U 35 DIODE Search Results

IN647

Abstract: IN645 CA500 diode oa202 TID125 TID126 TID139N 100v 500ma diode IS113 OA202
Contextual Info: T In e x a s D io de A rra y s P lastic D u a l-In -L in e Package < W orking Voltage 3 Av. Rect. Current General Purpose Diodes Max. Forward Voltage V g. IF IS920 IS921 IS922 IS923 IS924 DO -35 DO -35 DO -35 DO -35 DO -35 200 200 200 200 200 50 100 150 200

diode T 3512

Abstract: AR3500 AR3512
Contextual Info: AR3500 thru AR3512 35 Amps. Automotive Rectifier Diodes Voltage Range 50 to 1200 Volts Forward Current 35 Amperes 5VM5EMI SEMICONDUCTOR Features ♦ ♦ ♦ ♦ ♦ H igh c u rre n t c a p a b ility High su rg e c u rre n t c a p a b ility High reliab ility

Contextual Info: A POWERHOUSE RECTIFIERS U LTR A -F A S T R E C T IF IE R S PACKAGE 2 LEAD HERMETIC sBT\ VF 'R !rr VOLTS TJ=100°C AMPS us 50 0.9 0.001 35 15 100 0.9 0.001 35 SPD1515 15 150 0.9 0.001 35 SPD1520 15 200 0.9 0.001 35 SPD1530 15 300 1.15 0.001 35 SPD1540 15 400

1NS246B

Contextual Info: DO-35 glass 0.5 Watt 1N5225B thru 1N5282B Use Advantages u Zener Diodes For use in dipping and stabilizing circuits, where real protection is needed. Competitive glass replacement for plastic DO-35 zener diodes. Compatible with all major automatic assembly equipment.

Contextual Info: 1N5221B - 1N5267B VISHAY 500mW EPITAXIAL ZENER DIODE /U T E M ir I POWER SEHCONNJCTOR/ Features 500mW Power Dissipation High Stability Low Noise Surface Mount Equivalents Available Hemetic Package _L ~T c Mechanical Data_ DO-35 Case: DO-35, Plastic

UV diode 254 nm

Abstract: ixys 047 MD1000
Contextual Info: □IXYS Advanced Technical Data Power Schottky Rectifier V RSM V RRM V 2X10A VRRM = 35 - 45 V •n Type I ►I T M TO-220 AB V 35 45 35 45 Symbol U DSSK 20 Uv = DSSK 20-0035B S DSSK 20-0045B(S) Test Conditions Maximum Ratings (per diode) rms Uav Uav Tc = 135°C; rectangular, d = 0.5

Contextual Info: □IXYS Power Schottky Rectifier DSSK 28 U = 2 x 14 a VRRM = 35 - 45 V Preliminary data V RSM V RRM V I Type ►I I H TO-220 A B V 35 45 35 45 Symbol DSSK 28-0035A DSSK 28-0045A Test Conditions A Maximum Ratings per diode ^FAV Tc = 156°C; rectangular, d = 0.5

Contextual Info: MPF6659 M A XIM U M RATINGS Rating Symbol MPF6659 MPF666Û MPF6661 D ra in -So u rce V oltage VDS 35 60 90 V dc Drain-Gate V oltage VDG 35 60 90 V dc G ate-Source V oltage — C o n tin u o u s - Non-repetitive tp « 50 ¿is vg s ±20 ±40 Vg SM Drain Current

Contextual Info: Surface M o u n t sw itch ing and attenuator Silicon PIN diodes Switch application Characteristics @ Ta=+25° C O F= 120MHz Q max II conditions Type DH50037 DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051 V min. 30 35 35 50 100 100 200 200

Contextual Info: SK 35 DGDL 126 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper PI:9 <I <I¥; PG:9 =' U BS VIA -%2&'' ,.8& */'& '5& /E/&1 =' U BS YRWZ VI <I¥;U B F <I%,+A .5 U @ +' =^ Diode - Inverter,Chopper SEMITOP 4 3-phase bridge rectifier +

BAW76

Abstract: Small Signal Diodes 10k VR BAW76 datasheet BAW75 DO-204AH
Contextual Info: BAW75 and BAW76 Small Signal Diodes DO-204AH DO-35 Glass t c u rod P w Ne Features • Silicon Epitaxial Planar Diodes • Fast switching diodes. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13” reel (52mm tape), 20K/box

BAW76

Abstract: BAW75 10k VR DO-204AH baw76v
Contextual Info: BAW75 and BAW76 Small-Signal Diodes DO-204AH DO-35 Glass t c u rod P New Features • Silicon Epitaxial Planar Diodes • Fast switching diodes. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13” reel (52mm tape), 20K/box

Contextual Info: DSS 10-0035/45A Power Schottky Rectifier U av V rrm VF 10 A 35 • 45 V 0.58 V Preliminary Data v RSM V, V V 35 45 35 45 * f TT\ Type 9 Vsz J ^ DSS 10-0035A DSS 10-0045A I C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N950 - 1N956 TYPE NUMBER 1N950 1N951 1N952 1N953 1N954 1N955 1N956 CAPACITANCE @ - 4 Vdc 35 50 70 100 35 50 70 Package Style DC Power Dissipation Operating Temperature Topr

1S1555

Abstract: 1S15555 1S1553/1S1555
Contextual Info: DO-35 B o_C DIM A B C D HD: MIN 25.40 3.03 0.46 1,52 MAX — 4.44 0,56 2.20 NOTES:1. CATHODE IS MARKED BY BAND 2. ALL DIMENSIONS ARE IN M.M. DO-35 Switching Diodes 500 mW Electrical Characteristics (At Ta=25°C, U n less Otherw ise Specified at V R Type

BZX 9V1

Abstract: BZX 5V6 bzx 2v7 6v86 8zx 5v6 BZX 150 bzx 8v2 BZX 4V7 8v2 BZX 46-C
Contextual Info: Voltage regulator diodes D O 35 P,ot 500 mW T amb 25 ° C T (yJ( max 175 °C Diodes de régulation de tension DO 35 The regulation voltages are defined according to the E 2 4 series. For other tolerances, consult the manufacturer Les tensions de régulation so n t définies selon ta série £ 24. N o u s consulter p o u r des tolérances différentes.

itt diodes

Abstract: ITT 914 4148 itt itt 1501 ITT2003 ITT700 ITT777 itt diodes 125
Contextual Info: Silicon Diodes Silicon Planar Diodes in “ d o u ble-plug” D O -35 and DO-7 g la ss en ca p su la tio n s Type M axim u m R a tin g s C h a ra c te ris tic s at Tamb = 2 5 C Si fa m b 25°C DO-7 DO-35 Vr V Vrm V lo mA @ @ T a mb = ca Je ^ 25 °C P tot

diac N413

Abstract: N413 N413M n413m diac diac bidirectional diode ht 40 diac VB01 diac diac with triac DIAC DO35
Contextual Info: DIAC N413 SILICON BIDIRECTIONAL TRIGGER DIODE FEATURES Suitable fo r T R I AC trigger • DO-35 package MAXIMUM RATINGS PACKAGE DIMENSIONS U nit • mm ITEM SYMBOL Peak Current *P Storage Temperature Tstg Junction Temperature Ti 0 2.2 MAX. RATING U N IT

1N750 zener

Abstract: 1N750 diode 1N750 Zener 5.1V 1N4370 1N4371 1N4372 1N746 1N747 1N748
Contextual Info: 1 N 7 46 THRU 1 N 7 5 9 AND 1 N 4 37 0 1 N 4 37 2 th r u 500mW SILICON ZENER DIODES VOLTAGE RANGE 2.4 to 12.0 V olts FEATURES * Zener voltage 2. 4V to 12. 0V * Metallurgical^ bonded device types DO-35 MECHANICAL CHARACTERISTICS * CASE: Hermetically sealed glass case. DO - 35.

IN968B

Abstract: IN5229B IN5227B MMBZ5239B IN5240B IN5240 MMBZ5231B 1N5217B S57B MMBD5248B
Contextual Info: Fairchild Semiconductor [ ¡ j ^ g pQwer an j Sjnna| TeClMOlOClieS Selection Guides Zener Diodes Zener Diodes T h ro u g h - H a le (DQ -35 S u r f a c e M o u n t (SO T-23 ) *ZY A (mA) SO T -2 3 MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B

1n4148 D035

Abstract: BE110 1N4449 replace 1N4448 BF113 1n3600 die 1N4150 DIE
Contextual Info: S ilicon D iodes Silicon Sw itching D iodes for C o m p u ter A pplications in D O -35 & LL-34/35 Packages Peak Inverse V olta g e ÍM IN . PIV) Type Volts M axim um A verag e R ectified C u rre n t M axim um P ow er D issipation @ 25: C (W mA M axim um

35VW

Contextual Info: • 7AZAW OOOflOl? ■RHM K / L ig h t Emitting Diodes SLT-35 = S erie s SLT-35 Series J f¿ 7 > y 3 X 4 .5 m m Triangular Lamps 1 L E D 5J « y 0 / D im e n s io n s (U n it: mm) S L T - 3 5 v U —X t t , f l i t * t ^ t C G a P | g 3 X 4 . 5 m m O ~ ^ j2 H ^

LN4149

Abstract: 1N4009 equivalent 1N3604 cu308 1N4009 1N3600 x5200 1N4149 1N4150 1N914
Contextual Info: a SEMICON DUC TORS INC CHE » | 613bb5D □□DDSS7 S | Silicon Switching Diodes DO-35 Package ABSOLUTE M A X IM U M R ATING S @25<>C Storage Temperature .,. Operating Temperature.

Contextual Info: LC2M0S Precision Mini-DIP Analog Switch ADG419 ANALOG DEVICES FEATURES 44 V Supply M axim um Ratings Vsg to V DD Analog Signal Range Low On Resistance < 35 i l U ltralo w Power Dissipation (< 35 (jiW) Fast Transition Tim e (160 ns max) Break-Before-Make Switching Action