UNR1213 Search Results

UN1213

Abstract: UNR1213 XP01213 XP1213
Contextual Info: Composite Transistors XP01213 XP1213 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1213(UN1213) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element

analog switching ic

Abstract: 2SK1103 UN1213 UNR1213 XN08081 XN8081
Contextual Info: Composite Transistors XN08081 XN8081 Silicon N-channel junction (FET) Silicon NPN epitaxial planer transistor (Tr) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element • 2SK1103 + UNR1213 (UN1213)

UN1213

Abstract: UNR1213 XP04213 XP4213
Contextual Info: Composite Transistors XP04213 XP4213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1213(UN1213) x 2 elements • Parameter Collector toMaximum base voltage Absolute Rating Collector to emitter voltage of

UN1213

Abstract: UNR1213 XN01213 XN1213
Contextual Info: Composite Transistors XN01213 XN1213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1213(UN1213) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1213

Abstract: UNR1213 XP06213 XP6213
Contextual Info: Composite Transistors XP06213 XP6213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1213(UN1213) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter

2SK1103

Abstract: UN1213 UNR1213 XP08081 XP8081
Contextual Info: Composite Transistors XP08081 XP8081 Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For analog switching (Tr1)/switching (Tr2) 0.65 1 6 2 5 3 4 +0.05 0.12 –0.02 2SK1103+UNR1213(UN1213) (transistors with built-in resistor)

UN111F

Abstract: UN1213 UNR111F UNR1213 XP03383
Contextual Info: Composite Transistors XP03383 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UNR1213(UN1213) + UNR111F(UN111F) • Absolute Maximum Ratings Parameter

XN4313

Contextual Info: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 0.50+0.10 –0.05 • UNR1213 (UN1213) + UNR1113 (UN1113) Tr1 1.1+0.2

Contextual Info: Composite Transistors XP03390 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 0.20±0.05 5 5˚ 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 • Basic Part Number of Element • UNR1213 (UN1213) + UNR1114 (UN1114) 0.9±0.1

UNR1114

Abstract: UNR1213 UP03390
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03390 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.05 1.20±0.05 1 2 3 (0.50) (0.50) 1.00±0.05 5˚ (0.20)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UN1213

Abstract: UNR1213 XN04213 XN4213
Contextual Info: Composite Transistors XN04213 XN4213 Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 5˚ Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3

UNR1218

Abstract: UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214
Contextual Info: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and

UNR1114

Abstract: UNR1213 UP03390
Contextual Info: Composite Transistors UP03390 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 4 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) • Two elements incorporated into one package (Transistors with built-in resistor)

Contextual Info: Composite Transistors XP04313 XP04313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 • Features 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03394 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 4 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) • Two elements incorporated into one package

UNR1210

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ

UNR1118

Abstract: UNR1213 UP03394
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03394 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.05 1.20±0.05 1 2 3 (0.50) (0.50) 1.00±0.05 5˚ (0.20)

UNR1114

Abstract: UNR1213 UP03390G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03390G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)

UNR1213

Abstract: UP01213
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01213 Silicon NPN epitaxial planar type Unit: mm +0.05 (0.30) 4 • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UN111F

Abstract: UN1213 UNR111F UNR1213 UP03383
Contextual Info: Composite Transistors UP03383 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) Unit: mm +0.05 (0.30) 4 • Features 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UNR1114

Abstract: UNR1213 UP03390G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03390G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

121f

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and