UNR111F Search Results

UN111F

Abstract: UNR111F XP0111F XP111F
Contextual Info: Composite Transistors XP0111F XP111F Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR111F(UN111F) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element

UN111F

Abstract: UNR111F XN0111F XN111F
Contextual Info: Composite Transistors XN0111F XN111F Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR111F(UN111F) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN111F

Abstract: UN1213 UNR111F UNR1213 XP03383
Contextual Info: Composite Transistors XP03383 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UNR1213(UN1213) + UNR111F(UN111F) • Absolute Maximum Ratings Parameter

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

Contextual Info: Composite Transistors XP0611FH XP611FH Silicon PNP epitaxial planer transistor 0.2±0.05 4 1.25±0.10 2.1±0.1 Features Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UN111F

Abstract: UN1213 UNR111F UNR1213 UP03383
Contextual Info: Composite Transistors UP03383 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) Unit: mm +0.05 (0.30) 4 • Features 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UNR1110

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ

UN111F

Abstract: UNR111F XN0111F XN111F xn111
Contextual Info: Composite Transistors XN0111F XN111F Silicon PNP epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UN111F

Abstract: UNR111F XP0111F XP111F
Contextual Info: Composite Transistors XP0111F XP111F Silicon PNP epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: Composite Transistors XP0611FH XP611FH Silicon PNP epitaxial planer transistor 0.2±0.05 4 1 2 5° 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo

common collector PNP

Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ

UN111F

Abstract: UN111H UNR111F UNR111H XN0611FH XN611FH
Contextual Info: Composite Transistors XN0611FH XN611FH Silicon PNP epitaxial planer transistor 3 2 5° 0.4±0.2 2.8+0.2 –0.3 6 1 (0.65) ● Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UNR1111

Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits

XP0611FH

Abstract: XP611FH UN111F UN111H UNR111F UNR111H
Contextual Info: Composite Transistors XP0611FH XP611FH Silicon PNP epitaxial planer transistor (0.425) Unit: mm For switching/digital circuits 0.2±0.05 5 4 M Di ain sc te on na tin nc ue e/ d 6 ● Two elements incorporated into one package. (Transistors with built-in resistor)

1117 S Transistor

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and

UN111F

Abstract: UN111H UNR111F UNR111H XN0611FH XN611FH
Contextual Info: Composite Transistors XN0611FH XN611FH Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100