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Kyocera AVX Components 100B120JP500XTV1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B120JP500XTV1K)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B120JP500XTV1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 $3.8608 10000 $3.496	Buy Now
Mouser Electronics	100B120JP500XTV1K					1 - 10 - 100 - 1000 $3.86 10000 $3.86	Get Quote
Kyocera AVX Components 100B120JPN500XC100 MLC A/B/R - Waffle Pack (Alt: 100B120JPN500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B120JPN500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 $4.0259 1000 $3.6455 10000 $3.6455	Buy Now
Mouser Electronics	100B120JPN500XC100					1 $8.48 10 $5.88 100 $4.52 1000 $4.26 10000 $4.26	Get Quote
Kyocera AVX Components 100B120JP500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B120JP500XT1K)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B120JP500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 $3.8608 10000 $3.496	Buy Now
Mouser Electronics	100B120JP500XT1K					1 - 10 - 100 - 1000 $3.86 10000 $3.86	Get Quote
Kyocera AVX Components 100B120JP500XC100 MLC A/B/R - Waffle Pack (Alt: 100B120JP500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B120JP500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 $3.8608 1000 $3.496 10000 $3.496	Buy Now
Mouser Electronics	100B120JP500XC100					1 $8.24 10 $5.7 100 $4.56 1000 $4.42 10000 $4.42	Get Quote
Richardson RFPD	100B120JP500XC100				100	1 - 10 - 100 $3.45 1000 $3.11 10000 $2.75	Buy Now
Kyocera AVX Components 100B120JP500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B120JP500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B120JP500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 $3.7696 10000 $3.496	Buy Now
Mouser Electronics	100B120JP500XT					1 - 10 - 100 - 1000 $4.12 10000 $4.12	Get Quote
Richardson RFPD	100B120JP500XT				500	1 - 10 - 100 - 1000 $3.11 10000 $2.75	Buy Now

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100B120JP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B120JP500X		Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifier		Original	PDF

100B120JP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier	Original	MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3	PDF
330 j73 Tantalum Capacitor Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1 Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest	Original	MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF6S9045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 MRF6S9045MR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130H	PDF
8587 Abstract: 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X C1210C104K5RACTR MW4IC001MR4 RO4350 T491X226K035AS Text: MOTOROLA Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Motorola’s	Original	MW4IC001MR4/D MW4IC001MR4 MW4IC001MR4 8587 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X C1210C104K5RACTR RO4350 T491X226K035AS	PDF
93F2975 Abstract: marking 865 amplifier 100B120JP 865 marking amplifier Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9135LR3 MRF9135LSR3 93F2975 marking 865 amplifier 100B120JP 865 marking amplifier	PDF
NIPPON CAPACITORS Abstract: capacitor mttf 100B120JP 100B180JP Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with	Original	MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 NIPPON CAPACITORS capacitor mttf 100B120JP 100B180JP	PDF
MRF6S9045MR1 Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 2, 5/2006 Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1	PDF
KME63VB471M12x25LL Abstract: transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 MRF5S9150HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.	Original	MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150HR3 KME63VB471M12x25LL transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HSR3	PDF
UHF TRANSISTOR Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V	Original	HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet	PDF
MRF9135LSR3 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9135L Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9135L MRF9135LR3 MRF9135LSR3 MRF9135LSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 7, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9135L MRF9135LR3 MRF9135LSR3 MRF9135L	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130H	PDF
KME63VB Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 0, 10/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160H KME63VB	PDF

Untitled Abstract: No abstract text available Text: Document Number: MRF5S9100 Rev. 4, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9100NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S9100 MRF5S9100NR1/NBR1. MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100MR1	PDF
hatching machine Abstract: NIPPON CAPACITORS A113 AN1955 MRF5S9100MBR1 MRF5S9100MR1 MRF5S9100NBR1 MRF5S9100NR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9100NR1 RF Power Field Effect Transistors MRF5S9100NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100MR1	Original	MRF5S9100/D MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 hatching machine NIPPON CAPACITORS A113 AN1955 MRF5S9100MBR1	PDF
MRF5S9150HSR3 Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869	Original	MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150HR3 MRF5S9150HSR3 A114 A115 AN1955 C101 JESD22	PDF
variable resistor 500 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest	Original	MW4IC001 MW4IC001NR4 MW4IC001MR4 variable resistor 500	PDF
567 tone Abstract: marking us capacitor pf l1 marking Z4 100B120JP500X 100B2R7CP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR MW4IC001MR4 Text: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 4, 5/2006 Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MW4IC001MR4	Original	MW4IC001MR4 MW4IC001NR4. MW4IC001M MW4IC001MR4 567 tone marking us capacitor pf l1 marking Z4 100B120JP500X 100B2R7CP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR	PDF
hatching machine Abstract: NIPPON CAPACITORS AVG26 100B180JP MARKING WB1 A114 A115 AN1955 C101 MRF5S9100 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9100 Rev. 3, 7/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with	Original	MRF5S9100 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 hatching machine NIPPON CAPACITORS AVG26 100B180JP MARKING WB1 A114 A115 AN1955 C101 MRF5S9100	PDF
NIPPON CAPACITORS Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S9100NBR1 MRF5S9100NR1 ACPR25 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100NR1 MRF5S9100NBR1 Designed for broadband commercial and industrial applications with	Original	MRF5S9100N MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100NR1 NIPPON CAPACITORS A113 A114 A115 AN1955 C101 JESD22 MRF5S9100NBR1 ACPR25	PDF
MRF9135 Abstract: MRF9135L MRF9135LR3 MRF9135LSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 7, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9135L MRF9135LR3 MRF9135LSR3 MRF9135 MRF9135L MRF9135LSR3	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3 A114 A115 AN1955 C101 JESD22 MRF6S9130H MRF6S9130HSR3	PDF
Untitled Abstract: No abstract text available Text: MW4IC001MR4 Rev. 4, 5/2006 Freescale Semiconductor Technical Data Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MW4IC001MR4	Original	MW4IC001MR4 MW4IC001NR4. MW4IC001M MW4IC001MR4	PDF

100B120JP Search Results

100B120JP Price and Stock

Kyocera AVX Components 100B120JP500XTV1K

Kyocera AVX Components 100B120JPN500XC100

Kyocera AVX Components 100B120JP500XT1K

Kyocera AVX Components 100B120JP500XC100

Kyocera AVX Components 100B120JP500XT

100B120JP Datasheets (1)

100B120JP Datasheets Context Search

Untitled

330 j73 Tantalum Capacitor

Untitled

Untitled

8587

93F2975

NIPPON CAPACITORS

MRF6S9045MR1

KME63VB471M12x25LL

UHF TRANSISTOR

MRF9135LSR3

Untitled

Untitled

KME63VB

Untitled

hatching machine

MRF5S9150HSR3

variable resistor 500

567 tone

hatching machine

NIPPON CAPACITORS

MRF9135

A114

Untitled