WHITE MICROELECTRONICS 14 PIN DIP Search Results

Contextual Info: WHITE /MICROELECTRONICS WS512K8-XCX 512Kx8 SRAM MODULE FEATURES FIG. 1 • A c c e ss T im e s 20, 25, 35, 45nS PIN CONFIGURATION TOP VIEW E 1 A 16 E 2 A 14 E 3 A 12 E 4 A7 E 5 A6 E 6 A5 E 7 A4 E 8 A3 E g A2 E 10 A1 E 11 AO E 12 i/oo E 13 i/oi E 14 I/0 2 E 15

Contextual Info: T T WE256K16-XCX WHITE /MICROELECTRONICS 256Kx16 CMOS EEPROM PRELIMINARY* 256Kx16 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN C O N F IG U R A T IO N T O P V IE W CS2 C 1 40 JVcc csi C 2 39 HWË 1/015 C 3 38 H A16 1/014 C 4 1/013 C 5 37 H A15 36 D A 14 1/012 C 6

Contextual Info: T T WHITE /MICROELECTRONICS WS512K8-XCX 512Kx8 SRAM MODULE FEATURES FIG. 1 • A c c e ss T im e s 55, 70, 8 5 , 1 0 0 , 1 20nS PIN CONFIGURATION TOP VIEW E E A 14 E A 12 E A7 E A6 E A5 E A4 E A3 E A2 E A1 E AO E i/o o E 1/01 E I/0 2 E Vss E A 18 1 A 16 2

WF128K16

Abstract: WF256K16-XCX5
Contextual Info: WF128K16, WF256K16-XCX5 5V FLASH MODULE PRELIMINARY * FEATURES • Access Times of 50, 60, 70, 90, 120 and 150ns ■ 5 Volt Programming; 5V ±10% Supply ■ 40 pin Ceramic DIP Package 303 ■ Low Power CMOS ■ Organized as 128Kx16 and 256Kx16 ■ Embedded Erase and Program Algorithms

Contextual Info: WS1M8V-XCX 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • Access Times 17, 20, 25, 35, 45, 55ns ■ Evolutionary, Corner Power/Ground Pinout 32 DIP TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25

Contextual Info: I/VHITE /MICROELECTRONICS WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SM D 5962-95613 FEATURES EVOLUTIONARY PINOUT • A ccess Times 70, 8 5 ,1 0 0 ,120ns 32 DIP 32 C S O J DE ■ MIL-STD-883 Compliant Devices Available ■ Evolutionary, Corner Power/Ground Pinout

Contextual Info: a WMF512K8-XXX5 WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC FLASH, SM D 5962-96692 FEATURES • A ccess Tim es of 70, 90, 120, 150ns ■ Organized as 512Kx8 ■ Packaging • 32 pin, Herm etic Ceramic, 0.600" DIP Package 300 • 3 2 lead, Herm etic Ceram ic, 0.400" S O J (Package 101)

WF512K8-XCXB

Abstract: WF256K8
Contextual Info: UH ITE M ICRO ELECTRO N ICS 5V FLASH MODULE PRELIMINARY WF256K8, WF512K8-XCX5 * FEATURES • Access Tim es of 60, 70, 90 and 150nS ■ 5 V o lt Programm ing; 5V ±10% Supply ■ 32 pin Ceram ic DIP, JEDEC approved Package 300 ■ Low Power CM OS ■ Organized as 256K x 8 and 512K x 8

Contextual Info: a WMF512K8-XXX5 WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC FLASH, SMD 5962-96692 FEATURES • A ccess Tim es of 70, 9 0 ,1 2 0 ,150ns ■ Organized as 512Kx8 ■ Packaging • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300 • 32 lead, Herm etic Ceramic, 0.400" S O J (Package 101)

WMS512K8V-XXX

Abstract: NS1005
Contextual Info: WMS512K8V-XXX 512Kx8 MONOLITHIC SRAM PRELIMINARY* FEATURES EVOLUTIONARY PINOUT • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available ■ Low Voltage Operation 32 DIP 32 CSOJ DE TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32

Contextual Info: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES EVOLUTIONARY PINOUT • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available 32 DIP 32 CSOJ DE A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8

Contextual Info: WHITE MICROELECTRONICS 5V FLASH MODULE WF128K16, WF256K16-XCX5 PRELIMINARY * FEATURES • A c c e ss T im e s of 6 0 ,7 0 , 90 and 150nS ■ 5 V o lt P ro g ram m ing ; 5 V ±10% S up p ly ■ 4 0 pin C era m ic DIP Package 303 ■ Lo w P o w e r C M O S

WMS512K8-XXX

Abstract: A16 SMD smd a17 power SMD A18 Transistor smd a7 transistor smd transistor a4 smd transistor A6 3 512k 8 sram 3v power supply
Contextual Info: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES EVOLUTIONARY PINOUT • Access Times 70, 85, 100, 120nS ■ MIL-STD-883 Compliant Devices Available 32 DIP 32 CSOJ DE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21

Contextual Info: WS1M8-XCX 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8-XCX • Access Times 70, 85, 100ns ■ Evolutionary, Corner Power/Ground Pinout 32 DIP ■ Packaging: TOP VIEW 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5

Contextual Info: WMF256K8-XXX5 M/HITE M ICROELECTRONICS 256Kx8 MONOLITHIC FLASH FEATURES • Access Times of 70, 9 0 ,1 2 0 ,150ns ■ Organized as 256Kx8 ■ Packaging • 32 pin, Hermetic Ceramic, 0.600” DIP Package 300 • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)

Contextual Info: HHITE /M ICRO ELECTRONICS W MF128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • Access Tim es of 60, 70, 9 0 ,1 2 0 ,150ns ■ Organized as 128Kx8 ■ Packaging ■ Commercial, Industrial and M ilita ry Tem perature Ranges • 32 lead, Hermetic Ceramic, 0.400" S O J Package 101

Contextual Info: WME128K8-XXX WHITE /MICROELECTRONICS 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 140,150, 200, 250, 300nS PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 C S O J • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300

Contextual Info: a WMS128K8C-XXX WHITE /MICROELECTRONICS 128Kx8 MONOLITHIC SRAM FEATURES EVOLUTIONARY PINOUT 32 DIP 32 CSOJ DE 32 FLAT PACK (FE) • A ccess Tim es 1 5 ,1 7 , 20, 25, 35, 45, 55ns ■ R adiation T o le ran t D evices A va ila b le ■ TOP VIEW • 32 pin C eram ic DIP (Package 300)

Contextual Info: WF128K32-XXX5 128KX32 5V FLASH MODULE, SMD 5962-94716 FEATURES • Access Times of 50*, 60, 70, 90, 120, 150ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging: • 66 pin, PGA Type, 1.075 inch square, Hermetic Ceramic HIP Package 400

512KX8SRAM

Contextual Info: WMS512K8-XXX WHITE /MICROELECTRONICS 512 Kx8 MONOLITHIC SRAM FEATURES • Access Times 17, 20, 25, 35, 45, 55nS Commercial, Industrial and Military Temperature Range ■ MIL-STD-883 Compliant Devices Available, S M D # 5962-95613 pending 5 Volt Power Supply

Contextual Info: a WMF128K8-XXX5 WHITE /MICROELECTRONICS 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • A ccess Tim es of 60, 70, 9 0 ,1 2 0 ,150ns ■ Organized as 128Kx8 ■ Packaging ■ Com m ercial, Industrial and M ilita ry Tem perature Ranges • 3 2 lead, Herm etic Ceram ic, 0.400" S O J Package 101

Contextual Info: VA UNITE /MICROELECTRONICS 512Kx8 S RAM p r e l im in a r y WPS512K8L-XXX * PLASTIC PLUS FEATURES • PIN CONFIGURATION TOP VIEW ■ A14 C A12C A7C A6C A5 C 3 4 S i/ooC 13 1/01C 14 I/02C 15 Vss □ 16 • 32 Pin 600mil Plastic DIP 31 □ A15 30 □ A17

Contextual Info: T T W MS512K8BV-XXXE M/HITE /M ICROELECTRONICS 512Kx8 MONOLITHIC SRAM PRELIMINARY* FEATURES Low Voltage Operation: • Access Times 15,17, 20ns ■ MIL-STD-883 Compliant Devices Available • 3.3V ± 1 0 % Power Supply ■ Revolutionary, Center Power/Ground Pinout

WS512K32BV-XG2XE

Abstract: WS512K32BV-XXXE WS512K32NBV-XH2XE
Contextual Info: WS512K32BV-XXXE 512Kx32 3.3V SRAM MODULE PRELIMINARY* FEATURES • ■ ■ ■ ■ ■ Access Times of 15†, 17, 20ns ■ MIL-STD-883 Compliant Devices Available ■ Low Voltage Operation Commercial, Industrial and Military Temperature Ranges 3.3 Volt Power Supply