TT 2222 NPN Search Results

TT 2222 NPN Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

TT 2222 NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BF520 Abstract: ic TT 2222 100mA-1A ZTX114 Text: ZTX1049A NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES • VCEV = 80V • Very low saturation voltages • High gain • 20 amps pulse current APPLICATIONS • LCD backlight converters E-Line • Emergency lighting • DC-DC converters PINOUT	Original	ZTX1049A BF520 ic TT 2222 100mA-1A ZTX114	PDF
Untitled Abstract: No abstract text available Text: 35E D • fl23b32Q GG1722S ö M S I P PNP Silicon Switching Transistors SIEM ENS/ S P C L i • • • SMBT2907 SEMIC0N] S ' High DC current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: SMBT 2222, SMBT 2222 A NPN) C Type	OCR Scan	fl23b32Q GG1722S SMBT2907 Q68000-A4336 Q68000-A4337 Q68000-A6501 Q68000-A6474 1/CE-20V 23b32Q A23b32G	PDF
BFG135 power amplifier for 900Mhz Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated	OCR Scan	BFG135 OT223 711Qfl2ti 7110fl2b BFG135 BFG135 power amplifier for 900Mhz BFG135 amplifier BFG135 A amplifier BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz	PDF
transistor tt 2222 Abstract: smd 809 x transistor transistor SMD S33 Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures	OCR Scan	0DSfl737 BLT50 OT223 bbS3R31 0DS87M3 transistor tt 2222 smd 809 x transistor transistor SMD S33	PDF
BLU60/28 Abstract: No abstract text available Text: L.5E D PHILIPS INTERNATIONAL • 711002b OObSTST 125 l B LU 6 0 /2 8 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile	OCR Scan	711002b BLU60/28 BLU60/28 OT119) 00bE7bS	PDF
BLW40 Abstract: MCD205 TLO 721 Text: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification	OCR Scan	711065b 00b3535 BLW40 OT120 PINNING-SOT120 BLW40 MCD205 TLO 721	PDF
resistor BJE Abstract: No abstract text available Text: _U _ N A HER PHILIPS/DISCRETE b'JE D bbSS^Sl DDET317 063 « A P X BLW33 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation	OCR Scan	DDET317 BLW33 resistor BJE	PDF
philips carbon film resistor Abstract: blw98 transistor carbon resistor BLW98 Text: N AMER PHILIPS/DISCRETE bTE D □ DS'iSBS ‘ibD BLW98 b b S B 'm IAPX A U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.	OCR Scan	BLW98 bb53131 philips carbon film resistor blw98 transistor carbon resistor BLW98	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE ]> b b s a ^ l □□2883'! 3bl I IAPX BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features	OCR Scan	BLU45/12 OT-119 BLU45/12	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b 'lE b b S B 'm » DD2flfl7b E3^ BLU97 ; v U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.	OCR Scan	BLU97 OT122A) bb53T31	PDF
BLY93C Abstract: RF POWER TRANSISTOR NPN vhf 77530 capacitor Text: 7 1 1 0 8 2 ti D 0 t.3 t.M7 417 « P H I N bSE D BLY93C P H IL I P S I N T E R N A T I O N A L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transm itters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is	OCR Scan	711082ti BLY93C 59-j54 OT-120. BLY93C RF POWER TRANSISTOR NPN vhf 77530 capacitor	PDF
transistor tt 2222 Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5 Text: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power	OCR Scan	BLW29 BFQ42 bb531Bl 7Z77586 7Z77587 transistor tt 2222 9 BJE 53 mj 1504 transistor mj 1504 BLW29 tt 2222 transistor l5	PDF
transistor tt 2222 Abstract: MH-1993 BLW80 J2251 TT 2222 IEC134 Text: PHILIPS INTERNATIONAL bSE D • 711005b 0DL3313 3R1 ■ PHIN BLW80 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transm itting applications in class-A, B o r C in the u.h.f. and v.h.f. range fo r nominal supply voltages up to 13,5 V.	OCR Scan	711005b 0DL3313 BLW80 transistor tt 2222 MH-1993 BLW80 J2251 TT 2222 IEC134	PDF
transistor tt 2222 Abstract: ic TT 2222 BLW 89 blw89 transistor Text: PHILIPS INTERNATIONAL bSE D m 7110fl5b GübBB?'! EÔ4 PHIN BLW 89 J \ _ U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and	OCR Scan	7110fl5b GDb33 BLW89 711002b 00b33 transistor tt 2222 ic TT 2222 BLW 89 blw89 transistor	PDF

MCA45T Abstract: capacitor philips ll Text: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile	OCR Scan	711002b BLU30/28 BLU30/28 OT119) 711Dfl5b 0Db2735 MCA45T capacitor philips ll	PDF
TT 2222 Abstract: No abstract text available Text: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile	OCR Scan	btiS3T31 OT-119) BLV45/12 TT 2222	PDF
transistor IR 840 Abstract: TRANSISTOR RF -PT 4555 BLV193 Philips CT6 power transistor UHF POWER TRANSISTOR MRA553 MRA554 Text: Philips Semiconductors 711005b 0Qb312? 014 IPHIN Product specification BLV193 UHF power transistor PHILIPS INTERN ATI ON AL FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION	OCR Scan	711005b 0Qb312? BLV193 OT171 PINNING-SOT171 VBA451 transistor IR 840 TRANSISTOR RF -PT 4555 BLV193 Philips CT6 power transistor UHF POWER TRANSISTOR MRA553 MRA554	PDF
BLU60/12 Abstract: 81 210 w 25 is which transistor transistor tt 2222 2222-809-05002 ferroxcube wideband hf choke Text: N AUER PHILIPS/DISCRETE b^E D • bbSB'iBl DD2ÔÔ54 b?fl * A P X BLU60/12 U.H.F. POW ER TRA N SISTO R N-P-N silicon planar epitaxial transistor in SO T-119 envelope primarily Intended for use in mobile radio transmitters in the 470 M H z communications band.	OCR Scan	OT-119 7Z93527 BLU60/12 81 210 w 25 is which transistor transistor tt 2222 2222-809-05002 ferroxcube wideband hf choke	PDF
D2C17 Abstract: BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf Text: N AMER P H I L I P S / D I S C R E T E bTE T> • ^ 53^31 T 1 3 ■ APX 002*1732 A BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran	OCR Scan	BLY92C OT-120. 7Z68949 D2C17 BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf	PDF
BLX98 Abstract: BLX97 transistor TT 2222 WE VQE 11 E WE VQE 24 E BLX96 IEC134 Philips film capacitors 27 pf BLX-97 multi-emitter transistor Text: N AMER P H I L I P S / D I S C R E T E M A I N T E N A N C E T YPE b^E D b b S 3 T 31 II • 0 D S T b 5 1 T T 4 ■ APX B L X 96 U.H.F. LINEAR PO W ER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for	OCR Scan	0DSTb51 BLX96 7z72543 BLX98 BLX97 transistor TT 2222 WE VQE 11 E WE VQE 24 E BLX96 IEC134 Philips film capacitors 27 pf BLX-97 multi-emitter transistor	PDF
2n5088 transistor Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n5088 transistor SL 100 NPN Transistor	PDF
2N2217 Abstract: KH 2222 ic TT 2222 ip 2222A 2N2218 Text: TYPES 2N2217 THRU 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 7 3 1 1 9 1 6 , M A R C H 197 3 DESIGN ED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND G EN ER A L PURPOSE A M PLIFIER APPLICATIONS • hFE •• ■Guaranteed from 100 n A to 500 mA	OCR Scan	2N2217 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A 2N2222A) 2N2218, 2N2221 KH 2222 ic TT 2222 ip 2222A 2N2218	PDF
smd code HF transistor Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN Text: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.	OCR Scan	71IDflgb BLU86 OT223 OT223 smd code HF transistor TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN	PDF
BLW77 Abstract: neutralization push-pull philips Trimmer 60 pf Text: PHILIPS bSE » INTERNATIONAL • 7110öSb D0b3277 SSO IPHIN BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am	OCR Scan	D0b3277 BLW77 7110flSh 7Z77473 7Z77475 BLW77 neutralization push-pull philips Trimmer 60 pf	PDF

TT 2222 NPN Search Results

TT 2222 NPN Result Highlights (5)

TT 2222 NPN Datasheets Context Search

BF520

Untitled

BFG135 power amplifier for 900Mhz

transistor tt 2222

BLU60/28

BLW40

resistor BJE

philips carbon film resistor

Untitled

Untitled

BLY93C

transistor tt 2222

transistor tt 2222

transistor tt 2222

MCA45T

TT 2222

transistor IR 840

BLU60/12

D2C17

BLX98

2n5088 transistor

2N2217

smd code HF transistor

BLW77