tws315
Abstract: RWS - 315 TWS-315 transmitter 433.92 MHz 5v ask ht12e ask module HT 12E APPLICATION transmitter 433.92 MHz 5v tws bs3 433 RWS 315 TWS-BS3
Text: WEN SHING DATA SHEET Transmitter Module : TWS-BS3 433.92 MHz *Frequency Range: 433.92 MHz *Modulate Mode: ASK *Circuit Shape: SAW *Date Rate: 8kbps *Supply Voltage: 3~ 12 V *Power Supply and All Input / Output Pins: -0.3 to +12.0 V *Non-Operating Case Temperature: -20 to +85
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92MHz
200KHz)
HT-12D
tws315
RWS - 315
TWS-315
transmitter 433.92 MHz 5v ask
ht12e ask module
HT 12E APPLICATION
transmitter 433.92 MHz 5v
tws bs3 433
RWS 315
TWS-BS3
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F9901
Abstract: LQFP48 MB40C328 MB40C328PFV
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-28216-1E ASSP For Video Applications CMOS 8-bit 100 MSPS A/D Converter MB40C328 • DESCRIPTION MB40C328 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • •
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DS04-28216-1E
MB40C328
MB40C328
F9901
LQFP48
MB40C328PFV
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F9901
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28216-1E ASSP For Video Applications CMOS 8-bit 100 MSPS A/D Converter MB40C328 • DESCRIPTION MB40C328 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • • • • • • • Resolution
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DS04-28216-1E
MB40C328
MB40C328
D-63303
F9901
F9901
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28215-1E ASSP For Video Applications CMOS 8-bit 140 MSPS A/D Converter MB40C318 • DESCRIPTION MB40C318 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • • Resolution Linearity error
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DS04-28215-1E
MB40C318
MB40C318
D-63303
F9901
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F9901
Abstract: LQFP48 MB40C318 MB40C318PFV
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-28215-1E ASSP For Video Applications CMOS 8-bit 140 MSPS A/D Converter MB40C318 • DESCRIPTION MB40C318 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • •
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DS04-28215-1E
MB40C318
MB40C318
F9901
LQFP48
MB40C318PFV
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EM542323TQ-11
Abstract: TQFP 14X20
Text: EtronTech EM542323 2.5V/3.3V I/O 64K x 32 Pipelined Burst SRAM Preliminary 9/97 • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT # VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2
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EM542323
EM542323TQ-11
TQFP 14X20
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Untitled
Abstract: No abstract text available
Text: EtronTech EM541323 2.5V/3.3V I/O 32K x 32 Pipelined Burst SRAM Preliminary 01/98 • • • • • • • A6 A7 CE1# CE2 BW4# BW3# BW2# BW1# CE3# VDD VSS CLK GW# BWE# OE# ADSC# ADSP# ADV# A8 A9 NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23
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EM541323
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MB85R256s
Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256 MB85R256PF MB85R256PFTN FUJITSU FRAM TCA 150
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-3E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256 • DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS05-13101-3E
MB85R256
MB85R256
F0404
MB85R256s
FPT-28P-M03
FPT-28P-M17
MB85R256PF
MB85R256PFTN
FUJITSU FRAM
TCA 150
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-4E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256 • DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS05-13101-4E
MB85R256
MB85R256
F0504
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th 2167.1
Abstract: tda 7244 TDA 3553 TDA 2010 Circuit tda 266 tda 8895 tda 8956 tda 2222 BPW 34 datasheet TDA 2010
Text: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1
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STDL130
th 2167.1
tda 7244
TDA 3553
TDA 2010 Circuit
tda 266
tda 8895
tda 8956
tda 2222
BPW 34 datasheet
TDA 2010
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MB85R256HPF
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-2E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS05-13106-2E
MB85R256H
MB85R256H
F0702
MB85R256HPF
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000read
Abstract: MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN MB85R256HPFTN TCA 120
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS05-13106-1E
MB85R256H
MB85R256H
F0606
000read
MB85R256HPF
FPT-28P-M03
FPT-28P-M17
MB85R256HPFCN
MB85R256HPFTN
TCA 120
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MB85R256F
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-1v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00011-1v0-E
MB85R256F
MB85R256F
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MB85R256HPF-G-BNDAE1
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-5E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS05-13106-5E
MB85R256H
MB85R256H
MB85R256HPF-G-BNDAE1
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CY7C1380B
Abstract: CY7C1382 CY7C1382B CY7C1380 TWS - 315
Text: 380B CY7C1380B CY7C1382B 512K x 36/1M x 18 Pipelined SRAM Features isters controlled by a positive-edge-triggered Clock Input CLK . The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE), burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb,
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CY7C1380B
CY7C1382B
36/1M
Int01074
CY7C1380B
CY7C1382
CY7C1382B
CY7C1380
TWS - 315
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-2v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
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DS501-00003-2v0-E
MB85R1001A
MB85R1001A
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
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DS501-00003-3v0-E
MB85R1001A
MB85R1001A
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00004-3v0-E
MB85R1002A
MB85R1002A
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MB85R4001ANC-GE1
Abstract: MB85R4001A IC TRAY
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-2v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
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DS501-00005-2v0-E
MB85R4001A
MB85R4001A
MB85R4001ANC-GE1
IC TRAY
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-3v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS
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DS501-00005-3v0-E
MB85R4001A
MB85R4001A
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00006-3v1-E Memory FRAM 4 M Bit 256 K x 16 MB85R4002A • DESCRIPTIONS The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00006-3v1-E
MB85R4002A
MB85R4002A
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BA100 diode
Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance
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K5C6481NT
4Mx16)
512Kx16)
512Kx10
81-Ball
80x11
BA100 diode
BA102
ba107
Samsung MCP
BA125 Diode
diode ba102
BA134
BA100
BA106
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DS-501
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-2v0-E Memory FRAM 1 M Bit 64 K 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
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DS501-00004-2v0-E
MB85R1002A
MB85R1002A
DS-501
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TCP 8126
Abstract: No abstract text available
Text: M ay 1992 Edition 1.1 FUJITSU DATA SHEET M B 9 8 A 8 0 9 2 X - / 8 1 0 2 x - / 8 1 1 2 x - / 8 1 2 2 x -2 5 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1 M / 2 M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are
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MB98A8092x,
MB98A8102x,
MB98A8112x
MB98A8122x
68-pin
16-bit
374T75b
MB98A8092X-25
MB98A8102X-25
MB98A8112X-25
TCP 8126
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