TRC 1003 Search Results

KM428C128

Abstract: 428C128 256X8 CMOS RAM 428-C KM428C128-6
Contextual Info: r PRELIMINARY v KM428C128 CMOS VIDEO RAM 1 28K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance - Speed Parameter RAM access tim e tRAc RAM access tim e (tcAc) RAM cycle tim e (tRc)

Contextual Info: CMOS DRAM KM416C1OOOA/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC KM416C1000A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1OOOA-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns

Contextual Info: KM416C1OOOA/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC 60ns 15ns 110ns KM416C1000A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns 150ns KM416C1000A-6/A-L6/A-F6

KM68B1003

Contextual Info: K M 64B 1003 \0 SAMSUNG ELECTRONICS 262,144 WORD X 4 Bit With ÜE APRIL 1992 GENERAL DESCRIPTION FEATURES The KM64B1003 is a 1,048,576-bit high­ speed static random access memory or­ ganized as 262,144 words by 4 bit. The KM64B1003 uses four common input

HY5116400A

Contextual Info: HY5 1 1 6 4 0 0 A S e r ie s •{H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

hy534256s

Abstract: pin diagram of ic 7493 HY534256 HY534256J circuit diagram of ic 7493 INTERNAL DIAGRAM OF IC 7493
Contextual Info: HYUNDAI HY534256 Series SEMICONDUCTOR 256K X 4-bit CMOS DRAM DESCRIPTION The HY534256 is the new generation and fast dynamic RAM organized 262,144 x 4-bits. The HY534256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

hy5118160b

Abstract: HY5118160BTC60 HY5118160BJC60 HY5118160BJC HY5118160BTC SDIS5 HYUNDAI car HY5118160BTC-60 5118160BJ HY5118160
Contextual Info: HY5118160B Series •HYUNDAI 1 M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynam ic RAM organized 1,048.576 x 16-bit. The HY5118160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

HM401

Abstract: BSC MML command
Contextual Info: .uv ii y n Ai HY51V17400A Series 4M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400Ais the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: »HYUNDAI HY514400B Series 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

0170R

Abstract: MC-422000A36BJ-80 MC422000A36FJ70 MC-422000A36FJ-80 MC-422000A36FJ MC-422000A36BJ MC-422000A36FJ-70
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-422000A32 series is a 2 097 152 w ords by 32 bits dynam ic RAM m odule on which 16 pieces of

Contextual Info: 51C64L LOW POWER 64K X 1 CHMOS DYNAMIC RAM 51C64L-10 51C64L-12 Maximum Access Time ns 100 120 Maximum CHMOS Standby Current (mA) 0.05 0.05 • Low Power Data Retention ■ Fully TTL Compatible Inputs and Outputs — S tandby current, C HM O S — 50/*A (m ax.)

HYUNDAI i10

Abstract: HY514260B MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3
Contextual Info: H Y 5 1 4 2 6 0 B S e r ie s 256K x 16-bit CMOS DRAM with 2CAS ‘ • H Y U N D A I DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access

Z80 CPU PHYSICAL DIMENSIONS LCC

Abstract: z8400a z80acpu TDA 120S Z80A CPU Z80A-CPU Zilog Z80A CPU TDA 2025
Contextual Info: ZILOG INC DB dË | TTñUDMB DODflSMa 5 J~~ 9 9 8 4 0 4 3 Z I L O G INC 03E 0 8 2 4 2 Z8400 Military Z80 CPU Central Processing Unit 17; | ¿• U O y D ~r-W -n-oi Military Electrical Specification July 1985 FEATURES ■ The instruction set contains 158 instructions. The 78

Contextual Info: NT1GD72S4PC0FV/NT2GD72S4NCOFV 1GB: 128M x 72 / 2GB: 256M x 72 Low Profile Registered DDR SDRAM DIMM 184pin Low Profile Registered DDR SDRAM DIMM Based on 128Mx4 DDR SDRAM C Die device Features • 184 Dual In-Line Registered Memory Module RDIMM • Registered DDR DIMM based on 90nm 512Mb Die C device

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE D escription The MC-422000A32 series is a 2 097 152 w ords by 32 bits dynam ic RAM m odule on which 16 pieces of

pw3sd

Contextual Info: - H Y U N D A HY514403B Series I 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,

RAU27

Abstract: rau2
Contextual Info: "HYUNDAI HY51V4264B Series 256K x 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V42648 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CM O S process technology and advanced circuit design technique to achieve fast

IC 1496 function

Contextual Info: IBM11S2360NN IBM11S2360NL 2M x 36 SODIMM Module Features • 7 2 -P in S m all O utline D ual-In -Lin e M e m o ry M o du le • Perform ance: I rac RAS Access Time All inputs & outputs a re T T L & C M O S com patible Fast P a g e M o d e a c c e ss cycle

rb414

Abstract: KM44C1003
Contextual Info: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power

nec 424800

Abstract: ic 2716 ic2716 PD42S4800-70 424800-10 424800-80 TXXXXXXXXXX
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 4 8 0 0 , 4 2 4 8 0 0 4 M -BIT D Y N A M IC R A M 512 K -W O R D B Y 8-BIT, F A S T P A G E M O D E D e s c rip tio n The /¿PD42S4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAMs. The fast page mode capability

Contextual Info: 51C65H HIGH PERFORMANCE STATIC COLUMN 64K X 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) • Static Column Mode Operation 51C65H-10 51C65H-12 100 120 55 65 ■ Fast “ Usable Speed’’ — C ontinuou s data rate ov e r 15 M H z

Contextual Info: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362203CW /CWG to KMM5362203C2W /C2W G caused by PCB revision .

uc07

Contextual Info: •HYUNDAI H Y 5 1 4 4 0 0 A S e r ie s IM X 4-bit CM O S DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating