F112 Search Results

F112 Result Highlights (5)

Part	Manufacturer	Description
F1129LBNELI	Renesas Electronics Corporation	Single-ended Input, Differential Output High Gain RF Amplifier
F1129HBNELI	Renesas Electronics Corporation	Single-ended Input, Differential Output High Gain RF Amplifier
F1129HBNELI8	Renesas Electronics Corporation	Single-ended Input, Differential Output High Gain RF Amplifier
F1129LBNELI8	Renesas Electronics Corporation	Single-ended Input, Differential Output High Gain RF Amplifier
F1129MBNELI	Renesas Electronics Corporation	Single-ended Input, Differential Output High Gain RF Amplifier

F112 Price and Stock

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Microchip Technology Inc MICRF112YMU-TR RF TX IC ASK 300-450MHZ 10XFDFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MICRF112YMU-TR	Cut Tape	4,940		1	1 $0.9 10 $0.9 100 $0.9 1000 $0.9 10000 $0.9	Buy Now
	MICRF112YMU-TR	Digi-Reel	4,940		1	1 $0.9 10 $0.9 100 $0.9 1000 $0.9 10000 $0.9	Buy Now
Microchip Technology Inc	MICRF112YMU-TR					1 $0.9 10 $0.9 100 $0.75 1000 $0.69 10000 $0.65	Buy Now
Rochester Electronics	MICRF112YMU-TR		10		1	1 $0.8889 10 $0.8889 100 $0.8356 1000 $0.7556 10000 $0.7556	Buy Now
NAC	MICRF112YMU-TR				5,000	1 $0.98 10 $0.98 100 $0.89 1000 $0.8 10000 $0.8	Buy Now
Richardson RFPD	MICRF112YMU-TR				5,000	1 - 10 - 100 - 1000 - 10000 $0.85	Buy Now

Avnet Silica	MICRF112YMU-TR			11 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG CY9AF112LAPMC1-GNE2 IC MCU 32BIT 128KB FLASH 64LQFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY9AF112LAPMC1-GNE2	Tray	1,600		1	1 $5.47 10 $4.216 100 $5.47 1000 $3.625 10000 $3.625	Buy Now
Essentra Components 36832MF112 MALE FEMALE THREADED STANDOFF, #
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	36832MF112	Bulk	1,548		1	1 $0.42 10 $0.42 100 $0.241 1000 $0.21215 10000 $0.21215	Buy Now
Infineon Technologies AG CY9AF112MPMC-GE1 IC MCU 32BIT 128KB FLASH 80LQFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY9AF112MPMC-GE1	Tray	1,380		1	1 $7.31 10 $5.643 100 $7.31 1000 $4.31676 10000 $4.31676	Buy Now
Rochester Electronics	CY9AF112MPMC-GE1		1,194		1	1 $4.33 10 $4.33 100 $4.07 1000 $3.68 10000 $3.68	Buy Now
Schurter Electronic Components KMF1.1221.11 PWR ENT MOD RCPT IEC320-C14 PNL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	KMF1.1221.11	Bulk	1,314		1	1 $22.16 10 $22.16 100 $22.16 1000 $22.16 10000 $22.16	Buy Now
Master Electronics	KMF1.1221.11		40			1 $29.28 10 $27.5 100 $23.62 1000 $22.7 10000 $22.7	Buy Now

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F112 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
F112	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
F1120	Polyfet RF Devices	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR	Original	PDF
F1129LBEVB	Renesas Electronics	BOARD	Original	PDF
F1129LBNELI	Renesas Electronics	VFQFPN 2.00X2.00X0.75 MM, 0.50MM	Original	PDF
F1129LBNELI8	Renesas Electronics	VFQFPN 2.00X2.00X0.75 MM, 0.50MM	Original	PDF
F1129MBEVB	Renesas Electronics	BOARD	Original	PDF
F1129MBNELI	Renesas Electronics	VFQFPN 2.00X2.00X0.75 MM, 0.50MM	Original	PDF
F1129MBNELI8	Renesas Electronics	VFQFPN 2.00X2.00X0.75 MM, 0.50MM	Original	PDF
F112-L	Unknown	IC Datasheet (Short Description and Cross Reference Only)	Scan	PDF
F-112X	Triad Magnetics	Transformers - Power Transformers - CHASSIS MOUNT POWER TRANSFORMER	Original	PDF
F-112X	MagneTek	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - POWER TRANSFORMER, LEADS, 115V, 14.0VCT, .25A	Scan	PDF

F112 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
vinco igbt Abstract: No abstract text available Text: 10-F1127PA050SC-L169E09 datasheet flow 7PACK 1 1200 V / 50 A Features flow 1 17mm housing ● Compact Flow 1 housing ● Trench Fieldstop IGBT4 Technology ● Compact and Low Inductance Design ● Built-in NTC Schematic Target applications ● Motor Drives	Original	PDF	10-F1127PA050SC-L169E09 vinco igbt
BF998 Abstract: marking code GL Q62702-F1129 d 998 transistor circuit Text: Silicon N Channel MOSFET Tetrode ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz BF 998 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO Q62702-F1129	Original	PDF	Q62702-F1129 OT-143 BF998 marking code GL Q62702-F1129 d 998 transistor circuit
Untitled Abstract: No abstract text available Text: Product Specifications F112KKC3 Flexible Twist for WR112, 7.125–8.5 GHz, with interface types PBR84 and PBR84, 900 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band Attenuation Average Power Peak Power VSWR	Original	PDF	F112KKC3 WR112, PBR84 PBR84, dB/100 WR112 PBR84
Untitled Abstract: No abstract text available Text: Product Specifications F112KMS4 Flexible Twist for WR112, 7.05–10.0 GHz, with interface types PBR84 and UBR84, 1000 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band 7.05 – 10.0 GHz Attenuation 0.40 db/m \| 0.12 db/ft	Original	PDF	F112KMS4 WR112, PBR84 UBR84, WR112 PBR84 UBR84 2002/95/EC
Untitled Abstract: No abstract text available Text: Product Specifications F112BCS3 Flexible Twist for WR112, 7.05–10.0 GHz, with interface types UG51/U and CPR112G, 900 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band 7.05 – 10.0 GHz Attenuation	Original	PDF	F112BCS3 WR112, UG51/U CPR112G, WR112 UG51/U CPR112G 2002/95/EC
F112CMS3 Abstract: No abstract text available Text: Product Specifications F112CMS3 Flexible Twist for WR112, 7.05–10.0 GHz, with interface types CPR112G and UBR84, 900 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band 7.05 – 10.0 GHz Attenuation 0.40 db/m \| 0.12 db/ft	Original	PDF	F112CMS3 WR112, CPR112G UBR84, WR112 CPR112G UBR84 2002/95/EC F112CMS3
UDR84 Abstract: No abstract text available Text: Product Specifications F112LLS3 Flexible Twist for WR112, 7.05–10.0 GHz, with interface types UDR84 and UDR84, 900 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band 7.05 – 10.0 GHz Attenuation 0.40 db/m \| 0.12 db/ft	Original	PDF	F112LLS3 WR112, UDR84 UDR84, WR112 UDR84 2002/95/EC
Untitled Abstract: No abstract text available Text: Product Specifications F112KLS2 Flexible Twist for WR112, 7.05–10.0 GHz, with interface types PBR84 and UDR84, 600 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band Attenuation Average Power Peak Power VSWR	Original	PDF	F112KLS2 WR112, PBR84 UDR84, dB/100 WR112 PBR84 UDR84
Untitled Abstract: No abstract text available Text: Product Specifications F112DDB2 Flexible Twist for WR112, 7.725–8.5 GHz, with interface types CPR112F and CPR112F, 600 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band 7.725 – 8.5 GHz Attenuation 0.04 db/m \| 0.12 db/ft	Original	PDF	F112DDB2 WR112, CPR112F CPR112F, WR112 CPR112F 2002/95/EC
CPR112F Abstract: No abstract text available Text: Product Specifications F112DDC1 Flexible Twist for WR112, 7.125–8.5 GHz, with interface types CPR112F and CPR112F, 300 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band 7.125 – 8.5 GHz Attenuation	Original	PDF	F112DDC1 WR112, CPR112F CPR112F, WR112 CPR112F 2002/95/EC
PBR84 Abstract: No abstract text available Text: Product Specifications F112KKC4 Flexible Twist for WR112, 7.125–8.5 GHz, with interface types PBR84 and PBR84, 1000 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band 7.125 – 8.5 GHz Attenuation 0.40 db/m \| 0.12 db/ft	Original	PDF	F112KKC4 WR112, PBR84 PBR84, WR112 PBR84 2002/95/EC
Untitled Abstract: No abstract text available Text: Product Specifications F112KHC4 Flexible Twist for WR112, 7.125–8.5 GHz, with interface types PBR84 and PDR84, 1000 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band 7.125 – 8.5 GHz Attenuation 0.40 db/m \| 0.12 db/ft	Original	PDF	F112KHC4 WR112, PBR84 PDR84, WR112 PBR84 PDR84 2002/95/EC
Untitled Abstract: No abstract text available Text: Product Specifications F112ABS2 Flexible Twist for WR112, 7.05–10.0 GHz, with interface types UG52B/U and UG51/U, 600 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band 7.05 – 10.0 GHz Attenuation	Original	PDF	F112ABS2 WR112, UG52B/U UG51/U, WR112 UG52B/U UG51/U 2002/95/EC
Untitled Abstract: No abstract text available Text: Product Specifications F112HHS2 Flexible Twist for WR112, 7.05–10.0 GHz, with interface types PDR84 and PDR84, 600 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band 7.05 – 10.0 GHz Attenuation 0.40 db/m \| 0.12 db/ft	Original	PDF	F112HHS2 WR112, PDR84 PDR84, WR112 PDR84 2002/95/EC

Untitled Abstract: No abstract text available Text: Product Specifications F112CDA4 Flexible Twist for WR112, 7.125–7.75 GHz, with interface types CPR112G and CPR112F, 1000 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band Attenuation Average Power Peak Power	Original	PDF	F112CDA4 WR112, CPR112G CPR112F, dB/100 WR112 CPR112G CPR112F
pdr84 Abstract: No abstract text available Text: Product Specifications F112HHC5 Flexible Twist for WR112, 7.125–8.5 GHz, with interface types PDR84 and PDR84, 1200 mm CHARACTERISTICS Electrical Specifications Operating Frequency Band 7.125 – 8.5 GHz Attenuation 0.40 db/m \| 0.12 db/ft	Original	PDF	F112HHC5 WR112, PDR84 PDR84, WR112 PDR84 2002/95/EC
Untitled Abstract: No abstract text available Text: F112R6A015SC target datasheet flowPACK 1 1200V/15A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT4 technology Target Applications Schematic ● Power Regeneration Types ● 10-F112R6A015SC-M438E08 ● 10-F112R6A015SC01-M438E18	Original	PDF	F112R6A015SC 200V/15A 10-F112R6A015SC-M438E08 10-F112R6A015SC01-M438E18
schematic diagram bluetooth headset Abstract: schematic diagram bluetooth headset TI ferrite beat cable sattelite MIPI omnivision AN229 Murata varistor digital 5.1 audio amplifier diagram schematic bluetooth earphone circuit diagram BGF112 Text: B GF1 12 E MI Filte r and E SD Pro tec ti on for AV I/F A p plicatio ns us ing B G F112 Applic at io n N ote A N 229 Revision: 1.0 2010-09-10 RF and P r otecti on D evic es Edition 2010-09-10 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG	Original	PDF	AN229, BGF112 AN229 schematic diagram bluetooth headset schematic diagram bluetooth headset TI ferrite beat cable sattelite MIPI omnivision AN229 Murata varistor digital 5.1 audio amplifier diagram schematic bluetooth earphone circuit diagram BGF112
F1120 Abstract: No abstract text available Text: polyfet rf devices F1120 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base	Original	PDF	F1120 F1120
sot marking code ZS Abstract: transistor bf 290 Text: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration	OCR Scan	PDF	OT-23 Q62702-F1124 21el2 IS2l/S12l sot marking code ZS transistor bf 290
Untitled Abstract: No abstract text available Text: 112 5 4 F / 7 4 F 1 1 2 Connection Diagrams Dual JK Negative Edge-Triggered Flip-Flop Description The 'F112 co n ta in s tw o independent, high-speed J K flip -flo p s w ith D irect S et and C le a r inputs. S yn ch ro n o u s state ch anges are in itiated by the	OCR Scan	PDF	54F/74F
Untitled Abstract: No abstract text available Text: 112 54F/F112 Connection Diagrams Dual J K Negative Edge-Triggered Flip-Flop CP- [7 Description The 'F112 contains two independent, high-speed J K flip-flops with Direct Set and Clear inputs. Synchronous state changes are initiated by the falling edge of the clock. Triggering occurs at a voltage level of the clock	OCR Scan	PDF	54F/74F112 54F/74F
A479SS Abstract: A476 A480S Al203 A473 Z201N 0 280 130 023 A459 A479 F1120 Text: KyD C ERa T h e N e w V a l u e F r o n t ie r C h a r a c t e r is t ic s o f M a te ria l A445 W Â ÎB -§ - M ateriaIC ode 7tJl'XT 7 # F0RSTERITE 2Mg0-Si02 A L U M IN A (Al20 3) U n it M a te ria l I A459 I A473 I A476 I A479 I A479S^ I A480S I F1120	OCR Scan	PDF	2Mg0-Si02) Mg0-Si02) -2Si02) A479SS A480S F1023 F1120 Z201N ML652 Al203 A476 A480S A473 0 280 130 023 A459 A479 F1120
Untitled Abstract: No abstract text available Text: polyfet rf devices F1120 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended	OCR Scan	PDF	F1120 V5410DT DD0017S

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F112 Search Results

F112 Result Highlights (5)

F112 Price and Stock

Microchip Technology Inc MICRF112YMU-TR

Infineon Technologies AG CY9AF112LAPMC1-GNE2

Essentra Components 36832MF112

Infineon Technologies AG CY9AF112MPMC-GE1

Schurter Electronic Components KMF1.1221.11

F112 Datasheets (11)

F112 Datasheets Context Search

vinco igbt

BF998

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F112CMS3

UDR84

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CPR112F

PBR84

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pdr84

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schematic diagram bluetooth headset

F1120

sot marking code ZS

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A479SS

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