ATC100B5R6CT500XT Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21100H Rev. 1, 3/2011 RF Power Field Effect Transistors MRF8S21100HR3 MRF8S21100HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

Contextual Info: Document Number: MW7IC915N Rev. 1, 12/2009 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage struc-

81c1000

Abstract: ATC100B241JT200XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

MRF8P9040N

Abstract: mrf8p ATC100B820JT RO4350B
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

MRF6V10010NR4

Abstract: AN1955 d2460 A03TK
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

2508051107Y0

Abstract: NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 2, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.

250GX-0300-55-22

Abstract: AN1955 JESD22-A114 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 j686 CRC120610R0FKEA Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to

EEEFK1H101P

Abstract: A114 A115 AN1955 C101 JESD22 MRF6P18190HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 4, 12/2010 RF Power Field Effect Transistors MRF5S21100HR3 MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

2225x7r225kt3ab

Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,

MRF8S21100HS

Abstract: MRF8S21100H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21100H Rev. 1, 3/2011 RF Power Field Effect Transistors MRF8S21100HR3 MRF8S21100HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

k 2645 MOSFET

Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

j821

Abstract: MRF8S26060H C5750JF1H226ZT AN1955 JESD22-A114 C5750X7R1H106 465I-02 MRF8S26060HR MRF8S26060HS
Contextual Info: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to

GRM55DR61H106KA88B

Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

Contextual Info: Document Number: MRF6P18190H Rev. 3, 12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 3, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.

Contextual Info: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for