TRANSISTOR MOSFET IRF Search Results

Contextual Info: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.01 • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available

Contextual Info: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: P-CHANNEL POWER MOSFET IRFN5210 • Low RDS on Power MOSFET Transistor, Fully Avalanche Rated • Hermetic Ceramic Surface Mount package • Designed For Fast Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

mosfet IRF240

Abstract: mosfet to3 IRF240 LE17 power MOSFET IRF240
Contextual Info: N-CHANNEL POWER MOSFET IRF240 • Low RDS on MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

uc 5587

Abstract: IRFN5210 LE17
Contextual Info: P-CHANNEL POWER MOSFET IRFN5210 • Low RDS on Power MOSFET Transistor, Fully Avalanche Rated • Hermetic Ceramic Surface Mount package • Designed For Fast Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: IRF610 Semiconductor Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

TA17444

Contextual Info: IRF710 Semiconductor Data Sheet June 1999 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: N-CHANNEL POWER MOSFET IRFM540 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: N-CHANNEL POWER MOSFET IRFM360 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: IRFBC40 Semiconductor Data Sheet July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRF720 Semiconductor July 1999 Data Sheet 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

mosfet to3

Abstract: irf33 2N6760 IRF330 LE17
Contextual Info: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.0Ω • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available

IRFM540

Abstract: 50Vdi 72 diode LE17
Contextual Info: N-CHANNEL POWER MOSFET IRFM540 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: IRF820 Semiconductor July 1999 Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

transistor 9527

Abstract: 9527 irfy330 tr 9527
Contextual Info: N-CHANNEL POWER MOSFET IRFY330 • BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: IRFP240 Semiconductor Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: N-CHANNEL POWER MOSFET IRF240 • Low RDS on MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: N-CHANNEL POWER MOSFET IRFY330 • BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

IRFD9110

Abstract: TA17541
Contextual Info: IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features • 0.7A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

application IRFP450

Abstract: datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45
Contextual Info: IRFP450 Data Sheet January 2002 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features • 14A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

MOSFET 400V TO-220

Abstract: transistor IRF730 400v 5a mosfet IRF73 TRANSISTOR mosfet 400V switching transistor Diode 400V 5A maximum idss transistor mosfet MOSFET 400V
Contextual Info: INCHANGE MOSFET IRF730 N-channel mosfet transistor ‹ Features ・With TO-220 package ・Simple drive requirements ・Fast switching ・VDSS=400V; RDS ON ≤1.0Ω;ID=5.5A ・1.gate 2.drain 3.source 123 ‹ Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER

IRF620 application

Abstract: TA9600 IRF620 TB334 transistor irf620
Contextual Info: IRF620 Data Sheet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 5.0A, 200V Formerly developmental type TA9600. Ordering Information PACKAGE 1577.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRFF110

Abstract: TA17441 TB334
Contextual Info: IRFF110 Data Sheet January 2002 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features • 3.5A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of