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    IRFF110 Price and Stock

    Infineon Technologies AG IRFF110

    Single N-Channel 40 V 0.6 Ohm 6.5 nC 15 W Through Hole Hexfet Transistor -TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Future Electronics IRFF110 Tray 100
    • 1 $15.66
    • 10 $15.46
    • 100 $15.15
    • 1000 $14.91
    • 10000 $14.91
    		Buy Now

    New Jersey Semiconductor Products, Inc. IRFF110

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF110 437 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
    		Buy Now

    Vishay Siliconix IRFF110

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF110 3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    New Jersey Semiconductor Products Inc IRFF110

    TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,3.5A I(D),TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF110 349
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $17.6
    • 10000 $17.6
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    International Rectifier IRFF110

    TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,3.5A I(D),TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF110 1
    • 1 $11.3625
    • 10 $11.3625
    • 100 $11.3625
    • 1000 $11.3625
    • 10000 $11.3625
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    IRFF110 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF110 International Rectifier REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE Original PDF
    IRFF110 Intersil 3.5A, 100V, 0.600 ?, N-Channel Power MOSFET Original PDF
    IRFF110 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    IRFF110 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF110 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. Scan PDF
    IRFF110 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF110 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF110 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF110 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF110 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF110 Motorola N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. Scan PDF
    IRFF110 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF110 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF110 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF110 Unknown FET Data Book Scan PDF
    IRFF110 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF110 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF110R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF110R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF110R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA17441

    Abstract: No abstract text available
    Text: IRFF110 Data Sheet Title FF1 bt 5A, 0V, 00 m, March 1999 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF110 IRFF110 O-205AF TB334 TA17441

    IRFF110

    Abstract: No abstract text available
    Text: IRFF110 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF110 O205AF) 11-Oct-02 IRFF110

    IRFF113

    Abstract: TA17441
    Text: IRFF110, IRFF111, IRFF112, IRFF113 S E M I C O N D U C T O R 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF110, IRFF111, IRFF112, IRFF113 TA17441. IRFF113 TA17441

    IRFF110

    Abstract: JANTX2N6782 JANTXV2N6782
    Text: PD - 90423C IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF110 BVDSS 100V RDS(on) .60Ω ID 3.5A  The HEXFET technology is the key to International


    Original     		PDF 90423C IRFF110 JANTX2N6782 JANTXV2N6782 MIL-PRF-19500/556 O-205AF) IRFF110 JANTX2N6782 JANTXV2N6782

    mosfet cross reference

    Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
    Text: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G


    Original     		PDF 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G 2N6661 mosfet cross reference bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross

    Untitled

    Abstract: No abstract text available
    Text: PD - 90423C IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF110 BVDSS 100V RDS(on) .60Ω ID 3.5A  The HEXFET technology is the key to International


    Original     		PDF 90423C IRFF110 JANTX2N6782 JANTXV2N6782 MIL-PRF-19500/556 O-205AF)

    TA17441

    Abstract: IRFF110 TB334
    Text: IRFF110 Data Sheet March 1999 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET • 3.5A, 100V • rDS ON = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		PDF IRFF110 TB334 TA17441. O-205AF TA17441 IRFF110 TB334

    IRFF110

    Abstract: TA17441 TB334
    Text: IRFF110 Data Sheet January 2002 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features • 3.5A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF110 IRFF110 TA17441 TB334

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    CMF65-5.556K

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K

    motorola mosfet for audio

    Abstract: IRFF113 IRFF110
    Text: M O T O R O L A SC -CXSTRS/R F> ^ 6367254 MOTOROLA SC DÊjb3h7ES4 0003503 1 98D 83283 XSTRS/R F D T -lT -o -j MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFF110 IRFF113 Advance Information S m a ll-S ig n a l Field Effe ct T ran sisto r N-Channel Enhancement-Mode


    OCR Scan     		PDF IRFF110 IRFF113 IRFF112 IRFF113 motorola mosfet for audio

    irff113

    Abstract: TA17441 SS1020
    Text: h a f r r is IRFF110, IRFF111, IRFF112, IRFF113 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 O hm , N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFF110, IRFF111, IRFF112, IRFF113 TA17441. RFF113 irff113 TA17441 SS1020

    1rff110

    Abstract: IRFF110 IRFF111 IRFF113 F112 FF110 IRFF112 cs 30-08 io4
    Text: -;- Standard Power M O SFETs IRFF110, IRFF111, IRFF112, IRFF113 File Number 1562 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHAN C EM EN T MODE


    OCR Scan     		PDF IRFF110, IRFF111, IRFF112, IRFF113 0V-100V IRFF112 IRFF113 758VQSS 1rff110 IRFF110 IRFF111 F112 FF110 cs 30-08 io4

    Untitled

    Abstract: No abstract text available
    Text: International sslRectifier Government and Space hexfet power m o sfets Hermetic Package N-Channel Part BV d s s Number V IRFF024 RDS(on) (Ohms) •d @ Tq = 100°C R thJC Max. Pd @ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) 60 0.15 8.0 IRFF110 100 0.60


    OCR Scan     		PDF IRFF024 IRFF110 2N6782 JANTX2N6782 JANTXV2N6782 IRFF120 2N6788 JANTX2N6788 JANTXV2N6788 IRFF130

    1RFF113

    Abstract: FF113R IRFF111R 1RFF110
    Text: 3 H A R R I S IRFF110/ 111/112/113 IRFF110R/111R/112R/113R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-205AF • 3.0A and 3.5A, 80V - 100V BOTTOM VIEW • rDS(on = O-ßf1 and 0 .8 ft • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFF110/ IRFF110R/111R/112R/113R T0-205AF 1RFF110, IRFF111, IRFF112, IRFF113 IRFF110R, IRFF111R, IRFF112R, 1RFF113 FF113R IRFF111R 1RFF110

    1RFF111

    Abstract: a08g IRFF110 IRFF111 IRFF112 IRFF113
    Text: G E SOLID STATE Dl DE D Ë | 3 ô 7 S 0 a i 001flE4ci 3 3875081 G E SOLID STATE 01E 18249 Standard Power M O S F E T s_ IRFF110, IRFF111, IRFF112, IRFF113 T~- $ i ~ ° i D File Number 1562 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode


    OCR Scan     		PDF 7SD01 1RFF110, IRFF111, IRFF112, IRFF113 0V-100V IRFF110, IRFF112 IRFF113 1RFF111 a08g IRFF110 IRFF111

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
    Text: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 LM3661TL-1.25

    F110F

    Abstract: SK 6211 TD-205A flower in the rain IRFF110R IRFF111R IRFF112R IRFF113R
    Text: Rugged Power M OSFETs File N u m b e r 2022 IRFF110R, IRFF111R.IRFF112R, IRFF113R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 60V-100V rDs on = 0.60 and 0.8CÎ N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF Number2022 IRFF110R, IRFF111R IRFF112R, IRFF113R 0V-100V tICS-41111 IRFF111R, IRFF112R F110F SK 6211 TD-205A flower in the rain IRFF110R IRFF113R

    IRFF110

    Abstract: IRFF111
    Text: FUT RELD EFFECT POWER TRANSISTOR IRFF110,111 3.5 AMPERES 100, 60 VOLTS RDS ON = 0.6 n Preliminary This series of N -C h annel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF110 IRFF11 IFIFF11 250MA, IRFF111

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRFF110 IRFF113 Advance Information S m all-S ig n al Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S N -C H A N N E L T M O S P O W E R FETs r D S o n = 0 .6 O H M 100 V O L T S . . . d e s ig n e d f o r lo w v o lt a g e , h ig h s p e e d p o w e r s w it c h in g


    OCR Scan     		PDF IRFF110 IRFF11n IRFF113

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


    OCR Scan     		PDF IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    Untitled

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211