IRFD9220 Search Results

IRFD9220

Contextual Info: IRFD9220 Data Sheet January 2002 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

s0918

Abstract: IRFD9220
Contextual Info: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel

Contextual Info: International Rectifier • HEXFET P o w e r M O S F E T • • • • • • • DD1SD7t 3SS" INR PD'9439C IRFD9220 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel Fast Switching

IRFD120

Abstract: VISHAY DIODE MARKING
Contextual Info: PD- 95918 IRFD9220PbF • Lead-Free Document Number: 91141 10/28/04 www.vishay.com 1 IRFD9220PbF Document Number: 91141 www.vishay.com 2 IRFD9220PbF Document Number: 91141 www.vishay.com 3 IRFD9220PbF Document Number: 91141 www.vishay.com 4 IRFD9220PbF Document Number: 91141

Contextual Info: IRFD9220, SiHFD9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) () 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable

Contextual Info: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel

Contextual Info: IRFD9220 S em iconductor April 1999 Data Sheet -0.6A, -200V, 1.500 Ohm, P-Channel Power MOSFET • -0.6A, -200V • rDS ON = 1 -500i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRFD120

Contextual Info: PD- 95918 IRFD9220PbF • Lead-Free 1 IRFD9220PbF 2 IRFD9220PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE

IRF7205

Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY

IF-D92

Abstract: IRFD9220 IRFD9223 VOS-10
Contextual Info: Rugged Power M IRFD9220 IRFD9223 M File Number 0 ~ aR 2286 Avalanche-Energy-Rated P-Channel Power MOSFETs -0.45 A and -0.6 A, -150 V and -200 V rDsion = 1.5 0 and 2.4 Q TERMINAL DIAGRAM

IRFD9220

Abstract: 9439c 439C 1RFD9220 1rfd if39
Contextual Info: PD-9.439C International lOR Rectifier IRFD9220 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel Fast Switching Ease of Paralleling V dss - -200V R DS on = 1 -5 Í Í

Contextual Info: IRFD9220 Data Sheet Title FD 20 bt A, 0V, 00 m, July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) () 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel

Contextual Info: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) () 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel

Contextual Info: • 4302271 ODSMSTE 05? ■ HAS IRFD9220 IRFD9223 ¡3 H a r r is Avalanche Energy Rated P-Channel Power M O SFETs January 1 9 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -0.45A and -0.6A, -150V and -200V TOP VIEW • rDS ON = 1-5H and 2.4CÎ • Single Pulse Avalanche Energy Rated

Contextual Info: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • End Stackable

Contextual Info: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) () 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel

AN609

Abstract: IRFD9220
Contextual Info: IRFD9220_RC, SiHFD9220_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

diode marking s12

Contextual Info: IRFD9220, SiHFD9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) () 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 COMPLIANT • End Stackable • P-Channel • Fast Switching • Ease of Paralleling

F111

Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
Contextual Info: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR

IRFD9220

Contextual Info: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • End Stackable

IRFD120

Abstract: marking DUT
Contextual Info: PD- 95918 IRFD9220PbF • Lead-Free www.irf.com 1 10/28/04 IRFD9220PbF 2 www.irf.com IRFD9220PbF www.irf.com 3 IRFD9220PbF 4 www.irf.com IRFD9220PbF www.irf.com 5 IRFD9220PbF 6 www.irf.com IRFD9220PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

Contextual Info: IRFD9220, SiHFD9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) () 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 COMPLIANT • End Stackable • P-Channel • Fast Switching • Ease of Paralleling

IRFD9220

Contextual Info: IRFD9220 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET File Number 2286.3 Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of