VARIABLE GAIN AMPLIFIERS FREESCALE Search Results

VARIABLE GAIN AMPLIFIERS FREESCALE Result Highlights (5)

Part	Manufacturer	Description
CLC522A/B2A	Rochester Electronics LLC	CLC522 - Wideband Amplifier, Variable-Gain - Dual marked (5962-9451701M2A)
CLC522A/BCA	Rochester Electronics LLC	CLC522 - Wideband Amplifier, Variable-Gain - Dual marked (5962-9451701MCA)
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
LM108H	Rochester Electronics LLC	LM108 - Super Gain Op Amp
LM108AL	Rochester Electronics LLC	LM108 - Super Gain Op Amp

VARIABLE GAIN AMPLIFIERS FREESCALE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MCM20128 Abstract: CMOS global shutter cmos IMAGE SENSOR global shutter cmos image sensor motorola CMOS digital image sensor with global shutter ccd IMAGE SENSOR global shutter CMOS image sensor with global shutter global shutter image sensor true global shutter global shutter Text: Freescale Semiconductor, Inc. Fact Sheet MCM20128 Freescale Semiconductor, Inc. SXGA 1280 X 1024 PIXELS CMOS DIGITAL IMAGE SENSOR OVERVIEW The MCM20128 is a fully integrated, high-performance complementary metal oxide semiconductor (CMOS) image sensor. Its features include integrated timing,	Original	MCM20128 MCM20128 48-pin 10-bit MCM20128FACT/D CMOS global shutter cmos IMAGE SENSOR global shutter cmos image sensor motorola CMOS digital image sensor with global shutter ccd IMAGE SENSOR global shutter CMOS image sensor with global shutter global shutter image sensor true global shutter global shutter	PDF
PRBS-9 Abstract: MC1319x MC1320x MC1321X 13192-SARD 802154MPSRM AN3231 HCS08 MC9S08QE128 c programming hcs08 Text: Simple Media Access Controller SMAC User’s Guide Document Number: SMACRM Rev. 1.5 03/2008 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370	Original	CH370 MC13192 PRBS-9 MC1319x MC1320x MC1321X 13192-SARD 802154MPSRM AN3231 HCS08 MC9S08QE128 c programming hcs08	PDF
200w power amplifier circuit diagram Abstract: AN1385 LDMOS digital ISL21400 MRF9080 Text: LDMOS Transistor Bias Control in Basestation RF Power Amplifiers Using Intersil’s ISL21400 Application Note February 27, 2007 Introduction AN1385.0 The ISL21400 Programmable Output Temperature Sensor IC LDMOS transistors are used for RF Power Amplification in	Original	ISL21400 AN1385 ISL21400 200w power amplifier circuit diagram LDMOS digital MRF9080	PDF
biosensor Abstract: abstract on biomedical instruments photo glucose tod meter circuit diagram biosensor ,impedance 0b111 circuit diagram glucose meter Text: Freescale Semiconductor Quick Reference User Guide Abstract Document Number: ANPERIPHQRUG Rev. 0, 07/2010 Quick Reference User Guide for Analog Peripherals on the MM and JE Family by: Alejandra Guzman, Wang Hao, Han Lin, Carlos Neri, Medina Rimoldi Cuauhtemoc	Original	16-bit 12-bit biosensor abstract on biomedical instruments photo glucose tod meter circuit diagram biosensor ,impedance 0b111 circuit diagram glucose meter	PDF
250GX-0300-55-22 Abstract: MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114 MRF6VP121KHR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 2, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed	Original	MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed	Original	MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6	PDF
Untitled Abstract: No abstract text available Text: Document Number: MMRF1015N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1015NR1 MMRF1015GNR1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and	Original	MMRF1015N MMRF1015NR1 MMRF1015GNR1 MMRF1015NR1	PDF
GaAs MESFET amplifier with high input impedance Abstract: mesfet datasheet by motorola DCS1800 GSM900 MMM5062 PCS1900 Text: Fact Sheet Freescale Semiconductor, Inc. MMM5062 QUAD-BAND, SINGLE POWER SUPPLY, POWER AMPLIFIER MODULE Freescale Semiconductor, Inc. For GSM/GPRS Handsets The MMM5062 is a Quad-Band, Single Power Supply, Power Amplifier Module for use in GSM/GPRS cellular	Original	MMM5062 MMM5062 50-ohm GSM850ed MMM5062FACT/D GaAs MESFET amplifier with high input impedance mesfet datasheet by motorola DCS1800 GSM900 PCS1900	PDF
330 j73 Tantalum Capacitor Abstract: 600S1 J162 600S100 100B4R7 Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest	Original	MW4IC001MR4 MW4IC001 MW4IC001NR4 MW4IC001MR4 330 j73 Tantalum Capacitor 600S1 J162 600S100 100B4R7	PDF
J327 Abstract: 726 j68 j139 Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest	Original	MW4IC001MR4 MW4IC001 MW4IC001NR4 MW4IC001MR4 J327 726 j68 j139	PDF
330 j73 Tantalum Capacitor Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1 Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest	Original	MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9045N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this	Original	MRFE6S9045N MRFE6S9045NR1	PDF
audio compressor expander IC Abstract: compressor IC walkie-talkie 100k variable resistor round body 14 pin ic recorder voice voice activated recorder circuit MC33111 MC33111D MC33111P MC78L05ACP Text: Freescale Semiconductor, Inc. Order this data sheet by MC33111/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC33111 Advance Information Low Voltage Compander LOW VOLTAGE COMPANDER SILICON MONOLITHIC INTEGRATED CIRCUIT ARCHIVE INFORMATION Freescale Semiconductor, Inc.	Original	MC33111/D MC33111 MC33111 MC33111/D* audio compressor expander IC compressor IC walkie-talkie 100k variable resistor round body 14 pin ic recorder voice voice activated recorder circuit MC33111D MC33111P MC78L05ACP	PDF
MRF9030N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts	Original	MRF9030N MRF9030NBR1 MRF9030N	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 6, 4/2012 RF Power Field Effect Transistors MRF6VP41KHR6 MRF6VP41KHSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to	Original	MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 MRF6VP41KHR6	PDF
EEEFK1H101P Abstract: A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF6P18190H MRF6P18190HR6 EEEFK1H101P A114 A115 AN1955 C101 JESD22 MRF6P18190HR6	PDF
ATC100B5R6CT500XT Abstract: ATC100B9R1CT500XT ATC100B241JT200XT MRF6VP41KH MRF6VP41KHR6 NIPPON CAPACITORS UT-141C-25 AN1955 MRF6VP41KHSR6 2225X7R225KT3AB Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 5, 4/2010 RF Power Field Effect Transistors MRF6VP41KHR6 MRF6VP41KHSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to	Original	MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 MRF6VP41KHR6 ATC100B5R6CT500XT ATC100B9R1CT500XT ATC100B241JT200XT MRF6VP41KH NIPPON CAPACITORS UT-141C-25 AN1955 MRF6VP41KHSR6 2225X7R225KT3AB	PDF
NIPPON CAPACITORS Abstract: capacitor mttf 100B120JP 100B180JP Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with	Original	MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 NIPPON CAPACITORS capacitor mttf 100B120JP 100B180JP	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9130H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier	Original	MRFE6S9130H MRFE6S9130HR3 MRFE6S9130HSR3	PDF
ATC100B470 Abstract: ESME630E MRFE6S9130HR3 A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRFE6S9130HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9130H Rev. 0, 4/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9130HR3 MRFE6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRFE6S9130H MRFE6S9130HR3 MRFE6S9130HSR3 MRFE6S9130HR3 ATC100B470 ESME630E A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRFE6S9130HSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 5, 8/2008 MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRF6S9130H MRF6S9130HR3/HSR3 MRFE6S9130HR3/HSR3. PCN12895 MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier	Original	MRFE6S9160H MRFE6S9160HR3 MRFE6S9160HSR3	PDF
MRF5S9070NR Abstract: No abstract text available Text: Document Number: MRF5S9070NR1 Rev. 7, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF5S9070NR1 MRF5S9070NR	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 3, 12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 1805	Original	MRF6P18190H MRF6P18190HR6	PDF

VARIABLE GAIN AMPLIFIERS FREESCALE Search Results

VARIABLE GAIN AMPLIFIERS FREESCALE Result Highlights (5)

VARIABLE GAIN AMPLIFIERS FREESCALE Datasheets Context Search

MCM20128

PRBS-9

200w power amplifier circuit diagram

biosensor

250GX-0300-55-22

Untitled

Untitled

GaAs MESFET amplifier with high input impedance

330 j73 Tantalum Capacitor

J327

330 j73 Tantalum Capacitor

Untitled

audio compressor expander IC

MRF9030N

Untitled

EEEFK1H101P

ATC100B5R6CT500XT

NIPPON CAPACITORS

Untitled

ATC100B470

Untitled

Untitled

MRF5S9070NR

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