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transistor tt 2222 Abstract: MH-1993 BLW80 J2251 TT 2222 IEC134 Contextual Info: PHILIPS INTERNATIONAL bSE D • 711005b 0DL3313 3R1 ■ PHIN BLW80 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transm itting applications in class-A, B o r C in the u.h.f. and v.h.f. range fo r nominal supply voltages up to 13,5 V.	OCR Scan	711005b 0DL3313 BLW80 transistor tt 2222 MH-1993 BLW80 J2251 TT 2222 IEC134	PDF
Contextual Info: ooozavme A3d sogt diAiv 3 L A3d JO L I33HS L :8 ONIMVdQ d3IA\|0_LSn3 31V3S Of I L S b 01 CG13ldlS3d LV 6LL00 ON ONIMVda 03dS NOIlVOUddV Z Z f L—80 L 03ds lonao^d 3kNVN UOI^DJOdjOQ S O IU O jp 9 \| 3 ddannN IdVd 1 0t17 1 1 u 1 t 0 /_t 1 Z/_ 0 Z7 U 1v V _ SOIUQJJOe/3	OCR Scan	I33HS 31V3S CG13ldlS3d 6LL00 0dl3313	PDF

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transistor tt 2222

Abstract: MH-1993 BLW80 J2251 TT 2222 IEC134
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711005b 0DL3313 3R1 ■ PHIN BLW80 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transm itting applications in class-A, B o r C in the u.h.f. and v.h.f. range fo r nominal supply voltages up to 13,5 V.

OCR Scan

711005b 0DL3313 BLW80 transistor tt 2222 MH-1993 BLW80 J2251 TT 2222 IEC134

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Contextual Info: ooozavme A3d sogt diAiv 3 L A3d JO L I33HS L :8 ONIMVdQ d3IA|0_LSn3 31V3S Of I L S b 01 CG13ldlS3d LV 6LL00 ON ONIMVda 03dS NOIlVOUddV Z Z f L—80 L 03ds lonao^d 3kNVN UOI^DJOdjOQ S O IU O jp 9 | 3 ddannN IdVd 1 0t17 1 1 u 1 t 0 /_t 1 Z/_ 0 Z7 U 1v V _ SOIUQJJOe/3

OCR Scan

I33HS 31V3S CG13ldlS3d 6LL00 0dl3313

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