TRANSISTOR MOSFET 40A Search Results

Contextual Info: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

irf150

Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
Contextual Info: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

4311 mosfet transistor

Abstract: tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2
Contextual Info: IRFP150 Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRFP150

Abstract: 150N TB334
Contextual Info: S N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

0305S

Abstract: SCM040600 EN61000-4-2 EN61000-4-3 WF09 WF141100
Contextual Info: celduc r e l a i S/CON/SCM040600/A/16/03/05 s PRELIMINARY DATA Page 1/5 GB MOSFET BASED DC SOLID STATE RELAY SCM040600 X Latest MOSFET technology generation. X Ultra low on-state resistance. X New innovative isolated driver ensuring fast power transistor

G40N60

Abstract: g40n60c3 HGTG40N60C3 LD26 RHRP3060 g40n
Contextual Info: HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction

G40N60

Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
Contextual Info: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction

G40N60

Abstract: g40n60c3 HGTG40N60C3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273
Contextual Info: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction

S60DC40

Abstract: varistor ve 17 NFEN55011 varistor wiring diagram IEC60947-1
Contextual Info: Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient

Contextual Info: Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and of and thus low power transient

40N60A4

Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
Contextual Info: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a

Contextual Info: NEW Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient

CHM80N75NGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 75 Volts CHM80N75NGP CURRENT 80 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. D2PAK

CHM72A3PAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM72A3PAGP CURRENT 70 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 75 Volts CHM80N75NPT CURRENT 80 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. D2PAK

ECH8901

Contextual Info: ECH8901 Ordering number : ENA1472 SANYO Semiconductors DATA SHEET ECH8901 Appllications • PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Charger. Features • • • • Composite type, facilitating high-density mounting.

CHM8030LANGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM8030LANGP CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK

Contextual Info: ECH8901 Ordering number : ENA1472 SANYO Semiconductors DATA SHEET ECH8901 Appllications • PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Charger. Features • • • • Composite type, facilitating high-density mounting.

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM76139NPT CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM72A3NPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK

CHM83A3NGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM83A3NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK

CHM76139NGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM76139NGP CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM8030LANPT CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM83A3NPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK