VQ1004J Search Results

2N6660

Abstract: s0437 2N6660 siliconix VQ1004J
Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5

1004J

Abstract: 2N6659 M 1004j
Contextual Info: Tem ic 2N6659/2N6660, VQ1004J/P_ suimnix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber V BR DSS M in (V) rDS(on) M ax (Q) v GS(th) (V) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ V(-js = 10 V 0.8 to 2 1.1

sis 962

Contextual Info: VQ1004 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVdss/ BV ogs 60V Order Number / Package •D ON n DS(ON) (max) 3.5Q (min) Quad Ceramic DIP* 1.5A VQ1004P Quad Plastic DIP VQ1004J * 14 pin side b ra zed ceram ic D IP

VN46AFD

Abstract: 6178 vn0606m
Contextual Info: VNDQ06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-39 TO-205AD • 2N6659, 2N6660 Single TO-220SD • VN46AFD, AN66AFD Single TO-237 • VN0606M Single TO-92 (TO-226AA) • TN0601L Quad 14-Pin Plastic • VQ1004J, TQ1004J Quad 14-Pin Dual-ln-Line

Contextual Info: S u p ertex ¡ne. Æ ï vE/ VQ1004 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Num ber / Package BVoss / R d S ON) ' d (ON) b v dgs (max) (min) Quad Plastic DIP 60V 3.5Q 1.5AV VQ1004J Features Advanced DMOS Technology

2N6659

Abstract: 2N6660 VQ1004J VQ1004P
Contextual Info: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660

2N6660

Abstract: s4 vishay VQ1004J VQ1004P
Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N6660 rDS(on) Max (W) 60 VQ1004J/P VGS(th) (V) ID (A) 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 FEATURES BENEFITS

2N6660

Abstract: 2N6660 siliconix 2N6659 VQ1004J VQ1004P
Contextual Info: 2N6659/2N6660, VQ1004J/P Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ VGS = 10 V 0.8 to 2 1.1 VQ1004J/P 60 3.5 @ VGS = 10 V

2N6660

Abstract: VQ1004J VQ1004P
Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N6660 rDS(on) Max (W) 60 VQ1004J/P VGS(th) (V) ID (A) 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 FEATURES BENEFITS

2N6659

Abstract: 2N6660 VQ1004J VQ1004P
Contextual Info: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 2N6660

2N6660 siliconix

Abstract: s4 vishay 2N6660 VQ1004J VQ1004P 7022
Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) 2N6660 60 VQ1004J/P rDS(on) Max (W) VGS(th) (V) ID (A) 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 FEATURES BENEFITS

MOSFET 2n6659

Abstract: 2N6660 SILICONIX
Contextual Info: 2N6659/2N6660, VQ1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS 2N6659 Min (V) 2N 6660 60 VQiOOU/P Max (Q) V GS(th) (V ) Id (A) 1.8 @ V Gs = 10 V 0.8 to 2 1.4 3 @ V GS= 10 V 0.8 to 2 1.1 3.5 @ V GS= 10 V 0.8 to 2.5

2N6660

Abstract: 2N6660 siliconix VQ1004J VQ1004P marking code vishay SILICONIX to-39
Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N6660 rDS(on) Max (W) 60 VQ1004J/P VGS(th) (V) ID (A) 3 @ VGS = 10 V 0.8 to 2 1.1 3.5 @ VGS = 10 V 0.8 to 2.5 0.46 FEATURES BENEFITS

FAST DMOS FET Switches n-CHANNEL

Abstract: VQ1004P VQ1004 VQ1004J
Contextual Info: VQ1004 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) Quad Ceramic DIP* 60V 3.5Ω 1.5A VQ1004P Quad Plastic DIP VQ1004J * 14 pin side brazed ceramic DIP Advanced DMOS Technology

Low Input Capacitance MOS FET

Abstract: VQ1004 VQ1004J
Contextual Info: VQ1004 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 60V 3.5Ω 1.5AV VQ1004J Quad Plastic DIP Features Advanced DMOS Technology • Free from secondary breakdown

d2q transistor

Contextual Info: V Q 10 04 LJ S u p ertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Standard Commercial Devices BV dss / ^DS ON) Order Number / Package I d (ON) B V qcs (max) (min) Quad Ceramic DIP' 60V 3.5Ì2 1.5A VQ1004P Quad Plastic DIP

2N6660 JANTX

Contextual Info: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS

VQ1000P

Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25

buz 350 equivalent

Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
Contextual Info: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25

VN0300M

Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25

VN2410L equivalent

Abstract: VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r 's ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I I I OOOO ' ' I

2N6658

Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
Contextual Info: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0

Contextual Info: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP