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RAMXEED MB85R1002ANC-GE1 IC FRAM 1MBIT PARALLEL 48TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MB85R1002ANC-GE1	Tray			128	1 - 10 - 100 - 1000 $8.66594 10000 $8.66594	Buy Now
Verical	MB85R1002ANC-GE1		42		4	1 - 10 $10.4 100 $10.4 1000 $10.4 10000 $10.4	Buy Now
Braemac Americas-Symmetry	MB85R1002ANC-GE1				1	1 $6.4 10 $6.4 100 $6.4 1000 $6.4 10000 $6.4	Buy Now
KAGA FEI America Inc MB85R1002ANC-GE1 F-RAM 1Mbit FeRAM (64k x16) parallel interface - TSOP48 tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MB85R1002ANC-GE1		30			1 $11.18 10 $10.03 100 $8.91 1000 $7.86 10000 $7.86	Buy Now
FUJITSU Limited MB85R1002ANC-GE1 SPECIALTY MEMORY CIRCUIT, PDSO48
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MB85R1002ANC-GE1		116			1 $20.8643 10 $20.8643 100 $16.2278 1000 $16.2278 10000 $16.2278	Buy Now
RAMXEED MB85R1002APFCN 1Mbit FRAM x16 parallel TSOP48
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Braemac Americas-Symmetry	MB85R1002APFCN				1	1 $11.08 10 $11.08 100 $11.08 1000 $11.08 10000 $11.08	Buy Now
RAMXEED MB85R1002ABGT 1Mbit FRAM x16 parallel FBGA48
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Braemac Americas-Symmetry	MB85R1002ABGT				1	1 $12.32 10 $12.32 100 $12.32 1000 $12.32 10000 $12.32	Buy Now

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MB85R1002A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MB85R1002ANC-GE1		Fujitsu	Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 150NS 48TSOP		Original	PDF

MB85R1002A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00006-3v0-E FRAM MB85R1002A MB85R1002A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,	Original	NP501-00006-3v0-E MB85R1002A MB85R1002A I/O16 FPT-48P-M48)	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K  16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00004-3v0-E MB85R1002A MB85R1002A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K  16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00004-3v0-E MB85R1002A MB85R1002A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-4v0-E Memory FRAM 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00004-4v0-E MB85R1002A MB85R1002A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-1v0-E Memory FRAM 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00004-1v0-E MB85R1002A MB85R1002A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-0v01-E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process	Original	DS501-00004-0v01-E MB85R1002A MB85R1002A	PDF
DS-501 Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-2v0-E Memory FRAM 1 M Bit 64 K  16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00004-2v0-E MB85R1002A MB85R1002A DS-501	PDF