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Micro Commercial Components MCG40N10YHE3-TP N-CHANNEL MOSFET, DFN3333
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCG40N10YHE3-TP	Digi-Reel	9,862		1	1 $1.32 10 $0.827 100 $1.32 1000 $0.38761 10000 $0.35497	Buy Now
	MCG40N10YHE3-TP	Cut Tape	9,862		1	1 $1.32 10 $0.827 100 $1.32 1000 $0.38761 10000 $0.35497	Buy Now
	MCG40N10YHE3-TP	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.29781	Buy Now
Mouser Electronics	MCG40N10YHE3-TP		4,842			1 $0.89 10 $0.784 100 $0.535 1000 $0.38 10000 $0.305	Buy Now
Amphenol PCTEL GPS-TMG-40NCS RF ANT 1.575GHZ DOME N TYP F POL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GPS-TMG-40NCS	Bulk	89		1	1 $150.57 10 $140.106 100 $140.106 1000 $140.106 10000 $140.106	Buy Now
Richardson RFPD	GPS-TMG-40NCS				25	1 - 10 - 100 $177.49 1000 $177.49 10000 $177.49	Buy Now
Amphenol PCTEL GNSS1-TMG-40NMS RF ANT 1.5845GHZ DOME N TYPE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GNSS1-TMG-40NMS	Bulk	29		1	1 $211.71 10 $209.038 100 $209.038 1000 $209.038 10000 $209.038	Buy Now
RS	GNSS1-TMG-40NMS	Bulk		12 Weeks	25	1 - 10 - 100 $765.32 1000 $681.14 10000 $681.14	Get Quote
Richardson RFPD	GNSS1-TMG-40NMS				25	1 - 10 - 100 $261.54 1000 $261.54 10000 $261.54	Buy Now
Master Electronics	GNSS1-TMG-40NMS		3			1 $241 10 $227.8 100 $224.38 1000 $224.38 10000 $224.38	Buy Now
Amphenol PCTEL GPS-TMG-40NMS RF ANT GPS 40DB NF BRKT DOME
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GPS-TMG-40NMS	Bulk	26		1	1 $171.13 10 $162.938 100 $162.938 1000 $162.938 10000 $162.938	Buy Now
RS	GPS-TMG-40NMS	Bulk	13	14 Weeks	1	1 $661.59 10 $621.9 100 $621.9 1000 $621.9 10000 $621.9	Buy Now
Richardson RFPD	GPS-TMG-40NMS		12		1	1 $122.11 10 $122.11 100 $122.11 1000 $122.11 10000 $122.11	Buy Now
Master Electronics	GPS-TMG-40NMS		1			1 $193.66 10 $185.07 100 $180.75 1000 $180.75 10000 $180.75	Buy Now
Amphenol PCTEL GNSS1-TMG-40N RF ANT GNSS 40DB NF DOME
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GNSS1-TMG-40N	Bulk	22		1	1 $185.95 10 $179.619 100 $179.619 1000 $179.619 10000 $179.619	Buy Now
Richardson RFPD	GNSS1-TMG-40N		17		1	1 $225.6 10 $225.6 100 $225.6 1000 $225.6 10000 $225.6	Buy Now
Master Electronics	GNSS1-TMG-40N		25			1 $213.84 10 $176.2 100 $173.55 1000 $173.55 10000 $173.55	Buy Now

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G40N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
G40N60 Abstract: G40N60UF g40n60uf circuit g40n60u 7103 KA7812 KA7812 INTEGRATED CIRCUIT transistor ka7812 Text: TO-3PF Tube Packing Data TO-3PF Tube Packing Configuration: Figure 1.0 30 units per Tube Packaging Description: F G40N60UF 113 Bubble Sheet 12 Tubes per box TO-3PF parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in	Original	PDF	G40N60UF 570x150x48 590x330x245 KA7812-AE IMSYS777 A710103105 G40N60 G40N60UF g40n60uf circuit g40n60u 7103 KA7812 KA7812 INTEGRATED CIRCUIT transistor ka7812
40n60c3 Abstract: g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26 Text: [ /Title HGT G40N6 0C3R /Subject (75A, 600V, Rugged, UFS Series NChannel IGBT) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power T CT DUC PRO PRODU E T E E L T O U OBS UBSTIT 0C3 6 S N E	Original	PDF	G40N6 40n60c3 g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26
G40N60 Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3 Text: G40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction	Original	PDF	HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 LD26 RHRP3060 g40n60c3
G40N60B3 Abstract: No abstract text available Text: G40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	PDF	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60B3
G40N60 Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678 Text: G40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	PDF	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 HGTG40N60B3 equivalent g40n60b g40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678
G40N60 Abstract: g40n60c3d HGT1Y40N60C3D HGTG40N60C3 RHRP3060 TA49063 TA49389 Text: HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input	Original	PDF	HGT1Y40N60C3D HGT1Y40N60C3D 150oC. TA49273. TA49063. 100ns 150oC G40N60 g40n60c3d HGTG40N60C3 RHRP3060 TA49063 TA49389
G40N60 Abstract: g40n60c3 HGTG40N60C3 LD26 RHRP3060 g40n Text: G40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction	Original	PDF	HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 LD26 RHRP3060 g40n
HGTG40N60B3 equivalent Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6 Text: G40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	PDF	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC HGTG40N60B3 equivalent G40N60 g40n60b3 transistor C110 LD26 RHRP3060 TA49052 g40n6
G40N60 Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b HGTG40N60B3 LD26 RHRP3060 Text: G40N60B3 Data Sheet August 2003 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	PDF	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b LD26 RHRP3060
schema de branchement top 243 y Abstract: GTDM120A 350w schematic diagram dc motor control schematic diagram 415VAC to 24VDC POWER SUPPLY su kam pic GUVT120 interposing CT GG10S GSTR024D gw 6203 Text: GE Energy Industrial Solutions DEH-41 358 EntelliGuard G Power Circuit Breaker Disjoncteur de Puissance Open Vermogenschakelaar Installation, Operation and Maintenance Manual Manuel d'installation, d'opération et de maintenance Installatie-, Gebruikers- en Onderhoudshandleiding	Original	PDF	DEH-41 NL-7482 D-24534 F-95958 B-9000 schema de branchement top 243 y GTDM120A 350w schematic diagram dc motor control schematic diagram 415VAC to 24VDC POWER SUPPLY su kam pic GUVT120 interposing CT GG10S GSTR024D gw 6203
G40N120FL2 Abstract: No abstract text available Text: G40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	PDF	NGTG40N120FL2WG NGTG40N120FL2W/D G40N120FL2
G40N60 Abstract: g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b Text: G40N60B3 Semiconductor 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.	Original	PDF	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b
GG40H1 Abstract: GTG00K1-SF GG32N GCCN240R GG50M GTDM120A GG32N6 GTG00K9-4SF GG40N1 GW04M Text: 102003 GE Industrial Solutions GE Energy Industrial Solutions Industrial Solutions formerly Power Protection , a division of GE Energy, is a ﬁrst class European supplier of low and medium voltage products including wiring devices, residential and industrial electrical distribution components,	Original	PDF	I/3288/G/G GG40H1 GTG00K1-SF GG32N GCCN240R GG50M GTDM120A GG32N6 GTG00K9-4SF GG40N1 GW04M
G40N60 Abstract: g40n60b3 g40n60b g40n60b3 igbt TA49052 HGTG40N60B3 LD26 RHRP3060 45UH Text: G40N60B3 S E M I C O N D U C T O R PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package o • 70A, 600V at TC = +25 C JEDEC STYLE TO-247 • Square Switching SOA Capability E • Typical Fall Time - 160ns at +150oC C G • Short Circuit Rating	Original	PDF	HGTG40N60B3 O-247 160ns 150oC HGTG40N60B3 150oC. G40N60 g40n60b3 g40n60b g40n60b3 igbt TA49052 LD26 RHRP3060 45UH

g40n60b3d Abstract: G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 HGT1Y40N60B3D RHRP3060 TA49063 Text: HGT1Y40N60B3D Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input	Original	PDF	HGT1Y40N60B3D HGT1Y40N60B3D 150oC. TA49052. TA49063. g40n60b3d G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 RHRP3060 TA49063
G40N60B3 Abstract: G40N60 Text: G40N60B3 S E M I C O N D U C T O R 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.	Original	PDF	HGTG40N60B3 HGTG40N60B3 150oC. G40N60B3 1-800-4-HARRIS G40N60B3 G40N60
G40N60 Abstract: g40n60b3 igbt G40N60b3 HGTG40N60B3 LD26 RHRP3060 TA49052 Text: G40N60B3 S E M I C O N D U C T O R 70A, 600V, UFS Series N-Channel IGBT April 1997 Features Description • 70A, 600V, TC = 25oC The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.	Original	PDF	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC 1-800-4-HARRIS G40N60 g40n60b3 igbt G40N60b3 LD26 RHRP3060 TA49052
G40N60 Abstract: g40n60c3 HGTG40N60C3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273 Text: G40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction	Original	PDF	HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273
G40N60 Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b Text: G40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	PDF	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 LD26 RHRP3060 g40n60b
G40N60 Abstract: G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b3 igbt Text: G40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	PDF	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b3 igbt
G40N60 Abstract: g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052 Text: CB H G T G 40N 60B 3 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, T c = 2 5 °C The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.	OCR Scan	PDF	HGTG40N60B3 G40N60B3 1-800-4-HARRIS G40N60 g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052
G40N60 Abstract: g40n60b3 g40n60b HGTG40N60B3 equivalent TSC900 TA49052 C110 HGTG40N60B3 LD26 110CI Text: in t e G40N60B3 r r ii J a n u a ry . D ata S h eet m 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a	OCR Scan	PDF	HGTG40N60B3 HGTG40N60B3 TA49052. O-247 G40N60 g40n60b3 g40n60b HGTG40N60B3 equivalent TSC900 TA49052 C110 LD26 110CI

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G40N Price and Stock

Micro Commercial Components MCG40N10YHE3-TP

Amphenol PCTEL GPS-TMG-40NCS

Amphenol PCTEL GNSS1-TMG-40NMS

Amphenol PCTEL GPS-TMG-40NMS

Amphenol PCTEL GNSS1-TMG-40N

G40N Datasheets Context Search

G40N60

40n60c3

G40N60

G40N60B3

G40N60

G40N60

G40N60

HGTG40N60B3 equivalent

G40N60

schema de branchement top 243 y

G40N120FL2

G40N60

GG40H1

G40N60

g40n60b3d

G40N60B3

G40N60

G40N60

G40N60

G40N60

G40N60

G40N60