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    MB85R1002A Price and Stock

    RAMXEED MB85R1002ANC-GE1

    IC FRAM 1MBIT PARALLEL 48TSOP
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    DigiKey MB85R1002ANC-GE1 Tray 128
    • 1 -
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    • 1000 $8.66594
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    Symmetry Electronics MB85R1002ANC-GE1 1
    • 1 $6.4
    • 10 $6.4
    • 100 $6.4
    • 1000 $6.4
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    KAGA FEI America Inc MB85R1002ANC-GE1

    F-RAM 1Mbit FeRAM (64k x16) parallel interface - TSOP48 tray
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    Mouser Electronics MB85R1002ANC-GE1 32
    • 1 $11.18
    • 10 $10.03
    • 100 $8.91
    • 1000 $7.86
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    FUJITSU Limited MB85R1002ANC-GE1

    SPECIALTY MEMORY CIRCUIT, PDSO48
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    Quest Components MB85R1002ANC-GE1 140
    • 1 $20.8643
    • 10 $20.8643
    • 100 $16.2278
    • 1000 $14.8368
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    FCL Ciomponents Limited MB85R1002ANC-GE1

    NVRAM FRAM Parallel 1MBit 33V 48Pin TSOPI (Alt: MB85R1002ANC-GE1)
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    EBV Elektronik MB85R1002ANC-GE1 15 Weeks 128
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    RAMXEED MB85R1002APFCN

    1Mbit FRAM x16 parallel TSOP48
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    Symmetry Electronics MB85R1002APFCN 1
    • 1 $11.08
    • 10 $11.08
    • 100 $11.08
    • 1000 $11.08
    • 10000 $11.08
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    MB85R1002A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB85R1002ANC-GE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 150NS 48TSOP Original PDF

    MB85R1002A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00006-3v0-E FRAM MB85R1002A MB85R1002A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		NP501-00006-3v0-E MB85R1002A MB85R1002A I/O16 FPT-48P-M48) PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K  16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		DS501-00004-3v0-E MB85R1002A MB85R1002A PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K  16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		DS501-00004-3v0-E MB85R1002A MB85R1002A PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-4v0-E Memory FRAM 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		DS501-00004-4v0-E MB85R1002A MB85R1002A PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-1v0-E Memory FRAM 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		DS501-00004-1v0-E MB85R1002A MB85R1002A PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-0v01-E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process


    Original     		DS501-00004-0v01-E MB85R1002A MB85R1002A PDF

    DS-501

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-2v0-E Memory FRAM 1 M Bit 64 K  16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process


    Original     		DS501-00004-2v0-E MB85R1002A MB85R1002A DS-501 PDF