Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR MOSFET 40A Search Results

    TRANSISTOR MOSFET 40A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MOSFET 40A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf150

    Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
    Text: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF150 TA17421. irf150 MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150

    4311 mosfet transistor

    Abstract: tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2
    Text: IRFP150 Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRFP150 TA17431. O-247 4311 mosfet transistor tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2

    IRFP150

    Abstract: 150N TB334
    Text: S N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFP15 TA17431. IRFP150 150N TB334

    0305S

    Abstract: SCM040600 EN61000-4-2 EN61000-4-3 WF09 WF141100
    Text: celduc r e l a i S/CON/SCM040600/A/16/03/05 s PRELIMINARY DATA Page 1/5 GB MOSFET BASED DC SOLID STATE RELAY SCM040600 X Latest MOSFET technology generation. X Ultra low on-state resistance. X New innovative isolated driver ensuring fast power transistor


    Original     		PDF S/CON/SCM040600/A/16/03/05 SCM040600 1K470000 0305S SCM040600 EN61000-4-2 EN61000-4-3 WF09 WF141100

    G40N60

    Abstract: g40n60c3 HGTG40N60C3 LD26 RHRP3060 g40n
    Text: HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 LD26 RHRP3060 g40n

    G40N60

    Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
    Text: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 LD26 RHRP3060 g40n60c3

    G40N60

    Abstract: g40n60c3 HGTG40N60C3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273
    Text: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273

    S60DC40

    Abstract: varistor ve 17 NFEN55011 varistor wiring diagram IEC60947-1
    Text: Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient


    Original     		PDF S60DC40 100Hz 700Hz S60DC40 S60DC40\022009\Q1 varistor ve 17 NFEN55011 varistor wiring diagram IEC60947-1

    Untitled

    Abstract: No abstract text available
    Text: Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and of and thus low power transient


    Original     		PDF S60DC40 100Hz 700Hz S60DC40 S60DC40\022009\Q1

    40N60A4

    Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
    Text: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a


    Original     		PDF HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 HGT1Y40N60A4D LD26 TA49347

    Untitled

    Abstract: No abstract text available
    Text: NEW Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient


    Original     		PDF S60DC40 100Hz 700Hz S60DC40 S60DC40\102006\Q1

    CHM80N75NGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 75 Volts CHM80N75NGP CURRENT 80 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. D2PAK


    Original     		PDF CHM80N75NGP 250uA CHM80N75NGP

    CHM72A3PAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM72A3PAGP CURRENT 70 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE


    Original     		PDF CHM72A3PAGP O-252) CHM72A3PAGP

    CHM61A3PAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM61A3PAGP CURRENT 40 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE


    Original     		PDF CHM61A3PAGP O-252) CHM61A3PAGP

    ECH8901

    Abstract: No abstract text available
    Text: ECH8901 Ordering number : ENA1472 SANYO Semiconductors DATA SHEET ECH8901 Appllications • PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Charger. Features • • • • Composite type, facilitating high-density mounting.


    Original     		PDF ECH8901 ENA1472 A1472-6/6 ECH8901

    CHM8030LANGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM8030LANGP CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK


    Original     		PDF CHM8030LANGP CHM8030LANGP

    Untitled

    Abstract: No abstract text available
    Text: ECH8901 Ordering number : ENA1472 SANYO Semiconductors DATA SHEET ECH8901 Appllications • PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Charger. Features • • • • Composite type, facilitating high-density mounting.


    Original     		PDF ECH8901 ENA1472 A1472-6/6

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM76139NPT CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK


    Original     		PDF CHM76139NPT

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM72A3NPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK


    Original     		PDF CHM72A3NPT

    CHM83A3NGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM83A3NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK


    Original     		PDF CHM83A3NGP CHM83A3NGP

    CHM76139NGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM76139NGP CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK


    Original     		PDF CHM76139NGP CHM76139NGP

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM8030LANPT CURRENT 75 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK


    Original     		PDF CHM8030LANPT

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM83A3NPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. D2PAK


    Original     		PDF CHM83A3NPT

    Untitled

    Abstract: No abstract text available
    Text: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRFP150 O-247