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Chelton Telecom and Microwave DH50037-85NT1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	DH50037-85NT1		853			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	DH50037-85NT1		682			1 $15 10 $15 100 $15 1000 $7.5 10000 $7.5	Buy Now

DH50037 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
DH50037		Temex	MICROWAVE SILICON COMPONENTS		Original	PDF

DH50037 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Surface M o u n t sw itch ing and attenuator Silicon PIN diodes Switch application Characteristics @ Ta=+25° C O F= 120MHz Q max II conditions Type DH50037 DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051 V min. 30 35 35 50 100 100 200 200	OCR Scan	DH50037 DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051 120MHz	PDF
Contextual Info: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction	Original	EH50072 EH50073 EH50074 EH50075 EH50076 EH50077 EH50101 EH50102 EH50103 EH50104	PDF
EH76150 die Abstract: DH252 DH256 all diodes ratings step recovery diode dh252 temex dh292 DH315 DH303 DH324 DH312 Contextual Info: SILICON MICROWAVE DIODES Step Recovery Diodes MICROWAVE SILICON MICROWAVE DIODES STEP RECOVERY DIODES All the detail specification shall be read in conjunction with ESA/SCC Generic Specification N° 5010, the special requirements are included in the detail specification.	Original	ESA/SCC5512/016 DH252 DH256 DH292 DH267 ESA/SCC5512/016 EH76150 die DH252 DH256 all diodes ratings step recovery diode dh252 temex dh292 DH315 DH303 DH324 DH312	PDF
dh50076 Abstract: EH50052 M208 Contextual Info: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction	Original	EH50033 EH50034 EH50035 EH50036 EH50037 EH50052 EH50053 EH50054 EH50055 EH50056 dh50076 M208	PDF
dh50076 Abstract: DH50037 M208 Contextual Info: SILICON PIN DIODES Microwave applications Ultrafast switching silicon PIN diodes Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction	Original	EH50033 EH50034 EH50035 EH50036 EH50037 EH50052 EH50053 EH50054 EH50055 EH50056 dh50076 DH50037 M208	PDF
sqm1150 Abstract: smd diode f54 sqm1250 DH60034 srd dh294 bh16 transistor step recovery diode dh252 temex DH252 M208 B1 DH294 Contextual Info: MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice.	Original		PDF