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    UG30CPT Search Results

    UG30CPT Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UG30CPT General Semiconductor Ultrafast Plastic Rectifier Original PDF
    UG30CPT General Semiconductor ULTRAFAST EFFICIENT PLASTIC RECTIFIER Original PDF
    UG30CPT Vishay Siliconix Dual Ultrafast Plastic Rectifier Original PDF
    UG30CPT-E3/45 Vishay Semiconductors Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 150V 30A TO3P Original PDF

    UG30CPT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3 www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES • Power pack • Glass passivated pallet chip junction • Ultrafast recovery time • Low switching losses, high efficiency


    Original     		PDF UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3 O-247AD 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: UG30APT, UG30BPT, UG30CPT, UG30DPT www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES • Power pack • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency


    Original     		PDF UG30APT, UG30BPT, UG30CPT, UG30DPT O-247AD 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF UG30APT UG30DPT 2002/95/EC 2002/96/EC O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    JESD22-B102D

    Abstract: J-STD-002B UG30APT UG30BPT UG30CPT UG30DPT
    Text: UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction TO-247AD TO-3P • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop


    Original     		PDF UG30APT UG30DPT O-247AD 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B UG30BPT UG30CPT UG30DPT

    COLOR tv tube charger circuit diagrams

    Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a

    Untitled

    Abstract: No abstract text available
    Text: UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF UG30APT UG30DPT 2002/95/EC 2002/96/EC O-247AD 08-Apr-05

    UG30APT

    Abstract: UG30BPT UG30CPT UG30DPT
    Text: UG30APT thru UG30DPT Vishay Semiconductors formerly General Semiconductor Dual Ultrafast Plastic Rectifier Features TO-247AD 0.645 16.4 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 0.078 REF (1.98) 10 ° 30 0.170


    Original     		PDF UG30APT UG30DPT O-247AD 50mVp-p 03-Jul-02 UG30BPT UG30CPT UG30DPT

    BYW19-1000

    Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
    Text: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820


    Original     		PDF FO-012 1-800-4-HARRIS BYW19-1000 BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    UG30APT

    Abstract: UG30BPT UG30CPT UG30DPT
    Text: UG30APT THRU UG30DPT ULTRAFAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 30.0 Amperes TO-247AD FEATURES 0.645 16.4 0.625 (15.9) 0.203 (5.16) 0.193 (4.90) 0.245 (6.2) 0.225 (5.7) 0.078 REF (1.98) 0.323 (8.2) 0.313 (7.9)


    Original     		PDF UG30APT UG30DPT O-247AD 50mVp-p UG30BPT UG30CPT UG30DPT

    CTX12SL

    Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4


    Original     		PDF 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 CTX12SL CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200

    88762

    Abstract: JESD22-B102 J-STD-002 UG30APT UG30BPT UG30CPT UG30DPT
    Text: UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF UG30APT UG30DPT 2002/95/EC 2002/96/EC O-247AD 18-Jul-08 88762 JESD22-B102 J-STD-002 UG30BPT UG30CPT UG30DPT

    Untitled

    Abstract: No abstract text available
    Text: UG30APT thru UG30DPT Ultrafast Plastic Rectifier Reverse Voltage 50 to 200V Forward Current 30A TO-247AD 0.645 16.4 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) Features 0.203 (5.16) 0.193 (4.90) 0.323 (8.2) 0.313 (7.9) 30 0.170 (4.3) 0.840 (21.3) 0.078 REF (1.98)


    Original     		PDF UG30APT UG30DPT O-247AD 50mVp-p

    Untitled

    Abstract: No abstract text available
    Text: UG30APT thru UG30DPT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 3 2 • High forward surge capability


    Original     		PDF UG30APT UG30DPT 2002/95/EC 2002/96/EC O-247AD J-STD-002B JESD22-B102D 08-Apr-05

    CTX12S

    Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
    Text: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT


    Original     		PDF SGRECT/0802 CTX12S CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent

    TO263AA

    Abstract: SMA UF4007 FEP16BT us1m minimelf FEP30DP DO-214AC schottky es1d FEP30GP FEP16GT center tap diodes 100V 15 A FEP16HT
    Text: FAST EFFICIENT RECTIFIERS 1.0 AMPERE TO 30.0 AMPERES INTRODUCTION TO FAST EFFICIENT RECTIFIERS General Semiconductor’s Fast Efficient Rectifiers FER are a natural extension of our Schottky product portfolio. This is accomplished by offering very fast reverse recovery times (as low as 15 nanoseconds) and voltage levels as high as


    Original     		PDF VB32-50 BYVB32-200 O-263AB UG30APT UG30DPT O-247AD FEP30AP FEP30JP O-247A GI2401 TO263AA SMA UF4007 FEP16BT us1m minimelf FEP30DP DO-214AC schottky es1d FEP30GP FEP16GT center tap diodes 100V 15 A FEP16HT

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    Untitled

    Abstract: No abstract text available
    Text: UG30APT THRU UG30DPT ULTRAFAST RECTIFIER Voltage - 50 to 200 Volts Current - 30.0 Amperes FEATURES ♦ Plastic material used carries Underwriters Labo­ ratory Flammability Classification 94V-0 ♦ Ideally suited for use in very high frequency switching power supplies, inverters and as


    OCR Scan     		PDF UG30APT UG30DPT 247AD O-247-AD

    1N5498

    Abstract: CA542 AP6KE91A CGJ-1 DF06S 214 H AG 48 2KBP10M I1404 P6KE200 602 CA-592 BZWO4P
    Text: NUMERICAL INDEX 1.5KA6.8.A .564 1.5KE22C.CA. 592 1.5KE170.A. 592 1N4383GP. 1.5KA7.5.A.564 1.5KE24.A.592 1ÆKE170C.CA.592 1N4384GP.244


    OCR Scan     		PDF 5KA10 5KA11 5KA12 5KA13 5KA15 5KA16 5KA18 5KA20 5KA22 5KA24 1N5498 CA542 AP6KE91A CGJ-1 DF06S 214 H AG 48 2KBP10M I1404 P6KE200 602 CA-592 BZWO4P