TA49063 Search Results

Contextual Info: RHRG3040, RHRG3050, RHRG3060 Semiconductor April 1995 File Number 3938.2 30A, 400V - 600V Hyperfast Diodes Features RHRG3040, RHRG3050 and RHRG3060 TA49063 are hyperfast diodes with soft recovery characteristics (tp p < 40ns). They have half the recovery time of ultrafast diodes

RHRG3040

Abstract: RHRG3050 RHRG3060 TA49063
Contextual Info: RHRG3040, RHRG3050, RHRG3060 April 1995 File Number 3938.2 30A, 400V - 600V Hyperfast Diodes Features RHRG3040, RHRG3050 and RHRG3060 TA49063 are hyperfast diodes with soft recovery characteristics (tRR < 40ns). They have half the recovery time of ultrafast diodes

Contextual Info: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.

RHRP3060

Abstract: TA49063 RHRP3040 RHRP3050
Contextual Info: RHRP3040, RHRP3050, RHRP3060 S E M I C O N D U C T O R 30A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <40ns JEDEC TO-220AC • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC

G40N60

Abstract: g40n60c3d HGT1Y40N60C3D HGTG40N60C3 RHRP3060 TA49063 TA49389
Contextual Info: HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input

RHRG3060c

Abstract: 600v 30a RHRG3040CC RHRG3060CC TA49063
Contextual Info: RHRG3040CC, RHRG3060CC Data Sheet January 2000 File Number 3939.3 30A, 400V - 600V Hyperfast Dual Diodes Features The RHRG3040CC and RHRG3060CC are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are silicon nitride

TA49063

Abstract: RHRP3060
Contextual Info: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.

RG-306

Abstract: RG306
Contextual Info: rCl H A R R IS uu s B . , RHRG3040CC RHRG3050CC, RHRG3060CC o o H D » c T o . 30A, 400V - 600V Hyperfast Dual Diodes November 1994 Package Features JE D E C STYLE TO-247 TOP VIEW • Hyperfast with Soft Recovery. <40ns • Operating

RHRG3040

Abstract: RHRG3050 RHRG3060 TA49063
Contextual Info: RHRG3040, RHRG3050, RHRG3060 S E M I C O N D U C T O R 30A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <40ns JEDEC STYLE TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

ta49063

Abstract: RHRG*40 RHRG3040 RHRG3060
Contextual Info: RHRG3040, RHRG3060 Data Sheet January 2000 File Number 3938.3 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride

RHRP3040

Abstract: RHRP3060 TA49063
Contextual Info: RHRP3040, RHRP3060 Data Sheet Title HR 040, HRP 60 bt A, 0V 0V pert odes utho eyrds A, 0V 0V pert odes terrpoon, pert odes vache ergy ted, itch January 2000 File Number 3933.2 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with

g20n60c3d

Abstract: g20n60c3d equivalent HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3
Contextual Info: HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

RHRG3060C

Abstract: RHRG3040CC RHRG3050CC RHRG3060CC TA49063
Contextual Info: RHRG3040CC, RHRG3050CC, RHRG3060CC S E M I C O N D U C T O R 30A, 400V - 600V Hyperfast Dual Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <40ns JEDEC STYLE TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

G20N60C3D

Abstract: HGTG20N60C3D RHRP3060 TA49063 TA49178 TA49179
Contextual Info: HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

RHRG3040

Abstract: RHRG3060 TA49063
Contextual Info: RHRG3040, RHRG3060 Data Sheet Title HR 040, HRG 60 bt A, 0V 0V pert odes eyrds A, 0V 0V pert odes terrpoon, minctor, ache ergy ted, itch wer p- File Number 3938.3 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with

RHRG3040CC

Abstract: RHRG3060C RHRG3060CC TA49063
Contextual Info: RHRG3040CC, RHRG3060CC Data Sheet Title HR 040 , HRG 60C bt A, 0V 0V pert al odes utho eyrds A, 0V 0V pert al odes terrpoon, pert al odes va- January 2000 File Number 3939.3 30A, 400V - 600V Hyperfast Dual Diodes Features The RHRG3040CC and RHRG3060CC are hyperfast diodes

Contextual Info: fH H a r r is U U RHRP3040, RHRP3050, RHF^P3060 S E M I C O N D U C T O R 30A, 400V - 600V Hyperfast Diodes April 1995 Package Features H y p erfa s t w ith S o ft R ec o v e ry ,<40ns • O p era tin g T e m p e ra tu r e . +175°C • R ev e rse V oltag e U p T o .

Contextual Info: RHRP3040, RHRP3050, RHRP3060 Semiconductor April 1995 These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft

Contextual Info: RHRG3040, RHRG3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride

RHRG3060C

Abstract: TA49063 RHRG3040CC RHRG3060CC
Contextual Info: in terrii RHRG3040CC, RHRG3060CC J a n u a ry . w in Data Sheet File Num ber 3939.3 30A, 400V 600V Hyperfast Dual Diodes Features The RHRG3040CC and RHRG3060CC are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are silicon nitride

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

RHRG3060

Abstract: RHRG3040 TA49063
Contextual Info: RHRG3040, RHRG3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride

RHRP3040

Abstract: RHRP3060 TA49063
Contextual Info: RHRP3040, RHRP3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride

g40n60b3d

Abstract: G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 HGT1Y40N60B3D RHRP3060 TA49063
Contextual Info: HGT1Y40N60B3D Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input