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    ZT82 Price and Stock

    OMRON Industrial Automation E3Z-T82-2M

    SENSOR THROUGH-BEAM 30M PNP
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    DigiKey E3Z-T82-2M Bulk 1
    • 1 $194.45
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    Rubycon Corporation 16ZT820M10X23

    CAP ALUM 820UF 20% 16V RADIAL TH
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    DigiKey 16ZT820M10X23 Bulk 1,000
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    Rubycon Corporation 16ZT820MT810X23

    CAP ALUM 820UF 20% 16V RADIAL TH
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    DigiKey 16ZT820MT810X23 Ammo Pack 500
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    Surge Components Inc VZT821M1ETR-1010S

    CAP ALUM 25V POLAR
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    DigiKey VZT821M1ETR-1010S Reel 5,000
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    OMRON Corporation E3Z-T82-M1TJ 0.3M

    Photoelectric Sensor with Built-in Amplifier Infrared Light Through-Beam 12V to 24V 30m Sensing Distance - Bulk (Alt: E3ZT82M1TJ03M)
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    Avnet Americas E3Z-T82-M1TJ 0.3M Bulk 1
    • 1 $167.832
    • 10 $165.0348
    • 100 $156.6432
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    Find more ZT82 price and stock on Findchips.com

    ZT82 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZT82 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package Original PDF
    ZT82 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZT82 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    ZT82 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    ZT82 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZT82 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZT82 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ZT82 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ZT82 Unknown Shortform Electronic Component Datasheets Short Form PDF
    ZT82 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF

    ZT82 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ZT82 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 35V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		O206AA) 16-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZT82 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 35V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		O206AA) 19-Jun-02 PDF

    2N2222A zetex

    Abstract: No abstract text available
    Text: ZETEX S E M I C O N D U C T O R S IbE D • TTVDSTfl OOObfl4ö ñ ■ ZETB METAL CAN SPECIFICATIONS ~rz°i - Z 3 NPN LOW NOISE Type ZT91 ZT92 BSY55 ZT93 ZT86 ZT88 ZT89 ZT90 ZT95 BCY65E 2N2484 ZT94 ZT83 ZT84 BCY59 BCY56 2N930 2N2219A 2N2222A ZT81 ZT82 BCY58


    OCR Scan     		BSY55 BCY65E 2N2484 BCY59 BCY56 2N930 2N2219A 2N2222A BCY58 BSY51 2N2222A zetex PDF

    N2222

    Abstract: 2n222 2n222a ZTX326 BFS59 BFS60 BFS61 BFX84 BFY50 BFY51
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89


    OCR Scan     		BFS59 BFS60 BFS61 BFS96-98 BFX84 BFS36 2N930 BFS37 2N2605 BFS36A N2222 2n222 2n222a ZTX326 BFY50 BFY51 PDF

    N2222

    Abstract: 2N222A 2N222 2N222-A 2N2708 2n3600 N222 BFS59 BFS60 BFS61
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89


    OCR Scan     		BFS59 BFS60 BFS61 BFS96-98 BFX84 2N3571 2N3572 2N3600 at60MHz tat200 N2222 2N222A 2N222 2N222-A 2N2708 N222 PDF

    ZT82

    Abstract: No abstract text available
    Text: ZT82 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 35V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		O206AA) 2-Aug-02 ZT82 PDF

    2N222A

    Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92


    OCR Scan     		BFS59 BFS60 BFS61 BFS96-98 BFX84 KS77B KS78B 2N222A N2222 zs90 2N222 ZS150 2n3600 2N222-A PDF

    Untitled

    Abstract: No abstract text available
    Text: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4


    OCR Scan     		000bt 2N3053 2N696 2N697 BFY51 BSY51 BSY52 BC107 BCY59 BCY56 PDF

    TO-39 1000 V

    Abstract: No abstract text available
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V PDF

    bc140

    Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
    Text: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


    OCR Scan     		BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 BCY58 bc140 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 PDF

    N706A

    Abstract: BC107 N706 N3053 BC178 2N1131 2n3053 2N4037 2N696 2N697
    Text: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037


    OCR Scan     		N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 N706A N706 BC178 2N1131 2n3053 2N4037 PDF

    BC108 transistor

    Abstract: bc140 2N2102 2N2605 2N4036 BC141 BC161 BCY65E BCY77 ZT189
    Text: PNP LOW LEVEL TABLE 2 - PN P SILICON PLA N A R LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		ZT211 ZT184 BCY79 BCY59 BCY71 ZT181 ZT182 BC160 BC140 BCY78 BC108 transistor bc140 2N2102 2N2605 2N4036 BC141 BC161 BCY65E BCY77 ZT189 PDF

    2N2102

    Abstract: 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86 ZT88
    Text: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR M E D IU M AN D HIGH SPEED SW ITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector Current


    OCR Scan     		2N3262 BCY79 2N2218A 2N2904A 2N2219A 2N2905A 2N2221A 2N2906A 2N2222A 2N2907A 2N2102 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86 ZT88 PDF

    BC338C

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BC328A BC328B BC328C BC338C 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 PDF

    2n2218a

    Abstract: 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86
    Text: NPN SWITCHING TA B LE 3 NPN SILICO N PLAN AR M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S The devices shown in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and Military equipments.


    OCR Scan     		2N3262 BCY79 BFX86 2N2218A 2N2904A 2N2219A 2N2905A 2N2221A 2N2906A 2N2222A 2N2102 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86 PDF

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment


    OCR Scan     		2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177 PDF

    typical 2n2222 npn transistors

    Abstract: 2N2475 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E FF2222J FF2483E
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


    OCR Scan     		FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J MoulTO-18 typical 2n2222 npn transistors 2N2475 2N2222 2N2483 PDF

    N2907

    Abstract: ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189
    Text: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


    OCR Scan     		BCY70 2N2605 2N2604 ZT181 ZT182 BCY78 BCY58 BCY72 ZT180 ZT187 N2907 ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189 PDF

    BSY55

    Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		2N2219A 2N2905A 2N2222A 2N2907A ZT181 BCY58 T0-18 BCY78 BSY51 BSY55 Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88 PDF

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177 PDF

    bc140

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		BCY79 2N2218A 2N2904A 2N2219A 2N2905A 2N2221A 2N2906A 2N2222A 2N2907A BFY50 bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 PDF

    BSY55

    Abstract: Scans-00107830 2N2222A zetex BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		BSY55 2N2102 2N4036 Scans-00107830 2N2222A zetex BCY56 2N1893 2N2405 2N4036 BFX85 ZT86 PDF

    2n222a

    Abstract: ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 ZT1482
    Text: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.


    OCR Scan     		ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 2n222a ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 PDF

    2N2222

    Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906
    Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*


    OCR Scan     		BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2904 2N2219 transistor 2N2475 2N2905 2N2906 PDF