km48c2104bk
Abstract: No abstract text available
Text: DRAM MODULE KMM372E213BK/BS KMM372E213BK/BS Fast Page with EDO Mode 2Mx72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E213B is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E213B consists of nine CMOS 2Mx8bits DRAMs in SOJ/TSOP-II
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KMM372E213BK/BS
KMM372E213BK/BS
2Mx72
KMM372E213B
2Mx72bits
KMM372E213B
300mil
16bits
48pin
168-pin
km48c2104bk
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km48c2104bk
Abstract: KM48C2104 KMM364E213BK
Text: DRAM MODULE KMM364E213BK/BS KMM364E213BK/BS Fast Page with EDO Mode 2M x 64 DRAM DIMM using 2Mx8, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E213B is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E213B consists of eight CMOS 2Mx8bits DRAMs in SOJ/TSOP-II
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KMM364E213BK/BS
KMM364E213BK/BS
KMM364E213B
2Mx64bits
KMM364E213B
300mil
16bits
48pin
168-pin
km48c2104bk
KM48C2104
KMM364E213BK
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A10CE
Abstract: OYNN KM48C2104B km4e KM48V2104B
Text: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fa m ily of 2,097,152 x 8 bit Extended Data Out CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Power
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KM48C2004B,
KM48C2104B
KM48V2004B,
KM48V2104B
A10CE
OYNN
km4e
KM48V2104B
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KM48C2104B
Abstract: No abstract text available
Text: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2 M x 8 Bit C M O S Dynamic R A M with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data O ut CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin th e sam e row, so called H yper P age M ode. Power
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KM48C2004B,
KM48C2104B
KM48V2004B,
KM48V2104B
KM48C2104B
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Untitled
Abstract: No abstract text available
Text: KM48C2004BK CMOS D R A M ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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PDF
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KM48C2004BK
16Mx4,
512Kx8)
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Untitled
Abstract: No abstract text available
Text: K M 4 8 C 2 10 4 B K CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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PDF
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16Mx4,
512Kx8)
KM48C2104BK)
KM48C2104BK
7ib414E
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364E213BK/BS KMM364E213BK/BS Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V G ENERAL DESCRIPTION FEATURES The Samsung KMM364E213B is a 2M bit x 64 Dynamic RAM high density memory module. The • Part Identification Samsung KMM364E213B consists of eight CMOS
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KMM364E213BK/BS
KMM364E213BK/BS
2Mx64
KMM364E213B
KMM364E213BS
cycles/32ms
1000mil)
KMM364E213BK
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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Untitled
Abstract: No abstract text available
Text: K M 4 8 C 2 10 4 B S CMOS D R A M ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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16Mx4,
512Kx8)
KM48C2104BS
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KM48V2104B
Abstract: KM48C2104B
Text: FUNCTION GUIDE MEMORY ICs Density 16M bit Org. 4Mx4 Power Supply Port Number, 3.3V+0.3V KM44V4104B# features ' * w » 60/70/80 EDO 2K 50/60/70 Fast Page{4K) KM44V4104BL# 16M B/W 2Mx8 5V±10% KM48C2000B# Packages ' : K.-24 Pin S 0j(300m il) S.-24 Pin TSOP-ll(300mil)
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300mil)
300mil]
300milj
KM44V4104B#
KM44V4104BL#
KM48C2000B#
KM48C2000B-L#
KM48C2100B#
KM48C2100B
KM48C2004B#
KM48V2104B
KM48C2104B
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KM48V2104b
Abstract: No abstract text available
Text: KM48V2004BK CMOS DRAM ELECTR O NICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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PDF
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KM48V2004BK
512Kx8)
48V2004BK
003SS7D
KM48V2104b
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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Untitled
Abstract: No abstract text available
Text: KM48C2004BS CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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PDF
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KM48C2004BS
512Kx8)
KM48C2004B
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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KM416C60-7
Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55
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KM41C1000D-6
KM41C1000D-7
KM41C1000D-8
KM41C1000D-L6
KM41C1000D-L7
KM41C1000D-L8
KM48C124-55
KM48C124-6
KM416C60-6
KM416C64-6
KM416C60-7
KM48C2104B
KM48C2004B
dram 64kx1
km416c60
KM44V1004CL-7
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km44c2560
Abstract: KM48V2104B-6 KM44C16004A-5
Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8
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KM41C1000D-6
KM41C1000D-L6
KM41C1000D-7
KM41C1000D-L7
KM44C256D-7
KM44C256D-L7
KM41C1000D-8
258KX4
KM44C2560-6
km44c2560
KM48V2104B-6
KM44C16004A-5
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5322104BKU/BKUG KMM5322104BKU/BKUG Fast Page Mode with Extended Data Out 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322104BKU is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322104BKU consists of four CMOS
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KMM5322104BKU/BKUG
KMM5322104BKU/BKUG
2Mx32
KMM5322104BKU
28-pin
72-pin
KMM5322104BKU
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