KM64B1003 Search Results

P2SC

Contextual Info: KM64B1003 BiCMOS SRAM 256K x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) Operating KM64B1003 - 8 : 165fflA(Max.) KM64B1003 - 1 0 : 15SmA(Max.)

Contextual Info: KM64B1003 BiCMOS SRAM 256Kx4 Bit With UE High-Speed BiCMOS Static RAM The KM 64B1003 is a1,048,576-bit high-speed static random access memory organized as 262,144 words by 4 bits. The KM 64B1003 uses four com m on input and output lines and has an output enable pin w hich operates

KM64B1003J-10

Abstract: KM64B1003J-12 KM64B1003J-15
Contextual Info: KM64B1003 BiCMOS SRAM 256Kx4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(max.) (CMOS): 10mA(max.) Operating KM64B1003J- 8: 165 mA(Max.) KM64B1003J-10: 155 mA(Max.)

KM68B1003

Contextual Info: K M 64B 1003 \0 SAMSUNG ELECTRONICS 262,144 WORD X 4 Bit With ÜE APRIL 1992 GENERAL DESCRIPTION FEATURES The KM64B1003 is a 1,048,576-bit high­ speed static random access memory or­ ganized as 262,144 words by 4 bit. The KM64B1003 uses four common input

Contextual Info: KM64B1003 BiCMOS SRAM 256Kx4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(max.) (CMOS): 10mA(max.) Operating KM64B1003J- 8:165 mA(Max.) KM64B1003J-10:155 mA(Max.)

Contextual Info: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CM O S): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)

Contextual Info: PRELIMINARY KM64B1003 BiCMOS SRAM 262,144 WORD X 4 Bit With OE FEATURES GENERAL DESCRIPTION • Fast A cc e s s Tim e: 10, 12ns (m ax.) • Low P o w er D issipation S tandb y (TTL) : 60m A (m ax.) (C M O S): 10m A (m ax.) T h e K M 6 4 B 1 0 0 3 is a 1 ,0 48,576-bit h ig h -s p e e d S ta tic

KM64B1003J-10

Abstract: KM64B1003J-12 KM64B1003J-15
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • VTbHme □□17tti2 DbS SMGK KM64B1003_ BiCMOS SRAM 262,144 WORD X 4 Bit With ÖE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.)

pin diagram of 7414

Abstract: KM64B1003J-10 KM64B1003J-12 KM64B1003J-15 pin 7 diagram of 7414
Contextual Info: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)

Contextual Info: KM64B1003 BiCMOS SRAM 256Kx4 Bit With ÜE High-Speed BiCMOS Static RAM FEATURES .;^ •! ; GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(max.) (CMOS): 10 mA(max.) Operating KM64B1003J- 8:165 mA(Max.)

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D 7^142 KM64B1003 □□17bb2 DhS «SrißK BiCMOS SRAM 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation

Contextual Info: KM64B1003 BiCMOS SRAM 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10 ,12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)

Contextual Info: BiCMOS SRAM KM64B1003 262,144 WORD x 4 Bit With OE Ultra High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12, 15ns (Max.) • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating : KM6481003J-8: 165mA (Max.)

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

KM616V4002A

Abstract: 6161002 ER255 KM732V589
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15

SOJ 44

Abstract: 1MX1 KM6865
Contextual Info: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

KM736V789-60

Abstract: 512k*8 sram KM68U4000A
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs