C2004A
Abstract: KM48C2104A C2104A C2104 km48v2104a
Text: KM48C2004A, KM48C2104A KM48V2004A, V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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KM48C2004A,
KM48C2104A
KM48V2004A,
KM48V2104A
b4142
C2004A
KM48C2104A
C2104A
C2104
km48v2104a
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v2308
Abstract: EP1014 V2205
Text: TABLE OF CONTENTS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance SLIGHT HYPERABRUPT AB R U PT Page No. 1 N 9 5 1 - 1 N 9 5 6 . 1N4786 -1 N 4 8 1 5 A , B .
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1N4786
1N5139
1485A
1N5441A
1N5461A
1N5461
1N5710A
V1652
V1720
SQ131
v2308
EP1014
V2205
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FMMV105G
Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications
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10/iA
ZC2800
ZC2811
ZC5800
ZC2800-ZC5800
ZC2811
OT-23
ZC2800E
rZC2810E
ZC2811E
FMMV105G
fmmv2109
ZC820
ZC821
ZC822
ZC823
ZC824
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Untitled
Abstract: No abstract text available
Text: KM48C2004BK CMOS D R A M ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM48C2004BK
16Mx4,
512Kx8)
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PDF
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Untitled
Abstract: No abstract text available
Text: K M 4 8 C 2 10 4 B K CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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16Mx4,
512Kx8)
KM48C2104BK)
KM48C2104BK
7ib414E
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PDF
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V2101
Abstract: diode mv2105 SOT23 package diodes MV2105* equivalent
Text: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical
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MMBV2101LT1/D
OT-23
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101
V2104
V2101
diode mv2105
SOT23 package diodes
MV2105* equivalent
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PDF
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V2103
Abstract: V2109 V2105
Text: PLESSEY SEP1IC0ND/DISCRETE ~ 03 ÔF§7BB 0S3 3 OOObSTT 4 T -o 7 ~ t? Silicon variable capacitance F M M V 2 1 0 1 -F M M V 2 1 0 9 A B S O L U T E M A X IM U M R A T IN G S Value Unit Parameter Sym bol Reverse voltage Vr 30 V Forward current If 20 mA C H A R A C T E R IS T IC S at Tamb = 25°C .
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V2102
V2103
V2104
V2105
V2106
V2108
V2109
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A10CE
Abstract: OYNN KM48C2104B km4e KM48V2104B
Text: KM48C2004B, KM48C2104B KM48V2004B, V2104B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fa m ily of 2,097,152 x 8 bit Extended Data Out CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Power
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KM48C2004B,
KM48C2104B
KM48V2004B,
KM48V2104B
A10CE
OYNN
km4e
KM48V2104B
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PDF
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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PDF
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27TfC
1N5438
tfc 5630
2N5161
germanium
2N4193
1N1319
A2023 transistor
2N217
1N5159
transistor bf 175
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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PDF
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Untitled
Abstract: No abstract text available
Text: KM48C2004A, KM48C2104A KM48V2004A, V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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OCR Scan
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KM48C2004A,
KM48C2104A
KM48V2004A,
KM48V2104A
002D323
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PDF
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Untitled
Abstract: No abstract text available
Text: K M 4 8 C 2 10 4 B S CMOS D R A M ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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16Mx4,
512Kx8)
KM48C2104BS
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PDF
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ZC2800E
Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
Text: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz
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OT-23
ZC2800E
ZC2810E
ZC2811E
ZC5800E
ZC2810E)
Ir-10mA
BAS70-05
BAS70-06
ZC2800-ZC5800
ZC830A
ZC831A
ZC832A
ZC833A
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PDF
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KM48V2104b
Abstract: No abstract text available
Text: KM48V2004BK CMOS DRAM ELECTR O NICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM48V2004BK
512Kx8)
48V2004BK
003SS7D
KM48V2104b
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PDF
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Untitled
Abstract: No abstract text available
Text: FMMV2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION PARTMARKING DETAIL: FMMV2101 - 6R FMMV2102 - 6F FMMV2103 - 6G V2104 - 6H FMMV2105 - 6J FMMV2106 - 6K FMMV2107 - 6L FMMV2108 - 6M FMMV2109 - 6N 1 1 T ABSOLUTE MAXIMUM RATINGS
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FMMV2101
FMMV2109
FMMV2101
FMMV2102
FMMV2103
FMMV2104
FMMV2105
FMMV2106
FMMV2107
FMMV2108
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PDF
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Untitled
Abstract: No abstract text available
Text: RapID Platform - ModbusTCP Network Interface 2-Port Connectivity Solution The RapID Platform Network Interface is a pre-tested module that manages the industrial protocol and network traffic with a single host processor interface The interface contains everything needed including the
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Original
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V2004
V2104
V0004
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PDF
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varactor 36z
Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r
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OCR Scan
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Z1000
MZ4614
MZ4627
1N4099
M4L3052
M4L3056
1N5158
varactor 36z
germanium
halbleiter index transistor
Halbleiter Buch
2n5347
2n3054
working of reactance modulator
JE2955
germanium transistor
2N3902
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PDF
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C2004C
Abstract: No abstract text available
Text: KM48C2004C, KM48C2104C KM48V2004C, V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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Original
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KM48C2004C,
KM48C2104C
KM48V2004C,
KM48V2104C
ad04C,
300mil
C2004C
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PDF
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Untitled
Abstract: No abstract text available
Text: KM48C2004BS CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM48C2004BS
512Kx8)
KM48C2004B
|
PDF
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Untitled
Abstract: No abstract text available
Text: KM48C2004C, KM48C2104C KM48V2004C, V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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OCR Scan
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KM48C2004C,
KM48C2104C
KM48V2004C,
KM48V2104C
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PDF
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KM48V2104B
Abstract: No abstract text available
Text: KM48V2004BS CMOS DRAM ELECTR O NICS 2 M x 8 Bit C M O S Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM48V2004BS
16Mx4,
512Kx8)
KM48V2104B
|
PDF
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MMBV2107LT1
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical
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OCR Scan
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MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101
V2104
V2105
V2108
|
PDF
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MV2107
Abstract: BV2108 MV2113 BV-2108
Text: MOTOROLA SEMICONDUCTOR MMBV2101L thru MMBV2109L MV2101 thru MV2115 TECHNICAL DATA W V O L T A G E -V A R IA B L E C A PA C ITA N C E D IO D ES C 6.8-100 pF 30 VOLTS SILIC O N EPIC A P D IO D ES % C A S E 318-07 TO-236AB SOT-23 MMBV2101L thru MMBV2109L C A SE 182-02
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OCR Scan
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MMBV2101L
MMBV2109L
MV2101
MV2115
O-236AB
OT-23
MMBV2109L
MV2107
BV2108
MV2113
BV-2108
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PDF
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