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    RAU2 Search Results

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    RAU2 Price and Stock

    u-blox AG SARA-U260-00S-02

    RF TXRX MODULE CELL 3G AT&T SMD
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    DigiKey SARA-U260-00S-02 Cut Tape 594 1
    • 1 $55.68
    • 10 $41.76
    • 100 $29.0001
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    SARA-U260-00S-02 Reel 500 250
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    u-blox AG SARA-U260-00S

    RF TXRX MODULE CELLULAR 3G AT&T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SARA-U260-00S Cut Tape 118 1
    • 1 $55.68
    • 10 $41.76
    • 100 $29.0001
    • 1000 $29.0001
    • 10000 $29.0001
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    u-blox AG SARA-U201-03X

    RF TXRX MODULE CELL SMD
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    DigiKey SARA-U201-03X Bulk
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    u-blox AG SARA-U280-00S

    RF TXRX MODULE CELL SMD
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    DigiKey SARA-U280-00S Reel 250
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    • 1000 $27.00012
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    u-blox AG SARA-U201-03B

    RF TXRX MODULE CELL SMD
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    DigiKey SARA-U201-03B Reel
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    SARA-U201-03B Digi-Reel 1
    • 1 $79.49
    • 10 $79.49
    • 100 $79.49
    • 1000 $79.49
    • 10000 $79.49
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    SARA-U201-03B Cut Tape
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    Win Source Electronics SARA-U201-03B 1,299
    • 1 -
    • 10 $31.0715
    • 100 $27.8572
    • 1000 $27.8572
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    Find more RAU2 price and stock on Findchips.com

    RAU2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DS92UT16 DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers Literature Number: SNOS992D July 19, 2011 DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers 1.0 General Description The DS92UT16 is a flexible UTOPIA to LVDS Bridge device.


    Original     		PDF DS92UT16 DS92UT16TUF SNOS992D DS92UT16TUF DS92UT16

    2TC47

    Abstract: BGA196 BIP-16 uaa 180 DS92UT16 DS92UT16TUF NUJB0196 TC21 intel AT 89 INSTRUCTION SET UAA 190
    Text: DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers 1.0 General Description The DS92UT16 is a flexible UTOPIA to LVDS Bridge device. The LVDS Bridge transparently transports the UTOPIA bus over a high speed LVDS serial link. The device includes


    Original     		PDF DS92UT16TUF DS92UT16 DS92UT16TUF 2TC47 BGA196 BIP-16 uaa 180 NUJB0196 TC21 intel AT 89 INSTRUCTION SET UAA 190

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE DS92UT16 www.ti.com SNOS992E – JANUARY 2002 – REVISED APRIL 2013 DS92UT16 UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers Check for Samples: DS92UT16 FEATURES 1 • 23 • 832 Mbps LVDS 16-bit Serializer and Deserializer Interface


    Original     		PDF DS92UT16 SNOS992E DS92UT16 16-bit

    DS92UT16

    Abstract: DS92UT16TUF NUJB0196 TC21
    Text: DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers 1.0 General Description The DS92UT16 is a flexible UTOPIA to LVDS Bridge device. The LVDS Bridge transparently transports the UTOPIA bus over a high speed LVDS serial link. The device includes


    Original     		PDF DS92UT16TUF DS92UT16 DS92UT16TUF NUJB0196 TC21

    DS92UT16

    Abstract: DS92UT16TUF NUJB0196 TC21 BGA196 TC55 Series
    Text: DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers 1.0 General Description The DS92UT16 is a flexible UTOPIA to LVDS Bridge device. The LVDS Bridge transparently transports the UTOPIA bus over a high speed LVDS serial link. The device includes


    Original     		PDF DS92UT16TUF DS92UT16 DS92UT16TUF NUJB0196 TC21 BGA196 TC55 Series

    RAU2-X-109117-N

    Abstract: RAU2-X-107117-N miteq LCL-RAU2
    Text: FEATURES • • • • • • • • Low amplifier noise temperature Fully redundant power supplies Remote control via RS485 Automatic/manual control from both local and remote mode Remote status Off-line input/output access Amplifier current fault detection


    Original     		PDF RS485 RS422, RS232, IEEE-488 25T011. 25T012. D-128C RAU2-X-109117-N RAU2-X-107117-N miteq LCL-RAU2

    M-phy Differential peak-to-peak output voltage

    Abstract: A3838
    Text: January 2002 DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers 1.0 General Description The DS92UT16 is a flexible UTOPIA to LVDS Bridge device. The LVDS Bridge transparently transports the UTOPIA bus over a high speed LVDS serial link. The device includes


    Original     		PDF DS92UT16TUF DS92UT16 248English M-phy Differential peak-to-peak output voltage A3838

    rau2

    Abstract: 1A011
    Text: HY5116160 Series -HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116160 16-bit 16-bit. Y5116160 1AD11-10-MAY95 HY5116160JC HY5116160SLJC rau2 1A011

    RAU27

    Abstract: rau2
    Text: "HYUNDAI HY51V4264B Series 256K x 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V42648 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CM O S process technology and advanced circuit design technique to achieve fast


    OCR Scan     		PDF HY51V4264B 16-bit HY51V42648 400mil 40pin 4Q/44pin 08mWFLB_ 1AC30-10-MAY95 RAU27 rau2

    T23N

    Abstract: au1017 4100 dram HYS14400 IPC 4104
    Text: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability


    OCR Scan     		PDF 4b750Ã DG0Q333 HY514400 HYS14400 M1A1200A-MAY91 -23-n FEA11 T23N au1017 4100 dram IPC 4104

    HY5118164B

    Abstract: HY5118164BJC60 HY5118164BJC V074 HY5118164BSLRC JD 16 CFt 450 HT
    Text: • • H Y U N D A I H Y 5 1 1 8 1 6 4 B S e r ie s 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5118164B 16-bit. Q1480C3 0JJ00 1AD58-10-MA HY5118164BJC HY5118164BJC60 V074 HY5118164BSLRC JD 16 CFt 450 HT

    19N80

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 V 1 6 1 0 0 A S e r ie s 16M X 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V16100A 127BSC 1AD21-00-MAY95 HY51V16100AJ 6100A HY51V16100AT HY51V16100ASLT 19N80

    WP-13

    Abstract: ta22a DE456 1A039
    Text: Y Trt I II N i l A l u n u m 4M X H Y 5 1 V 1 6 4 0 4 A S e r ie s 4-bit CMOS DRAM with Extended Data out DESCRIPTION The HY51V16404A is the new generation and fast dynamic RAM organized 4,194.304 x 4-bit. The HY51V16404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16404A capa590) 1AD39-KMMAY95 HY51V16404AJ HY51V16404ASLJ HY51V16404AT 51V16404ASLT WP-13 ta22a DE456 1A039

    W41J

    Abstract: IPC 4104
    Text: HYUNDAI ELECTRONICS 3RE D • 4b7S0öö DG00333 T ■ HYNK PRELIMINARY M1A1200A-MAY91 FEATURES DESCRIPTION • Low power dissipation - Operating Current, 100ns : 85mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lntA(max.) • Read-Modify-Write Capability


    OCR Scan     		PDF DG00333 M1A1200A-MAY91 HY514400 HY514400. 512KX W41J IPC 4104

    Ck37

    Abstract: No abstract text available
    Text: • « H Y U N D A I H Y 5 1 4 4 0 0 A S e r ie s 1 Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A families075 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT 4400ALT Ck37

    HYUNDAI i10

    Abstract: HY514260B MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3
    Text: H Y 5 1 4 2 6 0 B S e r ie s 256K x 16-bit CMOS DRAM with 2CAS ‘ • H Y U N D A I DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access


    OCR Scan     		PDF HY514260B 16-bit 400mil 40pin 40/44pin 0063BJ10) 4b750aa HYUNDAI i10 MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3