600S1 Search Results

SOF-26

Abstract: SZP-3026Z
Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with

Contextual Info: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

Contextual Info: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

NE552R479A

Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency
Contextual Info: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.

Contextual Info: ANALOG DEVICES □ FEATURES Complete, Fully-Calibrated Synthesis System All Standard Functions: Sin, Cos, Tan, Cosec, Sec, Cot, Arcsin, Arccos, Arctan, etc. Accurate Law Conformance Sine to 0.02% Angular Range of ±500° (Sine Mode) Function Programmable by Pin Strapping

mch215f104zp

Abstract: J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk
Contextual Info: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V 1.5 ± 0.2 4.2 Source • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz

tantulum capacitor

Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance

330 j73 Tantalum Capacitor

Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1
Contextual Info: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest

Contextual Info: Document Number: MW5IC2030N Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage

IGBT FZ 800

Abstract: IGBT FZ 1200 IGBT FZ 1000 FZ 5.1 FZ 800 R 12 KF6
Contextual Info: V ces V O T ype ICRM VcEsat ton ts tf RthJC Tvj max > IGBT High Power Modules A V MS Tvj=25°C MS TVj=25°C ° c /w °c Tvj=25°C MS Tvj=25°C typ. typ. typ. typ. 0,0570 0,0460 150 150 ; 1H9 0,90 0,25 0,15 ! ÌH2 0,09 0,15 0,15 0,13 0,20 0,20 0,15 0,09 0,15

600S3R9AT

Contextual Info: Freescale Semiconductor Technical Data MW5IC2030M Rev. 4, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS

Aeroflex ATC 600

Abstract: ATSC MSWSHB-020-30 RO4350B DVB-T Schematic MEST2G-020-15 mswsh-100-30 wifi antenna MSWSS-020-40 600S200JW
Contextual Info: Application Note AN55131B Design of LOW COST High Performance 20W and 50W Transmit and Receive Antenna Switches DESCRIPTION Figure 1. This paper describes a 20 W SPDT switch for use in 500 MHz to 4 GHz wireless infrastructure applications such as cellular GSM, CDMA, 3G and

TS9241

Abstract: TS924 vip 504 TS924A TS924I VOFN1314 60Oil sgs thomson
Contextual Info: 7 7 SGS-THOMSON k7 M, R ilD(g[S@i[L[l(§TnM R!lD(g@ TS 924 RAIL TO RAIL HIGH OUTPUT CURRENT QUAD OPERATIONAL AMPLIFIER • ■ ■ ■ RAIL TO RAIL INPUT AND OUTPUT LOW NOISE : 9nV/VHF LOW DISTORTION HIGH OUTPUT CURRENT : 80mA (able to drive 32.Q loads) ■ HIG H SPEED : 4M H z1.3V/|iS

TSH94

Abstract: TSH94I sgs thomson
Contextual Info: « k7 A SGS-THOMSON « G e t m it ^ D iÄ D T S H 94 HIGH SPEED LOW POWER QUAD OPERATIONAL AMPLIFIER WITH STANDBY POSITION • 2 SEPARATESTANDBY : REDUCED CONSUMPTION AND HIGH IMPEDANCE OUTPUTS ■ LOW SUPPLY CURRENT : 4.5mA/amp. typ ■ HIG H SPEED : 150M H z- 110V/|iS

8587

Abstract: 100B120JP500X 100B2R7CP500X 100B3R3CP500X 100B430JP500X 100B4R7CP500X C1210C104K5RACTR MW4IC001MR4 RO4350 T491X226K035AS
Contextual Info: MOTOROLA Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Motorola’s

DCS1800

Abstract: NE5520279A NE5520279A-T1
Contextual Info: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V 0.8±0.15

P 1504 EDG

Abstract: GRM422Y5V106Z050AL PTMA180402 12 pF ceramic capacitor INFINEON 20PIN c20vd2
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband, 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

2170S

Contextual Info: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description PTMA210452EL Package H-33265-8 The PTMA210452EL and PTMA210452FL are matched, wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in

RX2 bri 01

Contextual Info: W MOTOROLA MC34016 Cordless Universal Telephone Interface The MC34016 is a telephone line Interface meant for use in cordless telephone base stations for CTO, CT1, CT2 and DECT. The circuit forms the interface towards the telephone line and performs all speech and line

02140-EVMD-001-B

Abstract: 32K243-40ME3 Rosenberger 32K243-40ME3 600s101 rogers 4003 characteristics rogers 4003 SDC1-014 32K243 preset resistor 10k 3pin ROSENBERGER
Contextual Info: M02140 Evaluation Module User Guide 02140-EVMD-001-B June 2004 Revision History Revision Level Date Description B Final 06/25/2004 Update LOS Resistor Values A Final 06/25/2002 Initial Release 2004, Mindspeed TechnologiesTM, Inc. All rights reserved. Information in this document is provided in connection with Mindspeed TechnologiesTM "MindspeedTM" products. These

AGRC10GM

Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz
Contextual Info: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor

GRM422Y5V106Z050AL

Abstract: PTMA180402M RO4350
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2100 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

GRM422Y5V106Z050AL

Abstract: PTMA210452EL PTMA210452FL RO4350
Contextual Info: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description PTMA210452EL Package H-33265-8 The PTMA210452EL and PTMA210452FL are wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical

Contextual Info: TGF3020-SM 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Functional Block Diagram Product Features • • • • • •