ba37
Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
|
Original
|
PDF
|
K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
ba37
K8D1716U
K8D1716UBC
samsung nor flash
BA251
|
Untitled
Abstract: No abstract text available
Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended
|
Original
|
PDF
|
OneNAND256
KFG5616x1A-xxB6)
KFG5616Q1A-DEB6
67FBGA
KFG5616Q1A-PEB6
256Mb
48TSOP1
KFG5616D1A-DEB6
KFG5616D1A-PEB6
|
63FBGA
Abstract: KFG5616D1M-DEB KFG5616Q1M KFG5616Q1M-DEB KFG5616U1M-DIB 8017h
Text: OneNAND256 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND256 Part No. VCC core & IO Temperature PKG KFG5616Q1M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/48TSOP1 KFG5616D1M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/48TSOP1 KFG5616U1M-DIB 3.3V(2.7V~3.6V)
|
Original
|
PDF
|
OneNAND256
KFG5616Q1M-DEB
63FBGA
/48TSOP1
KFG5616D1M-DEB
KFG5616U1M-DIB
KFG5616D1M-DEB
KFG5616Q1M
KFG5616Q1M-DEB
KFG5616U1M-DIB
8017h
|
Untitled
Abstract: No abstract text available
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Draft Date Remark Initial Draft July 25, 2004 Advance Support 48TSOP1 Lead Free Package September 16, 2004 1 Revision 0.1
|
Original
|
PDF
|
K8D1716UTC
K8D1716UBC
48TSOP1
48-PIN
1220F
047MAX
|
1E49Ah
Abstract: Samsung nand MLC
Text: OneNAND256 KFG5616x1A-DEB5 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB5 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB5
|
Original
|
PDF
|
OneNAND256
KFG5616x1A-DEB5)
OneNAND256
KFG5616Q1A-DEB5
KFG5616D1A-DEB5
KFG5616U1A-DIB5
67FBGA
/48TSOP1
1E49Ah
Samsung nand MLC
|
F222
Abstract: No abstract text available
Text: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)
|
Original
|
PDF
|
OneNAND128
KFG2816Q1M-DEB
OneNAND128
KFG2816D1M-DEB
KFG2816U1M-DIB
67FBGA
/48TSOP1
F222
|
OneNAND
Abstract: SLC NAND endurance 100k KFG5616Q1A-DEB6 KFG5616Q1A-PEB6 KFG5616U1A-DIB6 KFG5616U1A-PIB6 mlc nand flash lsb msb r0400h
Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616U1A-DIB6 3.3V(2.7V~3.6V) Industrial
|
Original
|
PDF
|
OneNAND256
KFG5616x1A-xxB6)
KFG5616Q1A-DEB6
256Mb
67FBGA
KFG5616Q1A-PEB6
48TSOP1
KFG5616U1A-DIB6
KFG5616U1A-PIB6
OneNAND
SLC NAND endurance 100k
KFG5616Q1A-DEB6
KFG5616Q1A-PEB6
KFG5616U1A-DIB6
KFG5616U1A-PIB6
mlc nand flash lsb msb
r0400h
|
schematic lcd monitor samsung 18,5 inch
Abstract: SAMSUNG 256Mb NAND Flash Qualification Report oneNand flash oneNand SAMSUNG 256Mb NAND Flash Qualification Reliability 4GB MLC NAND NAND flash memory internal flash corruption KFG5616Q1A-DEB5 mlc nand flash lsb msb
Text: OneNAND256 KFG5616x1A-xxB5 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB5 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616U1A-DIB5 3.3V(2.7V~3.6V) Industrial
|
Original
|
PDF
|
OneNAND256
KFG5616x1A-xxB5)
KFG5616Q1A-DEB5
256Mb
67FBGA
KFG5616Q1A-PEB5
48TSOP1
KFG5616U1A-DIB5
KFG5616U1A-PIB5
schematic lcd monitor samsung 18,5 inch
SAMSUNG 256Mb NAND Flash Qualification Report
oneNand flash
oneNand
SAMSUNG 256Mb NAND Flash Qualification Reliability
4GB MLC NAND
NAND flash memory
internal flash corruption
KFG5616Q1A-DEB5
mlc nand flash lsb msb
|
BA17
Abstract: K8D3216UT K8D3216
Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package
|
Original
|
PDF
|
K8D3x16UTC
K8D3x16UBC
48TSOP1
16M/16M
48FBGA
08MAX
BA17
K8D3216UT
K8D3216
|
Untitled
Abstract: No abstract text available
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
|
Original
|
PDF
|
K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
|
BA37
Abstract: ba37 diode K8D1716UBC 48FBGA K8D1716U K8D1716UTC samsung nor flash BA2411 150us
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
|
Original
|
PDF
|
K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
BA37
ba37 diode
K8D1716UBC
K8D1716U
samsung nor flash
BA2411
150us
|
48FBGA
Abstract: BGA24 ba3101 BA4910 ba4410 BA4111
Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package
|
Original
|
PDF
|
K8D3x16UTC
K8D3x16UBC
48TSOP1
16M/16M
48FBGA
08MAX
BGA24
ba3101
BA4910
ba4410
BA4111
|
Untitled
Abstract: No abstract text available
Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package
|
Original
|
PDF
|
K8D3x16UTC
K8D3x16UBC
48TSOP1
16M/16M
047MAX
|
samsung toggle mode NAND
Abstract: Samsung MLC cq 724 g diode Samsung nand MLC mlc nand flash lsb msb Samsung Electronics. NAND flash memory toggle mode nand samsung "NAND Flash" samsung dual lcd samsung lcd monitor power supply circuit diagram
Text: OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V) Industrial 67FBGA(LF)/48TSOP1 Version: Ver. 1.1 Date: Dec. 23, 2005
|
Original
|
PDF
|
OneNAND128
KFG2816Q1M-DEB
67FBGA
/48TSOP1
KFG2816U1M-DIB
047MAX
samsung toggle mode NAND
Samsung MLC
cq 724 g diode
Samsung nand MLC
mlc nand flash lsb msb
Samsung Electronics. NAND flash memory
toggle mode nand samsung
"NAND Flash"
samsung dual lcd
samsung lcd monitor power supply circuit diagram
|
|
|
tsop1748
Abstract: onenand block map onenand Flash Memory SAMSUNG OneNAND
Text: OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)
|
Original
|
PDF
|
OneNAND128
KFG2816Q1M-DEB
67FBGA
/48TSOP1
KFG2816D1M-DEB
KFG2816U1M-DIB
tsop1748
onenand block map
onenand
Flash Memory SAMSUNG OneNAND
|
Untitled
Abstract: No abstract text available
Text: K8D3x16UTC / K8D3x16UBC NOR FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package
|
Original
|
PDF
|
K8D3x16UTC
K8D3x16UBC
48TSOP1
16M/16M
48FBGA
200ns.
08MAX
|
SLC NAND endurance 100k years
Abstract: 802AH
Text: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)
|
Original
|
PDF
|
OneNAND128
KFG2816Q1M-DEB
OneNAND128
KFG2816D1M-DEB
KFG2816U1M-DIB
67FBGA
/48TSOP1
SLC NAND endurance 100k years
802AH
|
Untitled
Abstract: No abstract text available
Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package
|
Original
|
PDF
|
K8D3x16UTC
K8D3x16UBC
48TSOP1
16M/16M
047MAX
|
onenand
Abstract: No abstract text available
Text: OneNAND256 KFG5616x1A-xxB5 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB5 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB5 2.65V(2.4V~2.9V) Extended
|
Original
|
PDF
|
OneNAND256
KFG5616x1A-xxB5)
KFG5616Q1A-DEB5
256Mb
67FBGA
KFG5616Q1A-PEB5
48TSOP1
KFG5616D1A-DEB5
KFG5616D1A-PEB5
onenand
|
Untitled
Abstract: No abstract text available
Text: OneNAND256 KFG5616x1A-DEB6 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB6
|
Original
|
PDF
|
OneNAND256
KFG5616x1A-DEB6)
OneNAND256
KFG5616Q1A-DEB6
KFG5616D1A-DEB6
KFG5616U1A-DIB6
67FBGA
/48TSOP1
|
Untitled
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
|
Original
|
PDF
|
K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
|
HY27UF082G2A
Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
Text: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
|
Original
|
PDF
|
HY27UF
256Mx8bit/128Mx16bit)
HY27UF082G2A
HY27UF162G2A
HY27UF082G2A
HY27UF162G2A
hy27uf082G
hy27uf082
52-ULGA
hynix nand 2G
hynix nand flash 2gb
hynix nand
hynix nand spare area
|
mask rom
Abstract: No abstract text available
Text: KM23V32005D E TY/KM23S32005D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V/3.0V Operation : 100/30ns(Max.)
|
Original
|
PDF
|
KM23V32005D
TY/KM23S32005D
32M-Bit
/2Mx16)
304x8
152x16
100/30ns
150/50ns
KM23S32005D
mask rom
|
Untitled
Abstract: No abstract text available
Text: KM23V32000D E TY/KM23S32000D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.)
|
Original
|
PDF
|
KM23V32000D
TY/KM23S32000D
32M-Bit
/2Mx16)
304x8
152x16
100ns
150ns
KM23S32000D
|