UNR1212 Search Results

UN1112

Abstract: UN1212 UNR1112 UNR1212 XP04312 XP4312
Contextual Info: Composite Transistors XP04312 XP4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1212(UN1212) + UNR1112(UN1112) • Absolute Maximum Ratings Parameter

SC74A

Abstract: UN1212 UNR1212 XN01212 XN1212
Contextual Info: Composite Transistors XN01212 XN1212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1212(UN1212) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1212

Abstract: UNR1212 XN02212 XN2212
Contextual Info: Composite Transistors XN02212 XN2212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1212(UN1212) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1212

Abstract: UNR1212 XP06212 XP6212
Contextual Info: Composite Transistors XP06212 XP6212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1212(UN1212) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1

UN1212

Abstract: UNR1212 XP04212 XP4212
Contextual Info: Composite Transistors XP04212 XP4212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1212(UN1212) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

UN1212

Abstract: UNR1212 XP01212 XP1212
Contextual Info: Composite Transistors XP01212 XP1212 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1212( UN1212) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UN1212

Abstract: UNR1212 XN04212 XN4212
Contextual Info: Composite Transistors XN04212 XN4212 Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 6

UNR1218

Abstract: UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214
Contextual Info: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and

UN1112

Abstract: UN1212 UNR1112 UNR1212 XN04312 XN4312
Contextual Info: Composite Transistors XN04312 XN4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UN1212

Abstract: UNR1212 XN04212 XN4212
Contextual Info: Composite Transistors XN04212 XN4212 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current (Ta=25˚C)

UNR1210

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ

UN1212

Abstract: UNR1212 XN02212 XN2212
Contextual Info: Composite Transistors XN02212 XN2212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 ● 4 5 1.50+0.25 –0.05 3 Two elements incorporated into one package.

UNR1112

Abstract: UNR1212 UP03312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 2 3 (0.50) (0.50) 1.00±0.05 Collector-emitter voltage (Base open) Collector current

UN1212

Abstract: UNR1212 XP06212 XP6212
Contextual Info: Composite Transistors XP06212 XP6212 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Basic Part Number 1 2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05 5˚ Symbol Rating

Contextual Info: Composite Transistors XN0A312 XN1A312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 2 2.8+0.2 –0.3 4 5˚ 3 Two elements incorporated into one package.

Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

UNR1112

Abstract: UNR1212 UP03312
Contextual Info: Composite Transistors UP03312 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) 4 • Basic Part Number 1 2 3 (0.50) (0.50) 1.00±0.05 1.60±0.05 5˚ Symbol Rating Unit Collector-base voltage (Emitter open) Parameter VCBO 50 V

UNR1112

Abstract: UNR1212 UP03312G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03312G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For digital circuits • Features ue pl d in an c

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 2 3 (0.50) (0.50) 1.00±0.05 5˚ Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03312G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Features ■ Package • Two elements incorporated into one package

UN1112

Abstract: UN1212 UNR1112 UNR1212 XN04312 XN4312
Contextual Info: Composite Transistors XN04312 XN4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 3 Parameter 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)