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    siemens 250 87

    Abstract: No abstract text available
    Text: 32E D • A23b32G 001724^ □ « S I P PIMP Silicon Transistors SIEMENS/ SPCL-, SEMICONDS _ • For A F input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Low noise between 30 Hz and 15 kHz


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    PDF A23b32G 23b320 0G17254 siemens 250 87

    BCX70J

    Abstract: No abstract text available
    Text: BEE D • ÔS3h3B0 0Q3.bb?ä ? ISIP. NPN Silicon AF Transistors SIEMENS/ SPCLi SEMICONDS BCW 60 BCX 70 T-3^-17 • • • • • For AF input stages and driver applications High current gain Low coilector-em itter saturation voltage Low noise between 30 Hz and 15 kHz


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    PDF A23b32G BCW60 BCX70 102kHz BCX70J

    Untitled

    Abstract: No abstract text available
    Text: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance


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    PDF 23b3S0 QQ17177 BSS192 -240V Q62702-S602 23b320 T-37-25 80f/a;

    RTM 866 - 485

    Abstract: No abstract text available
    Text: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF 023ti32Q BFP93A 62702-F OT-143 RTM 866 - 485

    Untitled

    Abstract: No abstract text available
    Text: TT 3EE D • Ö23b320 OOlbSöl 3 ISIP BB 811 Silicon Tuning Diode SIEMENS/ SPCL-. SEMICONDS _ T—07—16 C a th o d e • Frequency range up to 2 GHz; special design for use in TV-sat indoor units Type M arking O rdering code taped Package BB 811 white/T.


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    PDF 23b320 Q62702-B478 D-123 A23b32G T-07-16

    Untitled

    Abstract: No abstract text available
    Text: 35E D • fl23b32Q GG1722S ö M S I P PNP Silicon Switching Transistors SIEM ENS/ S P C L i • • • SMBT2907 SEMIC0N] S ' High DC current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: SMBT 2222, SMBT 2222 A NPN) C Type


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    PDF fl23b32Q GG1722S SMBT2907 Q68000-A4336 Q68000-A4337 Q68000-A6501 Q68000-A6474 1/CE-20V 23b32Q A23b32G

    Untitled

    Abstract: No abstract text available
    Text: 32E D • fi23b32Q QOlbSlb 3 » S I P Silicon Switching Diodes T '0 2 -U BAS 78A. BAS 78D _ SIEMENS/ SPCL-, SEMICONDS _ • Switching applications • High breakdown voltage Type M arking O rdering co d e 12-m m tape Package* BAS 78A


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    PDF fi23b32Q Q62702 OT-223 BAS78D

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 623b320 QDlblSl T « S I P NPN Silicon RF Transistor o , .t-. BFQ 29P SIEMENS/ SPCLi SEMICONDS _ • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. £ CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF 623b320 BFQ29P 62702-F OT-23 /o-20m

    Untitled

    Abstract: No abstract text available
    Text: 35E D • 023b3SG NPN Silicon RF Transìstor 0Q lbflñ3 & « S IP BFP 81 _SIEMENS/ SPCLi SEMICONDS f-3<- 1*7_ • For low-noise amplifiers up to 2 GHz at collector currents from 0.5 to 25 mA. S CECC-type In preparation: CECC 50002/. ESD : Electrostatic discharge sensitive device, observe handling precautions!


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    PDF 023b3SG 62702-F1 OT-143 -J250