Untitled
Abstract: No abstract text available
Text: WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 125, 140, 150, 200, 250, 300ns Page Write Cycle Time 10ms Max. JEDEC Approved Packages Data Polling for End of Write Detection Hardware and Software Data Protection
|
Original
|
PDF
|
WME128K8-XXX
128Kx8
300ns
MIL-STD-883
|
Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900* Weight FEATURES Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical Access Times of 70ns (SRAM) and 120ns (FLASH)
|
Original
|
PDF
|
WSF128K16-XXX
128Kx16
WSF128K16-H1X
WSF128K16-XG1UX1
120ns
66-pin,
ICCx32
|
5962-96691
Abstract: WMS128K8-XXX
Text: WMS128K8-XXX HI-RELIABILITY PRODUCT 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 pending FEATURES • Access Times 70, 85, 100, 120ns ■ Commercial, Industrial and Military Temperature Range ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 32 lead Ceramic SOJ (Package 101)
|
Original
|
PDF
|
WMS128K8-XXX
128Kx8
120ns
MIL-STD-883
04HUX
01HTX
100ns
02HTX
03HTX
5962-96691
WMS128K8-XXX
|
5962-96691
Abstract: No abstract text available
Text: WMS128K8-XXX 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES n MIL-STD-883 Compliant Devices Available n Access Times 70, 85, 100, 120ns n Commercial, Industrial and Military Temperature Range n Revolutionary, Center Power/Ground Pinout JEDEC Approved n 5 Volt Power Supply
|
Original
|
PDF
|
WMS128K8-XXX
128Kx8
MIL-STD-883
120ns
04HTX
01HYX
100ns
02HYX
03HYX
5962-96691
|
5962-96691
Abstract: WMS128K8-XXX
Text: WMS128K8-XXX White Electronic Designs 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES n MIL-STD-883 Compliant Devices Available n Access Times 70, 85, 100, 120ns n Commercial, Industrial and Military Temperature Range n Revolutionary, Center Power/Ground Pinout
|
Original
|
PDF
|
WMS128K8-XXX
128Kx8
MIL-STD-883
120ns
04HTX
01HYX
100ns
02HYX
03HYX
5962-96691
WMS128K8-XXX
|
WME128K8-XXX
Abstract: No abstract text available
Text: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 120, 140, 150, 200, 250, 300ns Automatic Page Write Operation JEDEC Approved Packages • Internal Control Timer • 32 pin, Hermetic Ceramic, 0.600" DIP
|
Original
|
PDF
|
WME128K8-XXX
128Kx8
300ns
MIL-STD-883
120ns
06HYX
01HXX
250ns
02HXX
WME128K8-XXX
|
SD10
Abstract: SD13 SD14 SD15 WSF128K16-XXX scs 2003
Text: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES TTL Compatible Inputs and Outputs Access Times of 35ns SRAM and 70ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Access Times of 70ns (SRAM) and 120ns (FLASH)
|
Original
|
PDF
|
WSF128K16-XXX
128Kx16
120ns
WSF128K16-XHX
WSF128K16-H1X
WSF128K16-XG1UX1
WSF128K16-XG1TX
66-pin,
SD10
SD13
SD14
SD15
WSF128K16-XXX
scs 2003
|
Untitled
Abstract: No abstract text available
Text: WMS128K8-XXX HI-RELIABILITY PRODUCT 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 pending FEATURES • Access Times 70, 85, 100, 120ns ■ Commercial, Industrial and Military Temperature Range ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 32 lead Ceramic SOJ (Package 101)
|
Original
|
PDF
|
WMS128K8-XXX
128Kx8
120ns
MIL-STD-883
01HUX*
02HUX*
03HUX*
04HUX*
01HTX*
02HTX*
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 EVOLUTIONARY PINOUT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND FEATURES 32 DIP 32 CSOJ DE • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available
|
Original
|
PDF
|
WMS512K8-XXX
512Kx8
120ns
MIL-STD-883
A0-18
120ns
100ns
01HYX
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Times of 120, 140, 150, 200, 250, 300ns PIN CONFIGURATION 32 DIP 32 CSOJ TOP VIEW NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS
|
Original
|
PDF
|
WME128K8-XXX
128Kx8
300ns
MIL-STD-883
of128K
300ns
250ns
200ns
150ns
140ns
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WMS512K8-XXX 512Kx8, MONOLITHIC SRAM, SMD 5962-95613 FEATURES • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available ■ Evolutionary, Corner Power/Ground Pinout JEDEC Approved • 32 pin Ceramic DIP Package 300
|
Original
|
PDF
|
WMS512K8-XXX
512Kx8,
120ns
MIL-STD-883
A0-18
100ns
01HYX
|
A16 SMD
Abstract: SD10 SD13 SD14 SD15 WSF128K16-XXX
Text: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES Access Times of 35ns SRAM and 70ns (FLASH) Access Times of 70ns (SRAM) and 120ns (FLASH) Packaging TTL Compatible Inputs and Outputs Built-in Decoupling Caps and Multiple Ground Pins
|
Original
|
PDF
|
WSF128K16-XXX
128Kx16
120ns
WSF128K16-XHX
WSF128K16-H1X
WSF128K16-XG1UX1
WSF128K16-XG1TX
66-pin,
A16 SMD
SD10
SD13
SD14
SD15
WSF128K16-XXX
|
AH 45
Abstract: WSF128K16-XXX
Text: WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES n Access Times of 35ns SRAM and 70ns (FLASH) n Access Times of 70ns (SRAM) and 120ns (FLASH) n Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation n Weight • WSF128K16-XHX - 13 grams typical
|
Original
|
PDF
|
WSF128K16-XXX
128Kx16
120ns
WSF128K16-XHX
WSF128K16-H1X
WSF128K16-XG1UX
66-pin,
120ns
AH 45
WSF128K16-XXX
|
8 pin ceramic dip microsemi
Abstract: No abstract text available
Text: WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES Automatic Page Write Operation Read Access Times of 150, 200, 250, 300ns • Internal Address and Data Latches for JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package
|
Original
|
PDF
|
WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
300ns
MIL-STD-883
Typical/100mA
8 pin ceramic dip microsemi
|
|
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WMF512K8-XXX5 512Kx8 MONOLITHIC FLASH, SMD 5962-96692 FEATURES Access Times of 60, 70, 90, 120, 150ns Organized as 512Kx8 Packaging Commercial, Industrial and Military Temperature Ranges • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300
|
Original
|
PDF
|
WMF512K8-XXX5
512Kx8
150ns
512Kx8
|
WE512K8
Abstract: 128kx8 eeprom
Text: WE512K8, WE256K8, WE128K8-XCX White Electronic Designs 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FIGURE 1 FEATURES Read Access Times of 150, 200, 250, 300ns JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package 300
|
Original
|
PDF
|
WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
300ns
MIL-STD-883
Typical/100mA
WE512K8-300CQ
WE512K8
128kx8 eeprom
|
WMF512K8-XXX5
Abstract: WF512K32 application WF512K32-XXX5 WMF512K8-XCLX5
Text: WMF512K8-XXX5 HI-RELIABILITY PRODUCT 512Kx8 MONOLITHIC FLASH, SMD 5962-96692 FEATURES • Access Times of 70, 90, 120, 150ns ■ Organized as 512Kx8 ■ Packaging • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300 • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)
|
Original
|
PDF
|
WMF512K8-XXX5
512Kx8
150ns
512Kx8
64KByte
120ns
WMF512K8-XXX5
WF512K32 application
WF512K32-XXX5
WMF512K8-XCLX5
|
Untitled
Abstract: No abstract text available
Text: WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 FEATURES Access Times of 70, 85, 100, 120ns Low Power CMOS MIL-STD-883 Compliant Devices Available TTL Compatible Inputs and Outputs Packaging Built in Decoupling Caps and Multiple Ground Pins for Low
|
Original
|
PDF
|
WS128K32-XXX
128Kx32
120ns
MIL-STD-883
66-pin,
WS128K32-XG2UX
WS128K32-XH1X
WS128K32-XG4TX
512Kx32right
|
Untitled
Abstract: No abstract text available
Text: WMF512K8-XXX5 WHITE /M IC R O E L E C T R O N IC S 512 Kx 8 MONOLITHIC FLASH PRELIM IN ARY* FEATURES • Organized as 512Kx8 ■ Access Times of 70, 9 0 ,1 2 0 and 150nS ■ Com m ercial, Industrial and M ilitary Tem perature Ranges ■ Packaging • 32 pin, Hermetic Ceram ic, 0.600" DIP Package 300
|
OCR Scan
|
PDF
|
WMF512K8-XXX5
150nS
512Kx8
01HXX
03HXX
04HXX
01HYX
03HYX
|
Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX •lì Hi-R£LiASIÜTY PRODUCT 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES ■ Com m ercial, Industrial and M ilita ry Tem perature Ranges ■ Access Tim es o f 35ns SRAM and 70ns (FLASH) ■ TTL C om patible Inputs and O utputs ■ Access Tim es o f 70ns (SRAM) and 120ns (FLASH)
|
OCR Scan
|
PDF
|
WSF128K16-XXX
128Kx16
120ns
01HXX
01HYX
02HXX
02HYX
|
Untitled
Abstract: No abstract text available
Text: TT WHITE /M IC R O E LE C TR O N IC S 512Kx8 17151881 W MS512K8-XXX SRAM FEATURES • A c c e s s T im e s 70, 85, 100 and 120nS C o m m e r c ia l, In d u s tr ia l a nd M i l i t a r y T e m p e r a t u r e Range ■ M IL - S T D - 8 8 3 C o m p l ia n t D e v ic e s A v a i l a b l e ,
|
OCR Scan
|
PDF
|
MS512K8-XXX
512Kx8
120nS
03HXX*
04HXX*
120nS
10OnS
01HYX*
03HYX*
|
Untitled
Abstract: No abstract text available
Text: WME128K8-XXX WHITE /MICROELECTRONICS 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Tim es of 140,150, 200, 250, 300nS PIN CONFIGURATION ■ JEDEC Approved Packages 32 DIP 32 C S O J • 32 pin, Hermetic Ceramic, 0.600" DIP Package 300
|
OCR Scan
|
PDF
|
WME128K8-XXX
128Kx8
300nS
MIL-STD-883
Cycl250nS
128Kx
200nS
03HYX
150nS
|
Untitled
Abstract: No abstract text available
Text: TT WHITE /M ICRO ELECTRO N ICS WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, S M D 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN C O N FIG U R A T IO N T O P VIEW A18Ü 1 32 □ v cc A16 C 2 31 □ W E A15 C 3 30 □ A 17 A12Ü 4
|
OCR Scan
|
PDF
|
WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
300nS
Typical/100mA
150nS
WE512K8-150CQ
|
Untitled
Abstract: No abstract text available
Text: M/HITE /M ICRO ELEC TR O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SM D 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION TO P V IEW A18C 1 A 16 C 2 32 □ V « 31 □ w e A 15 C 3 30 □ A17 A 12 C 4 29 □ A14
|
OCR Scan
|
PDF
|
WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
300ns
WE512K8-150CQ
01HYX
|