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    Vishay Intertechnologies VQ1000P-E3

    Mosfet, 60V, 830Ma. Dip; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:830Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V; No. Of Pins:14Pins Rohs Compliant: Yes |Vishay VQ1000P-E3
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    Newark VQ1000P-E3 Bulk 15
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    SMC Corporation of America VVQ1000-P-1-C6

    Supply Spacer, VVQ1000 Series | SMC Corporation VVQ1000-P-1-C6
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    RS VVQ1000-P-1-C6 Bulk 1
    • 1 $60.74
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    SMC Corporation of America VVQ1000-P-4-C6

    Individual Supply Spacer, 4 Stations, VVQ1000 Series | SMC Corporation VVQ1000-P-4-C6
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    SMC Corporation of America VVQ1000-P-3-C6

    IND SUPPLY SPACER, VQ SERIES | SMC Corporation VVQ1000-P-3-C6
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    RS VVQ1000-P-3-C6 Bulk 5 Weeks 1
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    SMC Corporation of America VVQ1000-P-4-N7

    Individual Supply Spacer, VVQ1000 Series | SMC Corporation VVQ1000-P-4-N7
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    RS VVQ1000-P-4-N7 Bulk 1
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    Find more VQ1000P price and stock on Findchips.com

    VQ1000P Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VQ1000P Vishay Telefunken N-Channel 60-V (D-S) MOSFET Original PDF
    VQ1000P Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VQ1000P Unknown FET Data Book Scan PDF
    VQ1000P Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VQ1000P Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VQ1000P Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VQ1000P-2 Vishay Transistor Mosfet N-CH 60V 0.225A 14DIP Original PDF
    VQ1000P-E3 Vishay Transistor Mosfet N-CH 60V 0.225A 14DIP T/R Original PDF

    VQ1000P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    equivalent of BS170

    Abstract: 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capacitan02, equivalent of BS170 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING

    2N7000

    Abstract: BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J 08-Apr-05 2N7000 BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    2n7000 equivalent

    Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, 2n7000 equivalent VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P

    code for 2n7002

    Abstract: 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 BS170 VQ1000P SILICONIX 2N7002
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J O-226AA, BS170 code for 2n7002 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 VQ1000P SILICONIX 2N7002

    BS170

    Abstract: VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix
    Text: 2N7000/7002, VQ1000J/P, BS170 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J P-37993--Rev. BS170 VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix

    VQ1000J

    Abstract: 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, VQ1000J 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429

    VN45350T

    Abstract: VN0603T 2N7001 VN45350 vn4012B
    Text: H Siliconix incorporated N-CHANNEL V BR DS PART# (V) DS(ON) VGS(th) tON Ciss (V) (ns) (PF) ID (mA) PD (H) 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 30 30 10 10 10 10 10 10 38 38 35 35 16 16 35 35 0.85 0.85 0.46 0.46 0.23 0.23 0.40 0.40 2 2 2 2 2 2 2 2 3.0 3.0 2.5 2.5


    Original     		PDF 14-PIN VQ1001J VQ1001P VQ1004P VQ1004J VQ1000J VQ1000P VQ1006P VQ1006J OT-23 VN45350T VN0603T 2N7001 VN45350 vn4012B

    VQ1000

    Abstract: VQ1000P
    Text: VQ1000 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays B tSSSA 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1000J 60 VQ1000P •d (A) PACKAGE 5.5 0.225 Plastic 60 5.5 0.225 Sidebraze Performance Curves: VNDS06 'T ,l


    OCR Scan     		PDF VQ1000 VQ1000J VQ1000P 14-PIN VNDS06

    Untitled

    Abstract: No abstract text available
    Text: JB’SfSSfe VNDS06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • 2N7000, VN0610LL, VN2222LL Single TO-237 • VN2222LM Single SOT-23 • VN0605T, 2N7002 Quad 14-Pin Plastic • VQ1000J Quad 14-Pin Dual-ln-Line • VQ1000P Quad


    OCR Scan     		PDF VNDS06 2N7000, VN0610LL, VN2222LL VN2222LM VN0605T, 2N7002 VQ1000J VQ1000P O-226AA)

    2sk to-92

    Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A
    Text: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) *typ V g s (0) (V) *typ (A)


    OCR Scan     		PDF VNS009A O-204AA VNS009D O-220AB VNS012A O-204AE VQ1006P VQ2001J VQ2001P v02004j 2sk to-92 Siliconix v020 VNS013A VNT0080 VNT008A VNT009A

    VQ1000P

    Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VQ1000P VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J

    buz 350 equivalent

    Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
    Text: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25


    OCR Scan     		PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 buz 350 equivalent VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM

    VN0300M

    Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN0300M siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J

    2N6658

    Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m 2N6658 VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD

    2N7002 marking code 72

    Abstract: 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n (V ) rDS(on) Max (Q) V G S (th ) (V) b (A) 2N7000 5 @ V GS = 1 0V 0.8 to 3 0.2 2N7002 7,5 @ V QS= 10 V 1 to 2.5 0.115 5.5 @ V q 3 = 10 V


    OCR Scan     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000J VQ1000P BS170 S-04279-- 16-Jul-01 2N7002 marking code 72 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay

    hh 004 TO92

    Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m hh 004 TO92 VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L

    siliconix VN10KM

    Abstract: VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VN2406M


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m siliconix VN10KM VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE

    VN88AD

    Abstract: VN66AF 2N6658 VN89AF VN0808M VN88AO siliconix VN10KM VN46AF BSR67 VN89AD
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN88AD VN66AF 2N6658 VN89AF VN0808M VN88AO siliconix VN10KM VN46AF BSR67 VN89AD

    VN10KM equivalent

    Abstract: vn10km cross VN10LM "cross reference" siliconix VN10KM VN10lM equivalent VN0300M equivalent VN10KM ECS iss 400 VN10LE vn1710m
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= c P fi i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I I j j CO00 COCO j j ' I I I I OOOO ' ' I I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' '


    OCR Scan     		PDF ivn6100tnu to-39 ivn6200cnd to-220 vn0401d ivn6200cne t0-220 irf533 ivn6200cnf VN10KM equivalent vn10km cross VN10LM "cross reference" siliconix VN10KM VN10lM equivalent VN0300M equivalent VN10KM ECS iss 400 VN10LE vn1710m

    siliconix VN10KM

    Abstract: VN0300D VN0300M VP1001P VQ1001J VQ1001P VNMH03
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 •d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m siliconix VN10KM VN0300D VN0300M VP1001P VQ1001J VQ1001P VNMH03

    VN2410M

    Abstract: VN1210M siliconix VN10KM vn10le VN1710m BSR70 BSR72 BSR76 VN1210L VN1710L
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25 0.25 0.7 1.0 1.0 1.0


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN2410M VN1210M siliconix VN10KM vn10le VN1710m BSR70 BSR72 BSR76 VN1210L VN1710L

    IRF450 to-92

    Abstract: VN2406M siliconix VN10KM VN2410M IRF340 IRF350 IRF440 IRF450 VN1210L IRF820
    Text: Ü Ü A C D ^ U /C D M i v i a D r/\W i i v i v ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING Packages: I BV qss Volts 45 0-500 TO-3 TO-220 S ilic o n ix


    OCR Scan     		PDF to-220 to-39 to-237 to-92 to-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF450 to-92 VN2406M siliconix VN10KM VN2410M IRF340 IRF350 VN1210L IRF820

    siliconix VN10KM

    Abstract: VQ1001J VQ1001P
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) • d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m siliconix VN10KM VQ1001J VQ1001P