UG30BPT Search Results

Contextual Info: UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3 www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES • Power pack • Glass passivated pallet chip junction • Ultrafast recovery time • Low switching losses, high efficiency

Contextual Info: UG30APT, UG30BPT, UG30CPT, UG30DPT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES • Power pack • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency

Contextual Info: UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

JESD22-B102D

Abstract: J-STD-002B UG30APT UG30BPT UG30CPT UG30DPT
Contextual Info: UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction TO-247AD TO-3P • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

UG30APT

Abstract: UG30BPT UG30CPT UG30DPT
Contextual Info: UG30APT thru UG30DPT Vishay Semiconductors formerly General Semiconductor Dual Ultrafast Plastic Rectifier Features TO-247AD 0.645 16.4 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 0.078 REF (1.98) 10 ° 30 0.170

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

UG30APT

Abstract: UG30BPT UG30CPT UG30DPT
Contextual Info: UG30APT THRU UG30DPT ULTRAFAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 30.0 Amperes TO-247AD FEATURES 0.645 16.4 0.625 (15.9) 0.203 (5.16) 0.193 (4.90) 0.245 (6.2) 0.225 (5.7) 0.078 REF (1.98) 0.323 (8.2) 0.313 (7.9)

Contextual Info: UG30APT THRU UG30DPT ULTRAFAST RECTIFIER Voltage - 50 to 200 Volts Current - 30.0 Amperes FEATURES ♦ Plastic material used carries Underwriters Labo­ ratory Flammability Classification 94V-0 ♦ Ideally suited for use in very high frequency switching power supplies, inverters and as

CTX12S

Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40

88762

Abstract: JESD22-B102 J-STD-002 UG30APT UG30BPT UG30CPT UG30DPT
Contextual Info: UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: UG30APT thru UG30DPT Ultrafast Plastic Rectifier Reverse Voltage 50 to 200V Forward Current 30A TO-247AD 0.645 16.4 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) Features 0.203 (5.16) 0.193 (4.90) 0.323 (8.2) 0.313 (7.9) 30 0.170 (4.3) 0.840 (21.3) 0.078 REF (1.98)

Contextual Info: UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 3 2 • High forward surge capability

CTX12S

Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
Contextual Info: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

TO263AA

Abstract: SMA UF4007 FEP16BT us1m minimelf FEP30DP DO-214AC schottky es1d FEP30GP FEP16GT center tap diodes 100V 15 A FEP16HT
Contextual Info: FAST EFFICIENT RECTIFIERS 1.0 AMPERE TO 30.0 AMPERES INTRODUCTION TO FAST EFFICIENT RECTIFIERS General Semiconductor’s Fast Efficient Rectifiers FER are a natural extension of our Schottky product portfolio. This is accomplished by offering very fast reverse recovery times (as low as 15 nanoseconds) and voltage levels as high as

1N5498

Abstract: CA542 AP6KE91A CGJ-1 DF06S 214 H AG 48 2KBP10M I1404 P6KE200 602 CA-592 BZWO4P
Contextual Info: NUMERICAL INDEX 1.5KA6.8.A .564 1.5KE22C.CA. 592 1.5KE170.A. 592 1N4383GP. 1.5KA7.5.A.564 1.5KE24.A.592 1ÆKE170C.CA.592 1N4384GP.244

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected