IRF610 Search Results

power MOSFET IRF610

Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)

IRF610

Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power

irf 2203

Abstract: IRF610B_FP001 IRF*_FP001 IRF 870 irf 146
Contextual Info: IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

IRF610

Abstract: power MOSFET IRF610 33a marking
Contextual Info: International S Rectifier P D -9.3261 IRF610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 1 lD = 3.3A Description DATA SH EETS

intersil irf610

Abstract: IRF610 TB334 power MOSFET IRF610
Contextual Info: IRF610 Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRF610

Abstract: MOSFET dynamic irf610pbf power MOSFET IRF610
Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)

IRF013

Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
Contextual Info: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

IRF610A

Contextual Info: IRF610A Advanced Power M O SFET FEATURES D S S • L o w e r In p u t C a p a c ita n c e ■ Im p ro v e d G a te C h a rg e ^ D S o n = ■ E x te n d e d S a fe O p e ra tin g A re a ■ L o w e r L e a k a g e C u rre n t : 10 |jA (M a x .) @ M Low

Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

IRF610

Abstract: power MOSFET IRF610 IRF611 irf610 mosfet irf612
Contextual Info: IRF610, IRF611, IRF612, IRF613 S E M I C O N D U C T O R 2.6A and 3.3A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.6A and 3.3A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

EIA-541

Abstract: IRF6100 4.5v to 100v input regulator
Contextual Info: PD - 93930A IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V

Contextual Info: IRF610A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current . 10 nA{M ax. BV,DSS 200 V ^D S o n ) =

Contextual Info: IRF610A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max @ VDS= 200V = 200 V

Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

IRF610

Abstract: TB334 power MOSFET IRF610 IRF61
Contextual Info: IRF610 Data Sheet January 2002 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

Contextual Info: IRF610 Semiconductor Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF610S

Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

EIA-541

Abstract: IRF6100 MOSFET 2301 SOT-23 MOSFET 2301 Diode Mark sot23 4x 4.5v to 100v input regulator
Contextual Info: PD - 93930C IRF6100 HEXFET Power MOSFET l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel VDSS RDS(on) max ID -20V 0.065Ω@VGS = -4.5V

smd 33a

Abstract: 1RF610 33A SMD DIODE smd diode JJ AN-994 IRF610S SMD-220
Contextual Info: International IS Rectifier PD-9.899 IRF610S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V ^ D S o n = 1 -5 ß

IRF610

Abstract: 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 MTP2N18
Contextual Info: 3469674 FAIRCHI LD S E M I C O ND UC TO R TiTi PE B 3 M £3 ^ Ez,7 M IRF610-613 7'- ?- <3? MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V • u ■naïf— — f a ir c h il d A Schlum berger Com pany Power And Discrete Division D e s c rip tio n Th ese devices are n-channel, enhancement mode, power

Contextual Info: 4ASS4S2 0D14b6b ATS « I N R International E5R Rectifier HEXFET Power MOSFET • • • • • • • PD-9.899 IRF610S INTERNATIONAL R E C T IF IE R Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avaianche Rated Fast Switching

Contextual Info: PD - 96012A IRF6100PbF HEXFET Power MOSFET l l l l l l l Ultra Low RDS on per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free VDSS RDS(on) max ID -20V

irf610

Abstract: power MOSFET IRF610 irf610 mosfet pulse electronics era IRF61 irf610 samsung
Contextual Info: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability