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    B2535 Search Results

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    B2535 Price and Stock

    SMC Diode Solutions MBRB2535CT

    DIODE ARRAY SCHOTTKY 35V D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBRB2535CT Reel 8,000
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    • 10000 $0.36362
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    Vishay Semiconductors MBRB2535CT

    DIODE ARR SCHOTT 35V 15A TO263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBRB2535CT Tube 1,000
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    • 1000 $1.9225
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    onsemi MBRB2535CTL

    DIODE ARR SCHOTT 35V 12.5A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBRB2535CTL Tube 50
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    • 100 $1.9098
    • 1000 $1.9098
    • 10000 $1.9098
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    Bristol Electronics MBRB2535CTL 51
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    MBRB2535CTL 27
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    Conductive Containers Inc MB2535-15-TPU

    MOLDED CASE3-1/2 X 2-9/16 X 1/2"
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    DigiKey MB2535-15-TPU Box 100
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    • 100 $5.5504
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    Micro Commercial Components MBRB2535CT-TP

    DIODE ARRAY SCHOTT 35V 30A D2PAK
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    DigiKey MBRB2535CT-TP Bulk 800
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    Mouser Electronics MBRB2535CT-TP
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    Find more B2535 price and stock on Findchips.com

    B2535 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    b25355-j1205-k001

    Abstract: B25650 B25355 B25355-L2326-K004 SIEMENS epcos CAPACITORS B25355-G6205-K001 IEC bolt locked torque B25355-J2405-K001 B25355-L1227-K004 b25355-j2504-k001
    Text: Capacitors for Power Electronics Series/Type: B253* The following products presented in this data sheet are being withdrawn. Ordering Code Substitute Product B25355L8367K004 B25355L7477K004 B25355L6627K004 B25355L4887K004 B25355L2856K004 B25355L2805K001 B25355L2635K001


    Original     		B25355L8367K004 B25355L7477K004 B25355L6627K004 B25355L4887K004 B25355L2856K004 B25355L2805K001 B25355L2635K001 B25355L2586K004 B25355L2566K004 B25355L2466K004 b25355-j1205-k001 B25650 B25355 B25355-L2326-K004 SIEMENS epcos CAPACITORS B25355-G6205-K001 IEC bolt locked torque B25355-J2405-K001 B25355-L1227-K004 b25355-j2504-k001 PDF

    WS80a

    Abstract: b25353 siemens SPC 4320 C3227* transistor b25353-k1118-k4 siemens matsushita kondensator B25834-K6106-K9 K4106 V245 datenbuch
    Text: Inhaltsverzeichnis Anwendungen- und Bauformen-Übersicht Seite 5 9 Anwendungen Kondensator-Fragebogen 17 20 Allgemeine technische Angaben 23 Angaben zur Qualität 55 Gleichspannungs-Kondensatoren 63 Wechselspannungs-Kondensatoren 163 Kondensator-Befestigungen


    Original     		PDF

    B2535L diode

    Abstract: b2535l B2535L 220 MBRB2535CTL MBRB2535CTLT4 SMD310
    Text: B2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB2535CTL MBRB2535CT/D B2535L diode b2535l B2535L 220 MBRB2535CTL MBRB2535CTLT4 SMD310 PDF

    b2535

    Abstract: b2545 B2545 M b2535 diode
    Text: MOTOROLA MBR2535CT MBR2545CT SEM ICONDUCTOR TECHNICAL DATA MBR2545CT is a Motorola Preferred Device Sw itchm ode Power R e ctifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:


    OCR Scan     		MBR2535CT MBR2545CT MBR2545CT MBR2535CT, b2535 b2545 B2545 M b2535 diode PDF

    B2535LG

    Abstract: aka B2535LG B2535L B2535L diode B2535L AKA B2535L 220 SCHOTTKY BARRIER RECTIFIER aka MBR2535CTL MBR2535CTLG
    Text: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*


    Original     		MBR2535CTL B2535LG aka B2535LG B2535L B2535L diode B2535L AKA B2535L 220 SCHOTTKY BARRIER RECTIFIER aka MBR2535CTL MBR2535CTLG PDF

    5SBA20

    Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
    Text: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.


    OCR Scan     		5KA43A 5KE440CA 1N746 1N759 1N957 1N979 ZTK33C Z4KE100 ZGL41 ZGL41-200A 5SBA20 ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249 PDF

    RA53 thermistor

    Abstract: thermistor ntc RA53 thermistor Ra53 thermistor ntc 8.2k Bowthorpe Thermistors B2545 RA53 RA54 20A NTC THERMISTORS NTC 20K thermistor
    Text: 19h !5i- 111 BOWTHORPE THERMISTORS Q NTC Thermistors INDUSTRIAL/CONSUMER TELECOMMUNICATIONS/DP PROFESSIONAL RA TYPE Description Type RA are directly heated bead type thermistors primarily intended for ap­ plications where high sensitivity to electrical power input is required.


    OCR Scan     		B25-8S RA53 thermistor thermistor ntc RA53 thermistor Ra53 thermistor ntc 8.2k Bowthorpe Thermistors B2545 RA53 RA54 20A NTC THERMISTORS NTC 20K thermistor PDF

    K4887-K4

    Abstract: B25355-K167-K4 ws dvd 290
    Text: MP DC Capacitors Smoothing, Supporting, Discharge B 25 355 High peak-current capability Wide capacitance and voltage range Construction • Self-healing • Paper dielectric • Oil and hard-wax impregnated tubular windings no PCB • Metal-sprayed face ends ensure reliable contacting


    OCR Scan     		KLK0875â KLK1270-C B25355-F6405-K1 fi235bQ5 K4887-K4 B25355-K167-K4 ws dvd 290 PDF

    B2535L

    Abstract: B2535L diode
    Text: MBR2535CTL SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency


    Original     		MBR2535CTL B2535L B2535L diode PDF

    B2535L

    Abstract: B2535L diode B2535 MBRB2535CTL SMD310
    Text: MOTOROLA Order this document by B2535CTL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE Power Designer's Rectifier B2535CTL D2PAK Surface Mount Power Package Motorola Preferred Device The D2PAK Power Rectifier employs the Schottky Barrier principle in a large


    Original     		MBRB2535CTL/D MBRB2535CTL B2535L B2535L diode B2535 MBRB2535CTL SMD310 PDF

    b2535l

    Abstract: B2535L diode MBR2535CTL
    Text: MOTOROLA Order this document by MBR2535CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBR2535CTL . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide


    Original     		MBR2535CTL/D MBR2535CTL b2535l B2535L diode MBR2535CTL PDF

    C3205 transistor

    Abstract: C4106 C4106 transistor C3205 Transistor C3205 k3505 MP67B k2255 L0307 c4106 datasheet
    Text: Contents Index of Types Application and Selector Guide 5 8 9 Applications Capacitor Questionnaire 17 20 General Technical Information 23 Thermal Design of Capacitors for Power Electronics 45 Quality Specifications 53 DC Capacitors for Power Electronics 61


    Original     		PDF

    Motorola b2545

    Abstract: b2535 b2535 diode b2545 b2545 MOTOROLA 221A-06 MBR2535CT MBR2545CT
    Text: MOTOROLA Order this document by MBR2535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2535CT MBR2545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:


    Original     		MBR2535CT/D MBR2535CT MBR2545CT MBR2545CT 26otorola, Motorola b2545 b2535 b2535 diode b2545 b2545 MOTOROLA 221A-06 MBR2535CT PDF

    B2535LG

    Abstract: aka B2535LG PPAP MANUAL for automotive industry NRVBB2535CTLG MBRB2535CTLG
    Text: B2535CTLG, B2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		MBRB2535CTLG, NRVBB2535CTLG MBRB2535CTL/D B2535LG aka B2535LG PPAP MANUAL for automotive industry NRVBB2535CTLG MBRB2535CTLG PDF

    B2545 AKA

    Abstract: b2535 b2545 b2535 diode B2535 AKA b2535 on MBR2545CT MBR2535CT mbr2545 01 04 B2545 AKA
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 r14525 MBR2535CT/D B2545 AKA b2535 b2545 b2535 diode B2535 AKA b2535 on MBR2535CT mbr2545 01 04 B2545 AKA PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBR2535CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide


    OCR Scan     		MBR2535CTL/D 21A-06 O-220AB) PDF

    Untitled

    Abstract: No abstract text available
    Text: , _ Ä SEMICONDUCTOR TECHNICAL DATA 1 Or der this document by m b rb 2 5 3 s c tl/d Designer’s Data Sheet SWITCHMODE™ Pow er R e c tifie r B2535CTL D2PAK Surface Mount Power Package Motorola Preferred Device The D2pAK Power Rectifier employs the Schottky Barrier principle in a large


    OCR Scan     		MBRB2535CTL MBRB2535CTL/D PDF

    B2535G

    Abstract: b2535 b2535l B2535L diode MBR2535CTL MBR2535CTLG SCHOTTKY BARRIER RECTIFIER aka
    Text: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*


    Original     		MBR2535CTL MBR2535CTL/D B2535G b2535 b2535l B2535L diode MBR2535CTL MBR2535CTLG SCHOTTKY BARRIER RECTIFIER aka PDF

    B2535L

    Abstract: MBR2535CTL MBR2535CTLG B2535L diode
    Text: MBR2535CTL SWITCHMODEt Power Rectifier The MBR2535CTL employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency


    Original     		MBR2535CTL MBR2535CTL MBR2535CTL/D B2535L MBR2535CTLG B2535L diode PDF

    b2535l

    Abstract: B2535L diode B2535L 220
    Text: B2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB2535CTL b2535l B2535L diode B2535L 220 PDF

    B81133 X2 mkt

    Abstract: B25355 B25650 CAPACITOR, 33000 MF, 63 VDC capacitor mkt 344 ultracapacitor b32612 B25655 CAPACITOR B81130 X2 MKP B25839
    Text: Capacitors Folienkondensatoren Film Capacitors MKT MKT/MFT MKT/MKT-S B32572 B32573 B32231 B32232 Nennkapazität Rated capacitance CR Merkmale Features B32582 B32584 B32227 B32237 B32537 B32538 SilverCaps ohne Umhüllung Plastic case (UL 94 V-0) SilverCaps


    Original     		B32520 B32529 B32560 B32564 B32591. B32594 B32572 B32573 B32582 B32584 B81133 X2 mkt B25355 B25650 CAPACITOR, 33000 MF, 63 VDC capacitor mkt 344 ultracapacitor b32612 B25655 CAPACITOR B81130 X2 MKP B25839 PDF

    b2535

    Abstract: b2545 b2535 diode U4T DIODE Motorola b2545 2535c B2545 M BR2545CT
    Text: MOTOROLA Order this document by MBR2535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR2535CT MBR2545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:


    OCR Scan     		MBR2535CT/D B2535, B2545 MBR2535CT MBR2545CT MBR2545CT -220A b3b7255 b2535 b2535 diode U4T DIODE Motorola b2545 2535c B2545 M BR2545CT PDF

    b2535l

    Abstract: B2535
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifier . . . employing the Schottky Barrier principle in a large m e ta i-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage,


    OCR Scan     		MBR2535CTL b2535l B2535 PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF