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    KAGA FEI America Inc MB85R4001ANC-GE1

    IC FRAM 4MBIT PARALLEL 48TSOP
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    MB85R4001A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB85R4001ANC-GE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 4MBIT 150NS 48TSOP Original PDF

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    MB85R4001ANC-GE1

    Abstract: MB85R4001A IC TRAY
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-2v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS


    Original     		PDF DS501-00005-2v0-E MB85R4001A MB85R4001A MB85R4001ANC-GE1 IC TRAY

    MB85R4001A

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-0v01-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS


    Original     		PDF DS501-00005-0v01-E MB85R4001A MB85R4001A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00012-3v0-E FRAM MB85R4001A MB85R4001A is a 4M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,


    Original     		PDF NP501-00012-3v0-E MB85R4001A MB85R4001A FPT-48P-M01)

    MB85R4001A

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-1v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS


    Original     		PDF DS501-00005-1v0-E MB85R4001A MB85R4001A

    label

    Abstract: JEDEC TRAY DIMENSIONS - TSOP48
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-3v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS


    Original     		PDF DS501-00005-3v0-E MB85R4001A MB85R4001A label JEDEC TRAY DIMENSIONS - TSOP48

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-3v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS


    Original     		PDF DS501-00005-3v0-E MB85R4001A MB85R4001A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-4v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS


    Original     		PDF DS501-00005-4v0-E MB85R4001A MB85R4001A