G40N60B3
Abstract: No abstract text available
Text: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG40N60B3
HGTG40N60B3
150oC.
100ns
150oC
G40N60B3
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G40N60
Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678
Text: HGTG40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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Original
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HGTG40N60B3
HGTG40N60B3
150oC.
100ns
150oC
G40N60
HGTG40N60B3 equivalent
g40n60b
g40n60b3
TA49052
LD26
RHRP3060
transistor* igbt 70A 300 V
DSA003678
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HGTG40N60B3 equivalent
Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6
Text: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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Original
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PDF
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HGTG40N60B3
HGTG40N60B3
150oC.
100ns
150oC
HGTG40N60B3 equivalent
G40N60
g40n60b3
transistor C110
LD26
RHRP3060
TA49052
g40n6
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G40N60
Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b HGTG40N60B3 LD26 RHRP3060
Text: HGTG40N60B3 Data Sheet August 2003 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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Original
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PDF
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HGTG40N60B3
HGTG40N60B3
150oC.
100ns
150oC
G40N60
g40n60b3
HGTG40N60B3 equivalent
TA49052
g40n60b
LD26
RHRP3060
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G40N60
Abstract: g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b
Text: HGTG40N60B3 Semiconductor 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
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Original
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PDF
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HGTG40N60B3
HGTG40N60B3
150oC.
100ns
150oC
G40N60
g40n60b3 igbt
G40N60B3
HGTG40N60B3 equivalent
LD26
RHRP3060
TA49052
g40n60b
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G40N60
Abstract: g40n60b3 g40n60b g40n60b3 igbt TA49052 HGTG40N60B3 LD26 RHRP3060 45UH
Text: HGTG40N60B3 S E M I C O N D U C T O R PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package o • 70A, 600V at TC = +25 C JEDEC STYLE TO-247 • Square Switching SOA Capability E • Typical Fall Time - 160ns at +150oC C G • Short Circuit Rating
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HGTG40N60B3
O-247
160ns
150oC
HGTG40N60B3
150oC.
G40N60
g40n60b3
g40n60b
g40n60b3 igbt
TA49052
LD26
RHRP3060
45UH
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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g40n60b3d
Abstract: G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 HGT1Y40N60B3D RHRP3060 TA49063
Text: HGT1Y40N60B3D Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGT1Y40N60B3D
HGT1Y40N60B3D
150oC.
TA49052.
TA49063.
g40n60b3d
G40N60
g40n60b3
hgtg40n60b3
g40n60b
TA49052
tr c110
RHRP3060
TA49063
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G40N60B3
Abstract: G40N60
Text: HGTG40N60B3 S E M I C O N D U C T O R 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
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Original
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PDF
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HGTG40N60B3
HGTG40N60B3
150oC.
G40N60B3
1-800-4-HARRIS
G40N60B3
G40N60
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G40N60
Abstract: g40n60b3 igbt G40N60b3 HGTG40N60B3 LD26 RHRP3060 TA49052
Text: HGTG40N60B3 S E M I C O N D U C T O R 70A, 600V, UFS Series N-Channel IGBT April 1997 Features Description • 70A, 600V, TC = 25oC The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
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Original
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PDF
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HGTG40N60B3
HGTG40N60B3
150oC.
100ns
150oC
1-800-4-HARRIS
G40N60
g40n60b3 igbt
G40N60b3
LD26
RHRP3060
TA49052
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G40N60
Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
Text: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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Original
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PDF
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HGTG40N60B3
HGTG40N60B3
150oC.
100ns
150oC
G40N60
g40n60b3
HGTG40N60B3 equivalent
TA49052
LD26
RHRP3060
g40n60b
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G40N60
Abstract: G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b3 igbt
Text: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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Original
|
PDF
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HGTG40N60B3
HGTG40N60B3
150oC.
100ns
150oC
G40N60
G40N60B3
HGTG40N60B3 equivalent
LD26
RHRP3060
TA49052
g40n60b3 igbt
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G40N60
Abstract: g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052
Text: CB H G T G 40N 60B 3 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, T c = 2 5 °C The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
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OCR Scan
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PDF
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HGTG40N60B3
G40N60B3
1-800-4-HARRIS
G40N60
g40n60b3
g40n60b
g40n60b3 igbt
40N60B3
TA49052
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40n60b3
Abstract: TA49052 g40n60b transistor TE 901 equivalent se 823 HGTG40N60B3 equivalent
Text: U U HGTG40N60B3 S E M I C O N D U C T O R PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package • 70A, 600V at T c = +25°C JEDEC STYLE TO-247 • Square Switching SOA Capability • Typical Fall Time - 160ns at +150°C • Short Circuit Rating
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OCR Scan
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PDF
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HGTG40N60B3
O-247
160ns
HGTG40N60B3
40n60b3
TA49052
g40n60b
transistor TE 901 equivalent
se 823
HGTG40N60B3 equivalent
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