllers provide all of the functions necessary for starting and controlling the speed of delta or wye wound Brushless DC Motors BLDC without


    Original     		PDF ML4425/ML4426 1500 rpm 24V BLDC motor ML4425 Micro Linear Application Note ML4425 ML4425C Sensorless BLDC Motor Controller ML4425

    BF963

    Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
    Text: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99


    Original     		PDF OD-123 1N4001 1N4002 1N4003 1N4004 1N4148 BF963 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd

    2N6730

    Abstract: 2N6728 SE194 2N6716 7292n 2n 6718 2N6718 SE-194
    Text: Silicon Planar Medium Power Transistors NPN 2N6716 2N6717 2N6718 PNP 2N6728 2N6729 2N6730 FEATURES • High V CE ratin g s up to 1 00 vo lts • Exceptional p o w e r dissip atio n cap a bility - 2 W @ T c a s e = 2 5 °C - 1W @ T amb = 2 5 °C • h FE specified up to 5 0 0 m A


    OCR Scan     		PDF 2N6716 2N6717 2N6718 2N6728 2N6729 2N6730 SE194 2N6730 SE194 7292n 2n 6718 SE-194

    2N6716

    Abstract: 2N6718
    Text: 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94_ FEATURES * 100 Volt V,CEO G ain o f 20 at lc = 0.5 A m p Ptot=1 W att E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage


    OCR Scan     		PDF 2N6716 2N6717 2N6718 2N6718 250mA

    2N6718 NATIONAL SEMICONDUCTOR

    Abstract: T0-237 NSDU07 bc640 to237 2N6717 T0237 2N6730 2N6718 mpsa06 2N3019
    Text: bflE J> m fc,SD113D ODBTSIS STT • NSC5 NATL SEHICOND D I S C R E T E Devices V C£0(su*l> 100 PUP NPN 2N6553 2N6718 80 2N6730 mA (MHz) Min IDA NF (dB) Max P d (Amb) Package (mW) Max Min Max 1000 80 250 50 75 100 T0-202(55) 1333 1000 50 250 250 50 200


    OCR Scan     		PDF SD113D 2N6553 T0-202 2N6718 2N6730 T0-237 NSDU07 2N3019 2N3700 2N6718 NATIONAL SEMICONDUCTOR NSDU07 bc640 to237 2N6717 T0237 mpsa06 2N3019

    ztx614

    Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
    Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80


    OCR Scan     		PDF 2N6700 2N6714 2N6726 2N6715 2N6727 2N6724 2N6725 2N6716 2N6728 2N6717 ztx614 2n6718 2N6724 2N6725

    2N6715

    Abstract: 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229
    Text: TO-237 Plastic Package Transistors NPN Max mum Rating s Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Type ^CBO No. ^CE ^EBO (V) Min (V) Min (V) Min @Tc=25 c 50 40 5 0.75 2N6715 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735


    OCR Scan     		PDF O-237 2N6715 O-237-2 2N6716 2N6717 2N6718 O-237-1 CIL2328A 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229

    Untitled

    Abstract: No abstract text available
    Text: 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94_ FE A T U R E S * 100 Volt V,CEO Gain of 20 at lc = 0.5 A m p P ,o t= 1 Watt E E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    OCR Scan     		PDF 2N6716 2N6717 2N6718 250mA, 250mA

    T1P42C

    Abstract: No abstract text available
    Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN


    OCR Scan     		PDF O-220 O-220 O-237-2 00014QÃ T1P42C