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Catalog Datasheet	MFG & Type	PDF	Document Tags
40N60A4 Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347 Text: HGTG40N60A4 TM Data Sheet April 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance	Original	PDF	HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 HGT1Y40N60A4D LD26 TA49347
40N60A4 Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347 Text: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a	Original	PDF	HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 HGT1Y40N60A4D LD26 TA49347
40N60A4D Abstract: TA49347 40N60A4 MOSFET 40A 600V HGT5A40N60A4D LD26 Text: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input	Original	PDF	HGT5A40N60A4D HGT5A40N60A4D 150oC. TA49347. 100kHz 200kHz 40N60A4D TA49347 40N60A4 MOSFET 40A 600V LD26
40N60A4 Abstract: 40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347 40N60A TO-247ST Text: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input	Original	PDF	HGT5A40N60A4D HGT5A40N60A4D 150oC. TA49347. 100kHz 200kHz 40N60A4 40N60A4D MOSFET 40A 600V LD26 TA49347 40N60A TO-247ST
HGTG40N60A4 Abstract: IGBTs 40N60A4 HGT1Y40N60A4D LD26 TA49347 Text: HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance	Original	PDF	HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz IGBTs 40N60A4 HGT1Y40N60A4D LD26 TA49347
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
40N60A4D Abstract: 40N60A4 HGTG*N60A4D 40N60A HGT1Y40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347 Text: HGT5A40N60A4D / HGT1Y40N60A4D Data Sheet May 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D and HGT1Y40N60A4D are MOS gated high voltage switching devices combining the best features of a MOSFET and a bipolar transistor. These	Original	PDF	HGT5A40N60A4D HGT1Y40N60A4D HGT1Y40N60A4D 150oC. TA49347. 100kHz 200kHz 40N60A4D 40N60A4 HGTG*N60A4D 40N60A MOSFET 40A 600V LD26 TA49347
40N60A4 Abstract: HGTG40N60A4 MOSFET 40A 600V TA49347 HGT1Y40N60A4D LD26 Text: HGTG40N60A4 Data Sheet April 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance	Original	PDF	HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 MOSFET 40A 600V TA49347 HGT1Y40N60A4D LD26
40N60A4D Abstract: DIODE 809 200A 40N60A4 Capacitor 400v 80A HGT5A40N60A4D TA49347 Text: HGT5A40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input	Original	PDF	HGT5A40N60A4D HGT5A40N60A4D 150oC. TA49347. 40N60A4D DIODE 809 200A 40N60A4 Capacitor 400v 80A TA49347