Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BA100 Search Results

    SF Impression Pixel

    BA100 Price and Stock

    Skyworks Solutions Inc 510CBA100M000AAGR

    XTAL OSC XO 100.0000MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 510CBA100M000AAGR Digi-Reel 1,976 1
    • 1 $3.88
    • 10 $3.345
    • 100 $2.889
    • 1000 $2.60944
    • 10000 $2.60944
    Buy Now
    510CBA100M000AAGR Cut Tape 1,976 1
    • 1 $3.88
    • 10 $3.345
    • 100 $2.889
    • 1000 $2.60944
    • 10000 $2.60944
    Buy Now
    510CBA100M000AAGR Reel 1,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.175
    • 10000 $2.175
    Buy Now

    Cree, Inc. MLEAMB-A1-0000-000W01

    LED XLAMP MLE AMB 590NM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MLEAMB-A1-0000-000W01 Cut Tape 598 1
    • 1 $0.9
    • 10 $0.855
    • 100 $0.765
    • 1000 $0.6516
    • 10000 $0.6516
    Buy Now
    MLEAMB-A1-0000-000W01 Digi-Reel 598 1
    • 1 $0.9
    • 10 $0.855
    • 100 $0.765
    • 1000 $0.6516
    • 10000 $0.6516
    Buy Now
    Avnet Americas MLEAMB-A1-0000-000W01 Bag 4 Weeks 1,400
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.4636
    Buy Now
    Newark MLEAMB-A1-0000-000W01 Bulk 1,400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.747
    • 10000 $0.585
    Buy Now
    Avnet Silica MLEAMB-A1-0000-000W01 8 Weeks 1,400
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Skyworks Solutions Inc 510CBA100M000AAG

    XTAL OSC XO 100.0000MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 510CBA100M000AAG 442 1
    • 1 $2.71
    • 10 $2.342
    • 100 $2.71
    • 1000 $2.71
    • 10000 $2.71
    Buy Now

    Skyworks Solutions Inc 510BBA100M000BAG

    XTAL OSC XO 100.0000MHZ LVDS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 510BBA100M000BAG 264 1
    • 1 $5.7
    • 10 $4.915
    • 100 $5.7
    • 1000 $3.67336
    • 10000 $3.4602
    Buy Now
    Rochester Electronics 510BBA100M000BAG 188 1
    • 1 $4.3
    • 10 $4.3
    • 100 $4.04
    • 1000 $3.66
    • 10000 $3.66
    Buy Now

    Skyworks Solutions Inc 511DBA100M000AAG

    XTAL OSC XO 100.0000MHZ HCSL SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 511DBA100M000AAG 160 1
    • 1 $6.36
    • 10 $5.999
    • 100 $6.36
    • 1000 $4.545
    • 10000 $4.545
    Buy Now
    Rochester Electronics 511DBA100M000AAG 169 1
    • 1 $5.75
    • 10 $5.75
    • 100 $5.41
    • 1000 $4.89
    • 10000 $4.89
    Buy Now
    Richardson RFPD 511DBA100M000AAG 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    BA100 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA100 L-Com ADAPTOR BNC M/BNC M Original PDF
    BA100 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA100 Unknown SILICON DIODE Scan PDF
    BA100 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    BA100 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA100 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BA100 Unknown Cross Reference Datasheet Scan PDF
    BA100 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF

    BA100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original
    PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original
    PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    40101-001

    Abstract: NK4 RESISTOR RC21U 40101 BY cecc 40101-002 resistor color code nt4s vishay ny5 E192 RESISTOR NY4 100K
    Text: NK, NP, NT, NY Vishay Sfernice Precision Metal Film Resistors FEATURES • • • • • 0.063 W to 0.5 W at 70 °C Approved according to CECC 40101 Wide ohmic range from 1 Ω to 4.7 MΩ Good initial precision up to ± 0.1 % Operating temperatures: - 55 °C to + 155 °C for TCR ≥ 25 ppm/°C


    Original
    PDF 2002/95/EC 18-Jul-08 40101-001 NK4 RESISTOR RC21U 40101 BY cecc 40101-002 resistor color code nt4s vishay ny5 E192 RESISTOR NY4 100K

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original
    PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    0704M

    Abstract: E192 Series 1107M
    Text: MSP Vishay Sfernice Precision Surface Mount Resistors Wirewound or Metal Film Technologies FEATURES • Approved according CECC 40402-801 wirewound • Wide range of ohmic values (0.04 Ω to 1 MΩ) • Low temperature coefficient (± 25 ppm/°C available)


    Original
    PDF 18-Jul-08 0704M E192 Series 1107M

    MSP2B

    Abstract: 0704M
    Text: MSP Vishay Sfernice Precision Surface Mount Resistors Wirewound or Metal Film Technologies FEATURES • Approved according CECC 40402-801 wirewound  Wide range of ohmic values (0.04  to 1 M)  Low temperature coefficient (± 25 ppm/°C available)


    Original
    PDF 2002/95/EC 11-Mar-11 MSP2B 0704M

    AM1000

    Abstract: RS71Y RC21U rs58y nk5 vishay
    Text: NK, NP, NT, NY Vishay Sfernice Precision Metal Film Resistors FEATURES • 0.125 W to 0.5 W at 70 °C • • • • • • NFC 83-230/CECC 40 100 ESA-SCC 4001 LN2/GAM-T-1 Wide ohmic range from 1 Ω to 5.7 MΩ Good initial precision up to ± 0.1 % Operating temperatures:


    Original
    PDF 83-230/CECC 18-Jul-08 AM1000 RS71Y RC21U rs58y nk5 vishay

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original
    PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    ba100

    Abstract: No abstract text available
    Text: RMB, RMBS Vishay Sfernice Molded Precision Wirewound Resistors Axial Leads FEATURES • • • • • • • • • • 0.75 W to 3 W at 25 °C NF C 83-210 CECC 40201-005 Low temperature coefficient ≤ ± 50 ppm/°C Low ohmic values 15 mΩ available Excellent behavior against humidity


    Original
    PDF 18-Jul-08 ba100

    BA102

    Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
    Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for


    Original
    PDF TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original
    PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original
    PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original
    PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original
    PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    samsung ba92

    Abstract: BA137 k8p3215
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original
    PDF K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original
    PDF TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original
    PDF TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original
    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BA100 diode

    Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
    Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance


    Original
    PDF K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original
    PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    K8P6415UQB

    Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original
    PDF K8P6415UQB 047MAX 64-Ball 60Solder K8P6415UQB K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64

    BB121

    Abstract: No abstract text available
    Text: C31E6.pdf 01.5.29 This is the PDF file of catalog No.C31E-6 BLM18 Series 1608 Size 0.4±0.2 0.8±0.15 1 1.6±0.2 0.8±0.15 in mm Impedance (at 100MHz) (ohm) Rated Current (mA) DC Resistance(max.) (ohm) Operating Temperature Range (°C) BLM18AG121SN1 120 ±25%


    Original
    PDF C31E-6 C31E6 BLM18 BLM18AG121SN1 BLM18AG151SN1 BLM18AG221SN1 BLM18AG331SN1 BLM18AG471SN1 BLM18AG601SN1 BLM18AG102SN1 BB121

    BA100 diode

    Abstract: ba100 diode BA100
    Text: BA100 SILICON DIO DE G eneral purpose silicon diode in a subm iniature all g la ss DO-7 envelope. MECHANICAL DATA I Dimensions in mm not tinned CNI DO-7 o «• t k Cl • V ► t 25.4min u U , [I 25.4min 7 6 t o * y - 7ZQ065O J mln. m ounting width 13 The coloured band indicates the cathode side


    OCR Scan
    PDF BA100 BA100 diode ba100 diode BA100

    SC150C-60

    Abstract: SC100C-120 SC100C-60 SC100C-80 SC50C-60 SC50C-80 SC70C-100 SC70C-120 SC70C-40 SC70C-60
    Text: 13 - « Vgt V 1. 95 1. 95 1. 50 1. 50 1. 50 1. 50 1. 50 i . 60 1. 60 1. 60 1. 60 1. 60 1. 60 1. 60 1.60 1. 60 1. 60 1. 40 1.40 1. 45 1. 45 1. 45 1. 45 X. ‘i j 1. 40 1. 40 Tj c o 25 25 25 25 2b 25 2b 2b 2b 2b 25 2b 2b 2b 25 25 25 25 25 25 25 25 2b 0C 2b


    OCR Scan
    PDF SC50C-60 SC50C-80 SC70C-100 SC70C-120 H-101 SC150C-60 SC100C-120 SC100C-60 SC100C-80 SC50C-60 SC50C-80 SC70C-100 SC70C-120 SC70C-40 SC70C-60